Development of an organic monolayer Mott transistor

2014 Fiscal Year Final Research Report

• Project/Area Number: 25810143
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Device related chemistry
• Research Institution: Institute for Molecular Science
• Principal Investigator: SUDA Masayuki 分子科学研究所, 協奏分子システム研究センター, 助教 (80585159)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 電界効果トランジスタ / 自己組織化単分子膜 / モット絶縁体 / 電荷移動錯体

Outline of Final Research Achievements

In this research, an organic monolayer Mott field-effect transistor has been designed by fabricating the mixed self-assembled monolayer of TCNQ (Tetracyanoquinodimethane) and BEDT-TTF(Bis(ethylenedithio)tetrathiafulvalene) derivatives. The device obtained has a large single-domain monolayer in the range of 200 μm and showed n-type field effects. The observed ON/OFF ratio and field-effect mobility was higher than that of the FETs with bulk crystals, that demonstrated the superiority of the monolayer FET.

Free Research Field

デバイス科学