Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

2015 Fiscal Year Final Research Report

• Project/Area Number: 25000011
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Engineering
• Research Institution: Nagoya University
• Principal Investigator: AMANO Hiroshi 名古屋大学, 未来材料・システム研究所, 教授 (60202694)
• Co-Investigator(Kenkyū-buntansha): Honda Yoshio 名古屋大学, 未来材料・システム研究所, 准教授 (60362274) ; DEKI Manato 名古屋大学, 未来材料・システム研究所, 助教 (80757386) ; OHNO Yutaka 名古屋大学, 未来材料・システム研究所, 教授 (10324451) ; MIYAKE Hideto 三重大学, 地域イノベーション学研究科, 教授 (70209881) ; NARITSUKA Shigeya 名城大学, 理工学部, 教授 (80282680) ; TAKEUCHI Tetsuya 名城大学, 理工学部, 教授 (10583817) ; IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735) ; FUKUYAMA Hiroyuki 東北大学, 多元物質科学研究所, 教授 (40252259)
• Project Period (FY): 2013 – 2015
• Keywords: 電気・電子材料

Outline of Final Research Achievements

To improve internal quantum efficiency of AlGaN-based Deep UV (DUV) LED's, two step sublimation growth process of bulk AlN has been established. Ex situ annealing was found to be very effective to improve crystalline quality of very thin AlN on a sapphire substrate. Direct growth of transparent graphene on p-GaN was succeeded. Also control of carbon nanotube electrode was successfully conducted, thereby reducing the operation voltage. Polarization doping was found to be very effective to reduce operating voltage. As a result, high power DUV was commercialized and applied as a light source in a water purification system.

Free Research Field

電気電子工学