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2018 Fiscal Year Annual Research Report

Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics

Research Project

Project/Area Number 26220605
Research InstitutionNagoya University

Principal Investigator

財満 鎭明  名古屋大学, 未来社会創造機構, 教授 (70158947)

Co-Investigator(Kenkyū-buntansha) 竹中 充  東京大学, 大学院工学系研究科(工学部), 准教授 (20451792)
齋藤 晃  名古屋大学, 未来材料・システム研究所, 教授 (50292280)
Project Period (FY) 2014-05-30 – 2019-03-31
Keywords半導体物性 / 結晶工学 / 表面・界面物性 / ゲルマニウム錫 / エネルギーバンド / 結晶成長 / 集積回路 / Ⅳ族半導体
Outline of Annual Research Achievements

本研究では、光電融合多機能デバイスや次世代トランジスタ構築に向けたSn系IV族混晶薄膜の結晶成長、光電子物性制御技術に関する研究開発を進めた。本年度得られた主な成果を挙げる。
(1)SiGeSn/GeSn/SiGeSn二重ヘテロ構造のフォトルミネッセンス特性を詳細解析し、バンド構造、歪緩和や結晶物性が発光効率に及ぼす影響を詳細に解明した。(2)低温in-situ Sbドーピングによって形成した高濃度n型Ge(あるいはGeSn)エピタキシャル層上にNiGe(NiGeSn)による金属/Ge(GeSn)接合を作製し、1E-9Ω/cm2の超低コンタクト抵抗率を実証した。(3)絶縁膜上の多結晶n型およびp型GeSnの熱電特性を解明し、n型GeSnの室温特性において9.2μW/cmK2の優れたパワーファクタを実証した。さらにGeSnを用いた熱電変換素子を試作し、その熱電変換特性を明らかにした。(4)tetrakis-dimethylamino-tin(TDMASn)新規原料を用いたGeSnの有機原料化学気相成長法を実施し、従来原料に比べて、Ge原料との高い反応性とSn成長速度の増加を見出し、260℃の低温成長におけるSn組成5%のGeSnエピタキシャル層形成を実証した。また、Sn組成向上に向けた原料探索指針を構築した。(5)貼り合わせGeOI基板の高品質化を進めると共に、GeOI基板上の各種導波路デバイスの実証を進め、リング共振器、熱光学位相シフタ、受光器等の動作実証に成功した。また、MOS構造やグラフェンを組み合わせた新しい光変調器を提唱した。(6)電子回折法を用いたナノ領域の歪み分布解析法の開発を行い、擬似FinFET構造およびナノワイヤ中の歪み分布の可視化、ヘテロ界面、積層欠陥および転位近傍の3次元歪み場の観察に成功した。また電子顕微鏡試料の薄片化の影響を抑えるための指針を与えた。

Research Progress Status

平成30年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

平成30年度が最終年度であるため、記入しない。

  • Research Products

    (71 results)

All 2019 2018 Other

All Journal Article (21 results) (of which Int'l Joint Research: 5 results,  Peer Reviewed: 21 results,  Open Access: 5 results) Presentation (49 results) (of which Int'l Joint Research: 23 results,  Invited: 10 results) Remarks (1 results)

  • [Journal Article] Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination2019

    • Author(s)
      M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Pages: SAAD02

    • DOI

      10.7567/1347-4065/aaeb36

    • Peer Reviewed
  • [Journal Article] Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition2019

    • Author(s)
      Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Pages: SAAD07

    • DOI

      10.7567/1347-4065/aaec1a

    • Peer Reviewed
  • [Journal Article] Tunable germanium-on-insulator band-stop optical filter using thermo-optic effect2019

    • Author(s)
      C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka
    • Journal Title

      IEEE Photonics Journal

      Volume: 印刷中 Pages: 印刷中

    • DOI

      10.1109/JPHOT.2019.2904050

    • Peer Reviewed / Open Access
  • [Journal Article] High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform2019

    • Author(s)
      T. Fujigaki, S. Takagi, and M. Takenaka
    • Journal Title

      Optics Express

      Volume: 27 Pages: 6451-6458

    • DOI

      10.1364/OE.27.006451

    • Peer Reviewed / Open Access
  • [Journal Article] Numerical analysis of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelength2019

