Three dimensional manipulation of spin current in silicon

2015 Fiscal Year Final Research Report

• Project/Area Number: 25709027
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Kyoto University (2014-2015); Osaka University (2013)
• Principal Investigator: Ando Yuichiro 京都大学, 工学(系)研究科(研究院), 助教 (50618361)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: スピン流 / シリコン / スピン操作

Outline of Final Research Achievements

Silicon (Si) spintronics is becoming a pivotal field in semiconductor spintronics. Si is a light element and its crystal structure possesses a spatial inversion symmetry, which enable good spin coherence. Furthermore, Si spintronics devices have good compatibility with existing Si-LSI(large scale integration ) technologies. In this study, we investigated manipulation of a spin current in Si at room temperature. By applying perpendicular magnetic field spin precession more than 4 π was realized. Furthermore, long spin transport more than 21 micro meter and gate modulation of the spin transport signals were achieved at room temperature.

Free Research Field

半導体スピントロニクス