Research on AlN-based heterostructure growth and UV light-emitting devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 25246022
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: NTT Basic Research Laboratories
• Principal Investigator: Taniyasu Yoshitaka 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (20393738)
• Co-Investigator(Kenkyū-buntansha): 熊倉 一英 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 特別研究員 (00393736) ; 平間 一行 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 研究主任 (50434329) ; 山本 秀樹 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 (70393733)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 結晶成長 / 半導体物性 / 窒化物半導体 / 発光デバイス / 紫外

Outline of Final Research Achievements

Growth mechanism, doping property and optical property of AlN-based semiconductor and its heterostructures were studied. We developed these single-crystal growth technology, high-efficiency doping, and device fabrication. We achieved high-efficiency AlN-based LED and photo-pumped deep-UV lasing from AlGaN quantum wells. We also developed a growth method for single-crystal cubic BN, which is able to make new heterostructures with AlN and Diamond. These results will contribute to further developments of AlN-based materials and devices, and crystal growth technologies for creating new materials.

Free Research Field

結晶工学