    • Author(s)
      Y. Taguchi, S. Takagi, and, M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Pages: SBBE03

    • DOI

      10.7567/1347-4065/aafb52

    • Peer Reviewed
  • [Journal Article] Direct Observation of a Li-ionic Space-Charge Layer Formed at an Electrode/Solid-Electrolyte Interface2019

    • Author(s)
      Y. Nomura, K.Yamamoto, T. Hirayama, S. Ouchi, E. Igaki, and K. Saitoh
    • Journal Title

      Angewandte Chemie

      Volume: 58 Pages: 5292-5296

    • DOI

      10.1002/anie.201814669

    • Peer Reviewed
  • [Journal Article] Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process2019

    • Author(s)
      K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
    • Journal Title

      Appl. Phys. Express

      Volume: 12 Pages: 051016

    • DOI

      10.7567/1882-0786/ab1969

    • Peer Reviewed / Open Access
  • [Journal Article] Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge2018

    • Author(s)
      A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Pages: 060304

    • DOI

      10.7567/JJAP.57.060304

    • Peer Reviewed
  • [Journal Article] Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties2018

    • Author(s)
      O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Pages: 07MA05

    • DOI

      10.7567/JJAP.57.07MA05

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors2018

    • Author(s)
      J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Pages: 121303

    • DOI

      10.7567/JJAP.57.121303

    • Peer Reviewed
  • [Journal Article] A New Application of Ge1-xSnx: Thermoelectric Materials2018

    • Author(s)
      M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
    • Journal Title

      ECS Trans. 2018

      Volume: 86 Pages: 321-328

    • DOI

      10.1149/08607.0321ecst

    • Peer Reviewed
  • [Journal Article] Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure2018

    • Author(s)
      M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
    • Journal Title

      Semicond. Sci. Tech.

      Volume: 33 Pages: 124018

    • DOI

      10.1088/1361-6641/aaebb5

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1-xSnx structure2018

    • Author(s)
      J. Jeon, A. Suzuki, O. Nakatsuka, and S. Zaima
    • Journal Title

      Semicond. Sci. Tech.

      Volume: 33 Pages: 124001

    • DOI

      10.1088/1361-6641/aae624

    • Peer Reviewed
  • [Journal Article] Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si2018

    • Author(s)
      S. Gupta, Y. Shimura, O. Richard, B. Douhard, E. Simoen, H. Bender, O. Nakatsuka, S. Zaima, R. Loo, and M. Heyns
    • Journal Title

      Appl. Phys. Lett.

      Volume: 113 Pages: 192103

    • DOI

      10.1063/1.5048683

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate2018

    • Author(s)
      J. Kang, S. Takagi, and M. Takenaka
    • Journal Title

      Optics Express

      Volume: 26 Pages: 30546-30555

    • DOI

      10.1364/OE.26.030546

    • Peer Reviewed / Open Access
  • [Journal Article] High-Q germanium optical nanocavity2018

    • Author(s)
      T. H. Xiao, Z. Zhao, W. Zhou, M. Takenaka, H. K. Tsang, Z. Cheng, and K. Goda
    • Journal Title

      Photonics Res.

      Volume: 6 Pages: 925-928

    • DOI

      10.1364/PRJ.6.000925

    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Mid-infrared high-Q germanium microring resonator2018

    • Author(s)
      T. H. Xiao, Z. Zhao, W. Zhou, C. Y. Chang, S. Y. Set, M. Takenaka, H. K. Tsang, Z. Cheng, and K. Goda
    • Journal Title

      Optics Letters

      Volume: 43 Pages: 2885-2888

    • DOI

      10.1364/OL.43.002885

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics2018

    • Author(s)
      J. Kang, S. Takagi, and M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Pages: 042202

    • DOI

      10.7567/JJAP.57.042202

    • Peer Reviewed
  • [Journal Article] Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength2018

    • Author(s)
      Y. Yamaguchi, S. Takagi, and M. Takenaka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Pages: 04FH06

