2014 Fiscal Year Final Research Report
Invention of a metal-source/drain-type Germanium spin-MOSFET
Project/Area Number |
25889041
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
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Research Institution | Kyushu University |
Principal Investigator |
KASAHARA Kenji 九州大学, システム情報科学研究科(研究院, 特任助教 (00706864)
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Project Period (FY) |
2013-08-30 – 2015-03-31
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Keywords | スピンMOSFET / ゲルマニウム |
Outline of Final Research Achievements |
Using the lateral spin-valve devices with the highly-ordered L21- Co2FeSi/n+-Ge Schottky tunnel contacts, we have realized the spin generation efficiency of ~0.12 which is about two orders magnitude larger than that for the previously reported devices with the Fe3Si/MgO tunnel barrier contacts, and succeeded that the spin-valve signals can be obtained at 275 K. We also have demonstrated that by using a (NH4)2S treatment on the Ge surface, a reduction in Fermi-level pinning can reproducibly be achieved at atomically matched bcc-alloy/Ge(111) interfaces. In addition, we have fabricated the Ge thin film transistors (TFTs) below 300 oC by using a modulated gold-induced-crystallization.
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Free Research Field |
スピントロニクス
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