Development of fundamental technology for the fabrication of flexible solution-processable organic transistor memories

2016 Fiscal Year Final Research Report

• Project/Area Number: 26420276
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka Prefecture University
• Principal Investigator: Nagase Takashi 大阪府立大学, 工学(系)研究科(研究院), 准教授 (00399536)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 有機トランジスタ / 有機メモリ / 塗布型有機半導体 / フローティングゲート / 溶液プロセス / トップゲート構造

Outline of Final Research Achievements

We have developed nonvolatile organic transistor memories that enable to fabricate all organic layers by simple solution processes using soluble molecular semiconductors as floating gates. It is found that developed memory devices exhibit large threshold voltage shifts, good programming/erasing characteristics, and a relatively long charge retention time. We have shown that the operation mechanism of the memory devices can be explained on the basis of the energy band diagrams of organic semiconductors.

Free Research Field

有機エレクトロニクス