2016 Fiscal Year Final Research Report
Study of InSb-CMOS on Si subustrate by using surface reconstruction controlled epitaxy
Project/Area Number |
25289099
|
Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | University of Toyama |
Principal Investigator |
Mori Masayuki 富山大学, 理工学研究部(工学), 准教授 (90303213)
|
Co-Investigator(Renkei-kenkyūsha) |
MAEZAWA KOICHI 富山大学, 大学院理工学研究部, 教授 (90301217)
|
Project Period (FY) |
2013-04-01 – 2017-03-31
|
Keywords | InSb / Si(111) / InGaSb / GaSb / MOSFET / ALD |
Outline of Final Research Achievements |
To improve the device performance of Al2O3/InSb/Si n-MOSFETs, we introduced the gate electrode with overlap structure, and considered the device process using laser exposure system. We also tried to optimize the growth conditions of GaSb and/or InGaSb on Si for p-MOSFETs to realize InSb-CMOS on Si. We also measured the electric properties such as I-V, C-V properties to understand the hetero interface of n-InSb/p-Si for realization of TFETs.
|
Free Research Field |
半導体薄膜工学
|