    • DOI

      10.7567/JJAP.57. 04FH06

    • Peer Reviewed
  • [Journal Article] Electric shielding films for biased TEM samples and their application to in situ electron holography2018

    • Author(s)
      Y. Nomura, K. Yamamoto, T. Hirayama, and K. Saitoh
    • Journal Title

      Microscopy

      Volume: 67 Pages: 178-186

    • DOI

      10.1093/jmicro/dfy018

    • Peer Reviewed
  • [Journal Article] Quantitative operando visualization of electrochemical reactions and Li ions in All-Solid-State batteries by STEM-EELS with hyperspectral image analyses2018

    • Author(s)
      Y. Nomura, K. Yamamoto, T. Hirayama, M. Ohkawa, E. Igaki, N. Hojo, and K. Saitoh
    • Journal Title

      Nano Lett.

      Volume: 18 Pages: 5892-5898

    • DOI

      10.1021/acs.nanolett.8b02587

    • Peer Reviewed
  • [Presentation] 高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価2019

    • Author(s)
      福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明
    • Organizer
      応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第24回)
  • [Presentation] エピタキシャルHfGe2/Ge(001)界面の形成によるショットキー障壁高さ制御2019

    • Author(s)
      千賀一輝, 中塚理, 坂下満男, 柴山茂久, 財満鎭明
    • Organizer
      応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第24回)
  • [Presentation] GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価2019

    • Author(s)
      丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
    • Organizer
      応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」(第24回)
  • [Presentation] Raman分光法を用いたイオン注入Ge基板表面の結晶損傷評価2019

    • Author(s)
      祖父江秀隆, 福田雅大, 柴山茂久, 中塚理, 財満鎭明
    • Organizer
      第66回応用物理学会春季学術講演会
  • [Presentation] HfO2-ZrO2系薄膜における反強誘電性の発現過程について2019

    • Author(s)
      柴山茂久, 坂下満男, 中塚理, 財満鎭明
    • Organizer
      第66回応用物理学会春季学術講演会
  • [Presentation] Formation of Strain-relaxed Ge1-x-ySixSny Epitaxial Layer using Ionimplanted Ge Substrate2019

    • Author(s)
      H. Sofue, M. Fukuda, S. Shibayama, O. Nakatsuka, and S. Zaima
    • Organizer
      11th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials/12th International Conference on Plasma-Nano Technology and Science (ISPlasma2019/IC-PLANTS2019)
    • Int'l Joint Research
  • [Presentation] 辞書学習による原子分解能電子顕微鏡像のノイズ除去および原子位置決定精度の評価2019

    • Author(s)
      服部颯介, 齋藤晃, 野村優貴, 片山尚幸, 小島慶太, 澤博
    • Organizer
      日本物理学会第74回年次大会(2019年春季)
  • [Presentation] 収差補正TEMの深さ分解能を利用した金属ナノ粒子三次元分布計測法の開発2019

    • Author(s)
      鹿野正起, 山﨑順, 齋藤晃, 吉田健太, 小林慶太
    • Organizer
      日本物理学会 第74回年次大会
  • [Presentation] Formation of Ultra-Low Resistance Contact with Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure2018

    • Author(s)
      J. Jihee, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
    • Organizer
      1st Joint Conference ICSI / ISTDM 2018
    • Int'l Joint Research
  • [Presentation] Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer2018

    • Author(s)
      M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
    • Organizer
      1st Joint Conference ICSI / ISTDM 2018
    • Int'l Joint Research
  • [Presentation] Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications2018

    • Author(s)
      O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
    • Organizer
      European Materials Research Society (2018 E-MRS Spring Meeting)
    • Int'l Joint Research / Invited
  • [Presentation] GeSn-based thin film thermoelectric generators2018

    • Author(s)
      M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
    • Organizer
      International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018)
    • Int'l Joint Research / Invited
  • [Presentation] Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films2018

    • Author(s)
      O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima
    • Organizer
      IEEE Photonics Society Summer Topical Meeting Series 2018
    • Int'l Joint Research / Invited
  • [Presentation] 多結晶Ge1-xSnx薄膜熱電素子の低温形成2018

