2016 Fiscal Year Final Research Report
Growth of ZnOS quantum dot films and its application to light emitting devices
| Project/Area Number |
26410252
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Device related chemistry
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | ZnOS / 量子ドット / p型化 / 発光 |
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| Outline of Final Research Achievements |
We have revealed the electrical and optical properties of ZnOS films grown by sputtering, pulsed laser deposition (PLD), and chemical vapor deposition (CVD). By PLD with S-evaporation, p-type ZnOS films with S-content of 30% were grown. The growth of p-type ZnOS films was also achieved by ZnOS target containing 2 mol% Na atoms. ZnOS films containing quantum dots were grown by CVD. As the growth temperature decreases, the optical band gap of ZnOS films is enhanced. The ZnOS films grown at 125 °C exhibit a defect-related emission at 500 nm. The ordered ZnOS films, which were prepared at interfaces between ZnO and ZnS films, show an inter-band emission in the range of 350 to 400 nm.
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| Free Research Field |
化学
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