Control of carrier doping using atomic layer silicide semiconductors

2014 Fiscal Year Final Research Report

• Project/Area Number: 24656220
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: UCHIDA Noriyuki 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 (60400636)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 原子層シリサイド半導体 / キャリアドーピング / エピタキシャル成長

Outline of Final Research Achievements

In this project, we fabricated W encapsulating Si cage cluster (WSin) films on Si surfaces to develop new element technologies for upcoming Si nanoelectronics. The WSin films were 1nm thick very thin semiconductor film. The electron density and the mobility of the WSin film were estimated to be 6.5×1019 cm-3 and of 8.8 cm2/Vs from measurements of two dimensional carrier transport properties. To use WSin films widely in the device fabrication process, we developed a thermal chemical vapor deposition method of WSin films.

Free Research Field

ナノエレクトロニクス材料