Developments of high mobility uniaxially strained Germanium channel devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286044
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Tokyo City University
• Principal Investigator: Sawano Kentarou 東京都市大学, 工学部, 教授 (90409376)
• Co-Investigator(Renkei-kenkyūsha): ARIMOTO Keisuke 山梨大学, 医学工学総合研究部, 准教授 (30345699)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: ゲルマニウム / 結晶歪み / イオン注入 / 一軸性歪み / 結晶欠陥

Outline of Final Research Achievements

Toward next-generation low-power-consumption and high performance semiconductor electronic devices, we focused on germanium (Ge) as a superior material alternative to silicon and developed a technique to induce crystal strain into Ge. Particularly anisotropic strain states are expected to bring the highest mobility in Ge, we developed selective ion-implantation method and succeeded in arbitral controlling of strain states by local introduction of crystal defects. As a result, we created uniaxially strained Ge by this method. Moreover, we fabricated strained Ge on insulator (GOI) substrates, which is very promising for next-generation high-mobility Ge devices.

Free Research Field

半導体工学