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2016 Fiscal Year Final Research Report

Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization

Research Project

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Project/Area Number 26249046
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionTokyo Institute of Technology

Principal Investigator

MIYAMOTO Yasuyuki  東京工業大学, 工学院, 教授 (40209953)

Co-Investigator(Kenkyū-buntansha) 鈴木 寿一  北陸先端科学技術大学院大学, 学内共同利用施設等, 教授 (80362028)
Co-Investigator(Renkei-kenkyūsha) KANAZAWA Toru  東京工業大学, 工学院, 助教 (40514922)
Project Period (FY) 2014-04-01 – 2017-03-31
KeywordsトンネルFET / ヘテロ接合 / 化合物半導体
Outline of Final Research Achievements

In order to improve the performance of the integrated circuit, it is necessary to simultaneously perform high on-current / low off-current / low power supply voltage. To realize that, research and development of a hetero structure and a fine multi gate structure combined with different materials for a tunnel FET (TFET) which operates on a different principle from the conventional one is necessary.
Based on the theoretical calculation, a double gate structure InGaAs / GaAsSb tunnel FET with a width of 20 nm was fabricated, and the subthreshold characteristic showing the change in current with respect to the gate voltage was confirmed to be 68 mV / dec, which is lower than the conventional one.

Free Research Field

化合物半導体電子デバイス

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Published: 2018-03-22  

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