Challenge to a product of dark material made by a silicon carbide

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630119
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Yamagata University
• Principal Investigator: NARITA Yuzuru 山形大学, 理工学研究科, 助教 (30396543)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 炭化ケイ素 / 反射率 / 透過率 / 赤外光 / 紫外-可視光 / 黒体

Outline of Final Research Achievements

Because a refractive index of cubic silicon carbide (3C-SiC) is relatively high and a reflectance of SiC is about 20%, SiC cannot become the dark material which is near to a perfectly black body. In this study, we challenged a product of dark material made by the SiC films. The polycrystalline SiC film that the surface was black was deposited by chemical vapor deposition using organosilane gas. By optimizing the conditions of SiC growth, we succeeded in the development of polycrystalline SiC film with a low-reflectance of about 6% in an ultraviolet, visible, and near-infrared light range.

Free Research Field

表面科学、結晶成長、半導体工学