Formation of Pulsed Discharges in Molten Semiconductors and Their Application to Crystal Growth

2015 Fiscal Year Final Research Report

• Project/Area Number: 26630368
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Material processing/Microstructural control engineering
• Research Institution: Kyushu University
• Principal Investigator: TEII Kungen 九州大学, 総合理工学研究科(研究院), 准教授 (10335995)
• Co-Investigator(Renkei-kenkyūsha): KATO Yoshimine 九州大学, 大学院工学研究院, 准教授 (60380573)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: パルスパワー / 半導体 / 結晶成長

Outline of Final Research Achievements

For efficient consumption of electric power and development of high performance electronic devices, power semiconductor devices using high-quality semiconductors are increasingly desired. In this study, discharges were generated in molten semiconductor materials by applying pulse power and their electrical properties were characterized. Also semiconductor crystals were grown by using the pulsed discharges. As a result, the process conditions for efficient generation of high-density pulsed discharges were found and semiconductor crystals were successfully grown by using the high-density pulsed discharges.

Free Research Field

無機材料・物性