Invention of a metal-source/drain-type Germanium spin-MOSFET

2014 Fiscal Year Final Research Report

• Project/Area Number: 25889041
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: KASAHARA Kenji 九州大学, システム情報科学研究科(研究院, 特任助教 (00706864)
• Project Period (FY): 2013-08-30 – 2015-03-31
• Keywords: スピンMOSFET / ゲルマニウム

Outline of Final Research Achievements

Using the lateral spin-valve devices with the highly-ordered L21- Co2FeSi/n+-Ge Schottky tunnel contacts, we have realized the spin generation efficiency of ~0.12 which is about two orders magnitude larger than that for the previously reported devices with the Fe3Si/MgO tunnel barrier contacts, and succeeded that the spin-valve signals can be obtained at 275 K. We also have demonstrated that by using a (NH4)2S treatment on the Ge surface, a reduction in Fermi-level pinning can reproducibly be achieved at atomically matched bcc-alloy/Ge(111) interfaces. In addition, we have fabricated the Ge thin film transistors (TFTs) below 300 oC by using a modulated gold-induced-crystallization.

Free Research Field

スピントロニクス