Next generation spin transistors using high-quality interfaces

2017 Fiscal Year Final Research Report

• Project/Area Number: 26249039
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Ohya Shinobu 東京大学, 大学院工学系研究科(工学部), 准教授 (20401143)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 分子線エピタキシー / 半導体 / 酸化物 / スピントランジスタ / スピン注入

Outline of Final Research Achievements

In our project, we have obtained various results mainly related　to　the　realization　of　spin　transistors,　as　follows.　1)　Operation　of　vertical　spin　transistors using ferromagnetic semiconductor GaMnAs. 2) Observations of novel physics using the quantum size effect of GaMnAs quantum wells. 3) Large magnetoresistance in a lateral spin valve device using GaMnAs. 4) First realization of room temperature operation of a vertical spin transistor using an oxide semiconductor. 5) Understanding of the origin of the ferromagnetism of new magnetic semiconductors based on Ge 6) Observation of peculiar spin tunneling transport in ferromagnetic perovskite oxide heterostructures. 7) First realization of spin-to-charge conversion in a topological crystalline insulator. 8) Ultra fast control of a band structure and magnetization using ultra short light pulses.

Free Research Field

スピントロニクス