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2015 Fiscal Year Final Research Report

Fundamental study of high-performance, low-power transistor by hetero interface formation

Research Project

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Project/Area Number 25289082
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

NIWA Masaaki  東北大学, 国際集積エレクトロニクス研究開発センター, 教授 (90608936)

Co-Investigator(Kenkyū-buntansha) HASUNUMA Ryu  筑波大学, 数理物質科学研究科, 准教授 (90372341)
SHIRAISHI Kenji  名古屋大学, 工学研究科, 教授 (20334039)
SATO Soshi  東北大学, 国際集積エレクトロニクス研究開発センター, 助教 (80649749)
Co-Investigator(Renkei-kenkyūsha) YAMABE Kikuo  筑波大学, 数理物質科学研究科, 教授 (10272171)
Project Period (FY) 2013-04-01 – 2016-03-31
Keywords絶縁破壊機構 / 表面・界面物理解析 / 信頼性物理 / ゲート絶縁膜 / 結晶性 / ヘテロエピタキシャル成長 / 透過型電子顕微鏡
Outline of Final Research Achievements

In regard to the current serious energy issue, especially from the electric energy point of view, fundamental study of high-performance, low-power MOSFET using wide band gap semiconductor, i.e., 1) Electric breakdown of Al, Ploy Si/SiO2/SiC capacitors and 2) Crystallinity of GaN/BP/Si(001) heterostructure was performed.
In case of 1), characteristic carpet-bombing-like concaves were observed by the dielectric breakdown and its developmental mechanism was clarified by means of electrical and physical analyses. This phenomenon is not observed for the conventional Si-MOS capacitors. For 2), number of defects of the crystal BP on Si(001) was found to decreased with increasing its thickness. And it was confirmed experimentaly that high quality BP buffer layer with minimized defets is imperative to obtain a high quality GaN crystal on the BP buffer layer on Si(001).

Free Research Field

電子デバイス界面制御、評価

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Published: 2017-05-10  

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