Development of SiC-based plasmonic transistors with Schottky source/drain

2014 Fiscal Year Final Research Report

• Project/Area Number: 24686008
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Osaka University
• Principal Investigator: HOSOI Takuji 大阪大学, 工学(系)研究科(研究院), 助教 (90452466)
• Co-Investigator(Renkei-kenkyūsha): WATANABE Heiji 大阪大学, 工学研究科, 教授 (90379115) ; SHIMURA Takayoshi 大阪大学, 工学研究科, 准教授 (90252600)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: SiC / パワーデバイス / ゲート絶縁膜 / ショットキー接合

Outline of Final Research Achievements

This work aims a development of SiC-based transistors with novel operating principle utilizing transparency of SiC against visible and infrared light. For this purpose, control of Schottky barrier height (SBH) at metal/SiC interface and improvement of MOS interface properties are the technological challenges. Device simulation revealed that SBH smaller than 0.3 eV is required for normal operation of SiC MOSFET with metal source/drain. To obtain such small SBH, we examined Ba electrode which has very low vacuum work function (2-3 eV) compared with electron affinity of SiC (3.6 eV), but instability of Ba layer due to its high reactivity against atmosphere was a serious roadblock. We found that bilayer electrode consisting of thin Ba layer with thick Al capping demonstrated a stable effective work function of 3.1 eV.

Free Research Field

半導体工学