2013 Fiscal Year Final Research Report
New etching phenomena occurring at catalytic metal/Si interface in gas phase
| Project/Area Number |
24656232
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka University |
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Principal Investigator |
MATSUMURA Michio 大阪大学, 太陽エネルギー化学研究センター, 教授 (20107080)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | 気相エッチング / 微細加工 / シリコン / 触媒 |
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| Research Abstract |
We discovered new gas-phase etching processes of Si using metallic catalyst and proposed the mechanisms based on the experimental results. In each experiment, etching was carried out with a Si substrate, on which a metal film was loaded, in air containing hydrofluoric acid gas at 100 C. When a Au layer was used as the catalyst, Si atoms, which passed through the Au layer, were oxidatively etched on the Au surface. When a Pd layer was used as the catalyst, etching proceeded via a Pd-Si alloy. Since the alloy was produced isotropically, the pore formed in Si was much larger than the size of the Pd layer, especially when the size was small. In addition, we found that arc-shaped pores can be formed by combining two different metal catalysts.
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Research Products
(6 results)
