Study on high-speed doping mechanism of wet laser processing

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289105
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kyushu University
• Principal Investigator: ASANO Tanemasa 九州大学, システム情報科学研究科(研究院, 教授 (50126306)
• Co-Investigator(Renkei-kenkyūsha): IKENOUE Hiroshi 九州大学, 大学院システム情報科学研究院, 准教授 (70413862) ; IKEDA Akihiro 九州大学, 大学院システム情報科学研究院, 助教 (60315124)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 炭化シリコン / SiC / レーザープロセッシング / レーザードーピング / 液中レーザー / JBSダイオード / オーミック接触 / パワーデバイス

Outline of Final Research Achievements

A new method to dope impurity atoms to silicon carbide (SiC), which is the most promising wide-band gap semiconductor, has been developed. The method uses laser irradiation to SiC immersed in a liquid which contain impurity atoms. Phosphorus, nitrogen, aluminum were found to be doped by irradiating laser in phosphoric acid, liquid nitrogen, and aqueous solution of aluminum chloride, respectively. Doping of Al from laser produce molten Al on the surface of SiC has also been found to effective to obtain a highly doped, deep junction p-type layer.The method has been demonstrated to be able to apply to fabrication of pn junction diode and JBS diode. Formation of low resistance contacts to SiC has been also demonstrated.

Free Research Field

電子デバイス工学