Development of a nanosized synapse device for brain computers

2015 Fiscal Year Final Research Report

• Project/Area Number: 25330279
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Soft computing
• Research Institution: Tohoku University
• Principal Investigator: Sato Shigeo 東北大学, 電気通信研究所, 教授 (10282013)
• Co-Investigator(Kenkyū-buntansha): NAKAJIMA KOJI 東北大学, 電気通信研究所, 教授 (60125622) ; ONOMI TAKESHI 東北大学, 電気通信研究所, 助教 (70312676) ; AKIMA HISANAO 東北大学, 電気通信研究所, 助教 (40707840)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 脳型計算機 / ニューロチップ / シナプスデバイス / フローティングゲートメモリ

Outline of Final Research Achievements

To develop a practical brain computer, we have studied a nanosized synapse device composed of a floating-gate memory and a vertical MOS transistor, which is necessary for huge integration, and its compatibility with neuron and learning circuits. As a result, we have developed poly Si thin film deposition process for floating gate electrodes and fabrication process of vertical MOS transistors, and optimized each process parameters. Furthermore, we estimated the performance of a nanosized synapse device and confirmed its effectiveness and problems in application to large scale neural networks.

Free Research Field

神経回路