Study of melt growth mechanisms of multicrystalline Si by in situ observations

2016 Fiscal Year Final Research Report

• Project/Area Number: 26246016
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: Fujiwara Kozo 東北大学, 金属材料研究所, 教授 (70332517)
• Co-Investigator(Kenkyū-buntansha): 沓掛 健太朗 東北大学, 金属材料研究所, 助教 (00463795)
• Project Period (FY): 2014-06-27 – 2017-03-31
• Keywords: 固液界面 / Si多結晶 / その場観察

Outline of Final Research Achievements

The fundamental melt growth mechanisms of multicrystalline Si (mc-Si) were investigated to obtain valuable information for the development of crystal growth technology of mc-Si ingots for solar cells. We newly developed an in situ observation system for the direct observation of crystal/melt interface at high temperature as 1400℃. The effect of grain boundaries on the crystal growth behaviors was clarified. On the basis fo the fundamental understanding of crystal growth mechanisms, we developed a crystal growth technology for mc-Si ingot. We obtained high quality mc-Si ingot in comparison with the conventional one.

Free Research Field

結晶成長物理学