Low strain and high aspect ratio Cu-TSVs

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289258
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Material processing/Microstructural control engineering
• Research Institution: Ibaraki University
• Principal Investigator: Onuki Jin 茨城大学, 理工学研究科, 特任教授 (70315612)
• Co-Investigator(Kenkyū-buntansha): Inami Takashi 茨城大学, 工学部, 准教授 (20091853) ; Kondo Kazuo 大阪府立大学, 大学院工学研究科, 教授 (50250478) ; Nagano Takatoshi 茨城大学, 工学部, 講師 (70343621) ; 篠嶋 妥 茨城大学, 工学部, 教授 (80187137)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: Cu-TSV / ３次元実装 / 低抗率 / Cuめっき / 不純物

Outline of Final Research Achievements

We manufactured a new TEG patterns, and evaluated the resistivity and nano-microstructures of Cu-TSVs. Following results were obtained.1)Resistivity of Cu-TSVs was found to be 4.13μΩ・cm. 2)Existence ration of small grains less than 50nm was also found by X-ray diffraction and EBSD analysis.3)Impurities consisting of Cl,O, and metal elements were found in nano-grain boundaries by STEM. The impurities prevented grain growth during annnealing.

Free Research Field

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