Dopant-atom-controlled tunnel diodes using Si nano-pn junctions

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630144
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Shizuoka University
• Principal Investigator: TABE Michiharu 静岡大学, 電子工学研究所, 教授 (80262799)
• Co-Investigator(Kenkyū-buntansha): MIZUTA Hiroshi 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 電子デバイス・機器 / シリコンナノpn接合 / ドーパント原子 / トンネルダイオード / 高濃度ドーピング

Outline of Final Research Achievements

The purpose of this research was to realize dopant-atom-based tunneling diodes using deep level donor-acceptor resonance as a new functional pn diode. In 2014 FY, we found that diffusion current of nano-pn-diodes showed random telegraph signal (RTS), which is ascribed to dopant charging and discharging phenomena (APL(2014). In 2015 FY, we found sharp current peaks due to resonance via dopant atoms. This finding successfully satisfies the goal of this research plan (to be presented in Si Nanoelectronics Workshop 2015).

Free Research Field

工学