Fabrication of organic semiconductor memory and application to neural network circuit

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420310
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Muroran Institute of Technology
• Principal Investigator: FUKUDA Hisashi 室蘭工業大学, 工学(系)研究科(研究院), 教授 (10261380)
• Co-Investigator(Kenkyū-buntansha): TADA Yoshihiro 室蘭工業大学, 工学研究科, 助教 (30637202)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: ナノテクノロジー

Outline of Final Research Achievements

Organic semiconductors have the potential to low cost fabrication owing to lower temperature processing. Organic semiconductor thin-film device (OTFT) has a mobility corresponding to amorphous Si devices. Application to electric papers and display devices is strongly expected. In this study, we have fabricated OTFTs with pentacene as a channel layer and CYOP film as a charge trapping layer for the purpose of memory function. Data storing is performed by negative stress for the gate electrode. The threshold voltage shift of 1.4 V was observed. positive bias stress induced the recovery of threshold voltage. In future, n-type OTFT memory will be fabricated to obtain complementary device operation.

Free Research Field

半導体工学