2016 Fiscal Year Final Research Report
Development of III-V quantum dot / silicon evenescent hybrid lasers
| Project/Area Number |
26420300
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
|
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| Research Institution | Kyoto University (2015-2016)
The University of Tokyo (2014) |
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Principal Investigator |
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | 光集積回路 / 光通信 / 半導体レーザ / シリコン / ウェハ貼り合わせ / 量子ドット |
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| Outline of Final Research Achievements |
We have realized a quantum dot-gained, evenescently waveguide-coupled hybrid silicon laser. This device comprises a InAs quantum dot optical gain medium and silicon waveguides, and has been fabricated via wafer bonding and layer transfer. We have then achieved the world's higest-temperature operation by utilizing high-performance semiconductor quantum dots, while the earlier hybrid silicon lasers used quantum wells as gain media. Our result is an important step in the development of high-density photonic integrated circuits, which particularly requires high temperature stability, towards the realization of next-generation high-speed, large-volume, low-power-consumption communication and telecommunication.
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| Free Research Field |
材料工学
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