2013 Fiscal Year Final Research Report
Development of multi-state anti-fuse utilizing location of gate-oxide breakdown of MOSFET
| Project/Area Number |
24760269
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
HIROSHI Fuketa 東京大学, 生産技術研究所, 助教 (30587423)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | ゲート酸化膜破壊 / 電子ヒューズ / OTP ROM / ROM |
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| Research Abstract |
Recently, a programmable read-only memory (OTP ROM) based on an anti-fuse using the gate-oxide of MOS transistor has been widely used for analog trimming, and a lager-capacity OTP ROM has been required. Therefore, this project developed a multi-state anti-fuse utilizing the location of gate-oxide breakdown of MOS transistor, which enables a lager-capacity OTP ROM. In order to realize such multi-state anti-fuse, the location of gate-oxide breakdown must be controllable. However, the method to control the location had not been revealed. In this project, the method to control the location was proposed and verified with silicon measurements for the first time. Then, OTP ROM with the developed multi-state anti-fuse was designed and fabricated in 0.18um CMOS process, and we confirmed that the area per bit of OTP ROM can be reduced compared with the conventional work by using the multi-state anti-fuse.
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