Basic study for development of ultra-low loss diamond power devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 24686074
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Kanazawa University
• Principal Investigator: TOKUDA Norio 金沢大学, 電子情報学系, 准教授 (80462860)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: カーボン材料 / ダイヤモンド / パワーデバイス / 半導体

Outline of Final Research Achievements

Diamond is a semiconductor material for the next-generation power devices. The purpose of this study was to create the novel device performances for the realization of ultra-energy saving by elevating its material and process techniques. In this study, we succeeded in the development of the growth techniques of high-quality p-type diamond films, the realization of delta-doped diamond with ultralow resistivity, and the fabrication of diamond MOS structures with high-quality Al2O3/diamond interfaces.

Free Research Field

半導体物理、表面科学、結晶成長