Formation technology development of high quality Ge/Si heterostructures using hydrogen radical

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390065
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: University of Yamanashi
• Principal Investigator: NAKAGAWA Kiyokazu 山梨大学, 総合研究部, 教授 (40324181)
• Co-Investigator(Kenkyū-buntansha): YAMANAKA JUNJI 山梨大学, 大学院総合研究部, 准教授 (20293441) ; SATO TETSUYA 山梨大学, 大学院総合研究部, 准教授 (60252011)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: GeSiヘテロ構造 / ラジカル水素加熱 / GeチャネルFET

Outline of Final Research Achievements

300nm thick Ge layers were grown on Si(100) substrates at 300 °C using an MBE apparatus and single-crystal Ge/Si heterostructures were formed. Dislocations originated from the lattice mismatch between Ge and Si were observed by a transmission electron microscope. 100nm thick SiO2 films were deposited at 300 °C with by CVD method on the heterostructures, and 100nm thick W films, which act as a heat source during hydrogen radical irradiation, deposited on the top by a RF sputter apparatus. Transmission electron microscope observations have revealed that mixing of Ge and Si layers didn’t occur by 700 or 800°C for around 0.2 second heating using hydrogen radical heating. We have fabricated p-MOSFETs on the Ge/Si(100) heterostructures and confirmed the high device performance with the effective hole mobility of 380cm2/Vs.

Free Research Field

半導体素子工学