2013 Fiscal Year Final Research Report
Formation of 3-dimensional (3D) Si quantum dot arrays using block copolymer self-assembly and its application to 3D quantum dot solar cell
| Project/Area Number |
24656435
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | Gunma University |
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Principal Investigator |
HOSAKA Sumio 群馬大学, 理工学研究院, 教授 (10334129)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | 自己組織化 / 量子ドット / 太陽電池 |
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| Research Abstract |
We studied a formation of multi-tunnel junction PIN type solar cell substrate and masking and etching of very fine cylinder structure of the substrate for three-dimensional (3D) quantum dot solar cell. In the former, we proposed structure of 3D quantum dot solar cell and process for its fabrication using LP-CVD (Low pressure chemical vapor deposition), thermal oxidation and impurity diffusion. After the fabrications, we evaluated the solar cell properties and obtained adaptive structure with 1nm-thickness in LP-CVD SiO2 layer for tunneling current. Furthermore, we obtained the substrate with 3-PIN-multi-layers structure for 3D solar cell. In the latter, we developed very fine dot pattern formation using self-assembly with PS-PDMS block copolymer, multi-resist method with thin Si layer and carbon layer to transfer it to carbon dot pattern for etching mask, and reactive-ion-etching (RIE) of the Si substrate as very fine cylinders with multi-tunnel junction PIN type solar cell.
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