2014 Fiscal Year Final Research Report
Control of crystalline defect generation processes for realization of high-hole-mobility strained Si thin films and its application to electronic devices
| Project/Area Number |
25870280
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
Inorganic materials/Physical properties
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| Research Institution | University of Yamanashi |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Keywords | ヘテロ構造 / 結晶構造・組織制御 |
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| Outline of Final Research Achievements |
Strained Si/SiGe heterostructures were grown on Si(110) substrates using solid source molecular beam epitaxy. Relationship between crystalline/surface morphologies and hole mobility was investigated. One order of magnitude lower surface roughness than on those grown by gas source molecular beam epitaxy was revealed. As a result, hole mobility higher than 600 cm2/Vs was achieved in the strained Si layer.
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| Free Research Field |
工学
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