2013 Fiscal Year Final Research Report
Preparation of new coherent tunnel barriers for permalloy by modifying oxidation procedures
| Project/Area Number |
24656024
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
MITANI Seiji 独立行政法人物質・材料研究機構, 磁性材料ユニット, グループリーダー (20250813)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
SUKEGAWA Hiroaki 物質・材料研究機構, 磁性材料ユニット, 主任研究員 (30462518)
KASAI Shinya 物質・材料研究機構, 磁性材料ユニット, 主任研究員 (20378855)
|
|---|
| Project Period (FY) |
2012-04-01 – 2014-03-31
|
| Keywords | スピントロニクス / 強磁性トンネル接合 / コヒーレントトンネル / パーマロイ / 磁気メモリ素子 |
|---|
| Research Abstract |
Ferromagnetic tunnel junctions (MTJs) are the major device in spintronics, which are used for read heads of hard disk drives (HDDs) and magnetic random access memories (MRAMs). The coherent tunnel effect is of particular importance in enhancing the performance of MTJs, but the electrode and barrier materials usable for the coherent tunneling have been limited. In this study, for the first time we have successfully developed crystalline MgAlO and AlO barriers that are grown epitaxially on NiFe(111). It is expected that the new barriers brings about the coherent tunnel effect and resulting high magnetoresistance for MTJ structures with the unconventional crystallographic orientation.
|
