Reliability design for lifetime prediction, failure prevention, and degradation recovery of integrated circuits

2016 Fiscal Year Final Research Report

• Project/Area Number: 26280014
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Computer system
• Research Institution: Kyoto University
• Principal Investigator: Sato Takashi 京都大学, 情報学研究科, 教授 (20431992)
• Co-Investigator(Kenkyū-buntansha): 廣本 正之 京都大学, 情報学研究科, 助教 (60718039)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 電子デバイス / デバイス設計・製造プロセス / シミュレーション / デバイスモデル

Outline of Final Research Achievements

Metal-oxide field effect transistors are the major components of integrated circuits. The performance of the transistors is known to degrade as they are stressed during the use in the integrated circuits. In this project, we measured and characterized degradation of the transistors in integrated circuits. By using the developed degradation model, the transistors that are particularly prone to be stressed are pointed out, and their individual degradations are quantitatively estimated. A circuit design methodology, which promotes the recovery of transistors, is also proposed.

Free Research Field

集積回路工学