2015 Fiscal Year Final Research Report
research of tin-semiconductor detector
| Project/Area Number |
25887027
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Particle/Nuclear/Cosmic ray/Astro physics
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| Research Institution | Gifu University |
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Principal Investigator |
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| Project Period (FY) |
2013-08-30 – 2016-03-31
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| Keywords | スズ半導体 / 同素変態 |
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| Outline of Final Research Achievements |
Tin is stable as a metal at normal temperature which is called by beta-tin. beta-tin transforms to alpha-tin at low temperature. alpha-tin is semi-conductor which has smaller band-gap than Germanium or Silicon. In this study, experiments of allotropic transformation were carried out as a basic research for tin detector. The process of allotropic transformation was observed, and a transformation rate was surveyed under some different conditions about temperature, pressure, and a seed crystal. We found semi-conductor, InSb, with a lattice constant close to alpha-tin was suitable as a seed crystal. Experiments by changing temperature from -40 ℃ to -5 ℃ by 5 degree shows a transformation process becomes large at －40 ℃. In addition, the process of tin disease is suppressed by applying high pressure.
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| Free Research Field |
ハドロン物理学実験
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