Development of high performance strechable field effect transistor devices using high-purity semiconducting single wall carbon nanotubes

2014 Fiscal Year Final Research Report

• Project/Area Number: 25600046
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials engineering
• Research Institution: Tokyo Metropolitan University
• Principal Investigator: YANAGI Kazuhiro 首都大学東京, 理工学研究科, 准教授 (30415757)
• Co-Investigator(Renkei-kenkyūsha): TAKENOBU Taishi 早稲田大学, 先進理工学部, 教授 (70343035)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 単層カーボンナノチューブ / 半導体型 / 伸縮性デバイス / 電界効果デバイス / 電気化学 / イオン液体・ゲル

Outline of Final Research Achievements

In this study, we have produced strechable field effect transistor devices using high-purity semiconducting single wall carbon nanotubes (s-SWCNT) and ionic gels through electryte gating approaches. We investigated the development of transfer techniques of s-SWCNT thin films on PDMS substrates, and evaluated the strechablitiy of channels and ionic gels. As a result, we succeeded to produce strechable electric devices in which both on/off ratio and mobility did not degrade even when the devices were streched to 19 %.

Free Research Field

物性物理学