Deposition of Cu nanoparticles produced by plasmas in liquid to fine stracture

2014 Fiscal Year Final Research Report

• Project/Area Number: 25600126
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Plasma electronics
• Research Institution: Kyushu University
• Principal Investigator: KOGA Kazunori 九州大学, システム情報科学研究科(研究院, 准教授 (90315127)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: ナノ粒子 / 異方性製膜 / 液中プラズマ / 微細構造 / 埋め込み

Outline of Final Research Achievements

High speed deposition of metal in fine structure is an important issue for Cu interconnects in semiconductor fabrication. In this study we have studied process kinetics of plasma anisotropic CVD, which is a key process to establish Cu deposition in fine structure, and produced metal nanoparticles using plasmas in liquid. For plasma anisotropic CVD, we have found process pressure, distance between a discharge electrode and substrates, and energy of ions impinging to substrates to deposit high density films at high deposition rate. For nanoparticle fabrication using plasmas in liquid, we have succeeded in generating In, Cu, Au, and Pt nanoparticles using 7.6 kHz pulsed discharges of 15.2 kV in discharge voltage. Production yield was quite high of 42 mg/min for In nanoparticles.

Free Research Field

プラズマ理工学