    • Author(s)
      髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
    • Organizer
      第2回フォノンエンジニアリング研究グループ研究会
  • [Presentation] 単結晶p型Ge0.95Sn0.05薄膜の熱電特性におけるドメインサイズの効果2018

    • Author(s)
      今井志明, 高橋恒太, 内田紀行, 前田辰郎, 中塚理, 財満鎭明, 黒澤昌志
    • Organizer
      第2回フォノンエンジニアリング研究グループ研究会
  • [Presentation] Thin Film Growth and Characterization of Group-IV Alloy Semiconductors for Future Nanoelectronic Applications2018

    • Author(s)
      O. Nakatsuka, M. Kurosawa, and S. Zaima
    • Organizer
      The 9th International Conference on Physics and Its Applications (ICOPIA)
    • Int'l Joint Research / Invited
  • [Presentation] Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films2018

    • Author(s)
      O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM 2018)
    • Int'l Joint Research / Invited
  • [Presentation] SiO2上に形成したGe1-xSnx多結晶薄膜の熱電特性評価2018

    • Author(s)
      今井志明, 高橋恒太, 中塚理, 財満鎭明, 黒澤昌志
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] エピタキシャルHfGe2/Ge接合の形成と結晶構造および電気伝導特性2018

    • Author(s)
      千賀一輝, 中塚理, 鈴木陽洋, 坂下満男, 財満鎭明
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] 高Si組成歪緩和Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の形成および光電特性評価2018

    • Author(s)
      福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] イオン注入基板によるGe1-x-ySixSnyエピタキシャル層の歪緩和促進2018

    • Author(s)
      祖父江秀隆, 福田雅大, 中塚理, 財満鎭明
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] GaSb基板上におけるSi1-xSnx薄膜の結晶成長2018

    • Author(s)
      丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] MOCVD法によるGe1-xSnx薄膜成長におけるSn析出過程2018

    • Author(s)
      三鬼悠輔, 竹内和歌奈, 中塚理, 財満鎭明
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] 溶融成長法によるGe1-xSnx細線の形成と電気特性評価2018

    • Author(s)
      高橋恒太, 今井祐太, 西嶋泰樹, 清水智, 黒澤昌志, 角田功, 中塚理, 財満鎭明
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] 熱電特性評価に向けた組成傾斜SixGe1-x細線の形成2018

    • Author(s)
      中田壮哉, 高橋恒太, 西嶋泰樹, 清水智, 角田功, 中塚理, 財満鎭明, 渡邉孝信, 黒澤昌志
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] Formation of laterally graded SixGe1-x stripes for thermoelectric generator2018

    • Author(s)
      M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa
    • Organizer
      The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
    • Int'l Joint Research
  • [Presentation] Composition and Strain Engineering of New Group-IV Thermoelectric Materials2018

    • Author(s)
      M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
    • Organizer
      AiMES 2018 Meeting
    • Int'l Joint Research / Invited
  • [Presentation] Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact2018

    • Author(s)
      O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima
    • Organizer
      Advanced Metallization Conference 2018: 28th Asian Session (ADMETA Plus 2018)
    • Int'l Joint Research
  • [Presentation] Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure2018

    • Author(s)
      M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
    • Organizer
      14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
    • Int'l Joint Research
  • [Presentation] Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation2018

    • Author(s)
      Y. Peng, M. Kurosawa, O. Nakatsuka, L. Miao, J. Gao, and S. Zaima
    • Organizer
      14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
    • Int'l Joint Research
  • [Presentation] SixGe1-x-ySny三元混晶界面層の結晶物性が金属/Ge界面Schottky障壁高さに及ぼす影響2018

    • Author(s)
      中塚理, 鈴木陽洋, 坂下満男, 財満鎭明
    • Organizer
      Advanced Metallization Conference: Satellite Workshop (ADMETA Satellite Workshop)
  • [Presentation] GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications2018

    • Author(s)
      O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima
    • Organizer
      12th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research / Invited
  • [Presentation] Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method2018

    • Author(s)
      Y. Miki, W. Takeuchi, S. Shibayama, O. Nakatsuka, and S. Zaima
    • Organizer
      12th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
  • [Presentation] Formation of Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure with Ultra-Low Contact Resistivity2018

