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2014 Fiscal Year Final Research Report

Control of crystalline defect generation processes for realization of high-hole-mobility strained Si thin films and its application to electronic devices

Research Project

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Project/Area Number 25870280
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Crystal engineering
Inorganic materials/Physical properties
Research InstitutionUniversity of Yamanashi

Principal Investigator

ARIMOTO Keisuke  山梨大学, 総合研究部, 准教授 (30345699)

Project Period (FY) 2013-04-01 – 2015-03-31
Keywordsヘテロ構造 / 結晶構造・組織制御
Outline of Final Research Achievements

Strained Si/SiGe heterostructures were grown on Si(110) substrates using solid source molecular beam epitaxy. Relationship between crystalline/surface morphologies and hole mobility was investigated. One order of magnitude lower surface roughness than on those grown by gas source molecular beam epitaxy was revealed. As a result, hole mobility higher than 600 cm2/Vs was achieved in the strained Si layer.

Free Research Field

工学

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Published: 2016-06-03  

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