Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties

2017 Fiscal Year Final Research Report

• Project/Area Number: 25246028
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Osaka University
• Principal Investigator: WATANABE HEIJI 大阪大学, 工学研究科, 教授 (90379115)
• Co-Investigator(Renkei-kenkyūsha): SHIMURA Takayoshi 大阪大学, 大学院工学研究科, 准教授 (90252600) ; HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
• Project Period (FY): 2013-04-01 – 2018-03-31
• Keywords: 界面物性 / 界面反応 / Ⅳ族混晶半導体 / ゲルマニウム / 光電子融合デバイス

Outline of Final Research Achievements

Dislocation-free local Ge- and GeSn-on-insulator structures were successfully fabricated by utilizing a novel liquid-phase crystallization technique. This method allows us to fabricated tensile-strained GOI and GeSnOI layers due to the large difference in thermal expansion coefficient between the semiconductors and substrate. In addition, high Sn-content exceeding the solubility limit was realized with the proposed method. Thin film transistors (TFTs) fabricated with the GOI and GeSnOI structures exhibited very high carrier mobility, indicating superior crystalline quality of thin Ge and GeSn layers and big advantage in electronic device applications. Moreover, enhanced direct bandgap emission and improved NIR photo-responsivity were demonstrated with GeSn-based photonic devices. The present technology opens a way for fully-integrated group-Ⅳ-based optoelectronic integration in the post-scaling era.

Free Research Field

薄膜工学