Study of coupled resonant spin-Hall effect in two-dimensional electron gas bilayer system

2015 Fiscal Year Final Research Report

• Project/Area Number: 26600012
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: Osaka Institute of Technology (2015); Japan Advanced Institute of Science and Technology (2014)
• Principal Investigator: Yamada Syoji 大阪工業大学, 教育センター, 教授 (00262593)
• Co-Investigator(Kenkyū-buntansha): Murakami Shuichi 東京工業大学, 理工学研究科, 教授 (30282685) ; Iwase Hiuma 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教 (10709132) ; Uchitomi Naotaka 長岡科学技術大学, 工学研究科, 教授 (20313562)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: スピンホール効果 / ２次元電子系 / ２層系 / スピントランジスタ

Outline of Final Research Achievements

In this study, starting from the theoretical work proposing the resonant spin-Hall effect in two-dimensional bilayer system with spin-orbit interaction (SOI), we have tried to observe such a phenomenon. The material is a narrow-gap semiconductor hetero-junction which has a strong Rashba type SOI and fabricate multi-terminal Hall bar which has three regions, spin-injection, -diffusion and -detection, with a top gate in each. We have measured inverse spin-Hall (ISHE) voltage in a detection region in a non-local measurement configuration due to the spin diffusion flow created by spin-Hall effect in a injection region. As a result, we confirmed resonant peak in a sum of voltages from top- and side-probes, indicating the existence of the ISHE signal, although the final conclusion is not yet obtained. We also studied theoretical aspects of this problem.

Free Research Field

半導体物理学、半導体工学