    • Author(s)
      J. Jeon, A. Suzuki, S. Shibayama, O. Nakatsuka, and S. Zaima
    • Organizer
      12th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
  • [Presentation] Investigation of a germanium-on-insulator band-stop filter2018

    • Author(s)
      C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
  • [Presentation] Fabrication of high-Q ring resonator using low loss GeOI wafer2018

    • Author(s)
      Z. Zhao, C. P. Ho, S. Takagi, and M. Takenaka
    • Organizer
      8th International Symposium on Photonics and Electronics Convergence (ISPEC2018)
    • Int'l Joint Research
  • [Presentation] Electronic-photonic integrated circuits based on heterogeneous integration of III-V, Ge, and 2D materials on Si2018

    • Author(s)
      M. Takenaka
    • Organizer
      Korean Institute of Science and Technology (KIST)
    • Int'l Joint Research / Invited
  • [Presentation] Low-power Ge thermo-optic phase shifter on Ge-on-Insulator platform2018

    • Author(s)
      T. Fujigaki, S. Takagi, and M. Takenaka
    • Organizer
      European Conference on Optical Communication (ECOC 2018)
    • Int'l Joint Research
  • [Presentation] Proposal of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelengths2018

    • Author(s)
      Y. Taguchi, S. Takagi, and M. Takenaka
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
  • [Presentation] Heterogeneous integration of III-V/Ge on Si for photonic integrated circuits2018

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      Progress In Electromagnetics Research Symposium (PIERS2018)
    • Int'l Joint Research / Invited
  • [Presentation] Ge-on-insulator platform for mid-infrared integrated photonics2018

    • Author(s)
      M. Takenaka, and S. Takagi
    • Organizer
      IEEE Summer Topicals Meeting Series
    • Int'l Joint Research / Invited
  • [Presentation] 酸化物半導体/IV族半導体を用いた超低消費電力トンネルトランジスタ2018

    • Author(s)
      藤垣匠, 高木信一, 竹中充
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] Fabrication of High-Q Ring Resonator using n-type GeOI wafer2018

    • Author(s)
      Z. Zhao, C. Ho, S. Takagi, and M. Takenaka
    • Organizer
      第79回応用物理学会秋季学術講演会
  • [Presentation] ハイドライド気相成長により作製したGaNコアシェルナノワイヤ中の歪み分布計測2018

    • Author(s)
      齋藤晃, 西皓平, L. Kaddour, S. Y. Bae, 天野浩
    • Organizer
      日本顕微鏡学会 第74回学術講演会
  • [Presentation] 収差補正TEMを用いた非整合エピタキシャル界面のラフネス計測2018

    • Author(s)
      鹿野正起, 山﨑順, 齋藤晃
    • Organizer
      日本顕微鏡学会 第74回学術講演会
  • [Presentation] 辞書学習による電子顕微鏡画像の圧縮センシング2018

    • Author(s)
      野村優貴, 山本和生, 平山司, 齋藤晃
    • Organizer
      日本顕微鏡学会第74回学術講演会
  • [Presentation] 電子線ロッキングカーブの反復位相回復による積層欠陥の変位ベクトルの決定2018

    • Author(s)
      石塚宏幸, 齋藤晃
    • Organizer
      日本顕微鏡学会第74回学術講演会
  • [Presentation] 実空間走査透過電子顕微鏡法をもちいた結晶中の電子伝播過程の観察2018

    • Author(s)
      鈴田朋也, 石田高史, 齋藤晃
    • Organizer
      日本顕微鏡学会第74回学術講演会
  • [Presentation] 辞書学習による原子分解能HAADF-STEM像のノイズ除去およびその定量性の評価2018

    • Author(s)
      服部颯介, 野村優貴, 齋藤晃
    • Organizer
      日本顕微鏡学会第74回学術講演会
  • [Remarks] 物質科学専攻・物質デバイス機能創成学講座・ナノ電子デバイス工学研究グループ

    • URL

      http://alice.xtal.nagoya-u.ac.jp/nanoeledev/papers.html

URL: 

Published: 2019-12-27  

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