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1987 Fiscal Year Final Research Report Summary

Crystal Growth of 3C-SiC by Molecular Beam Epitaxial Method and its Application to Millimeter-wave Devies.

Research Project

Project/Area Number 60460118
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTechnological University of Nagaoka

Principal Investigator

KANEDA Shigeo  Professor of Technological University of Nagaoka, 工学部, 教授 (00029406)

Co-Investigator(Kenkyū-buntansha) YASUI Kanzi  Assistant of Technological University of Nagaoka, 工学部, 助手 (70126481)
INOUE Yasunobu  Assistant Professor of Technological University of Nagaoka, 分析計測センター, 助教授 (30016133)
KAMATA Kiichiro  Assistant Professor of Technological University of Nagaoka, 工学部, 助教授 (80100999)
HIROTSU Yoshihiko  Assistant Professor of Technological University of Nagaoka, 工学部, 助教授 (70016525)
KANBAYASHI Toshio  Assistant Professor of Technological University of Nagaoka, 工学部, 助教授 (20111669)
Project Period (FY) 1985 – 1987
KeywordsMOLECULAR BE@aM EPITAXY / SiC SINGLE CRYSTAL / CRYSTAL CHARACTERIZATION / MICROWAVE (MILLIMETER
Research Abstract

This project has following two main objects:
1. Establishment of crystal growth method of 3C-SiC having high quality by molecular beam epitaxial (MBE) method,
2. Development of tigh ability semiconductor devices using SiC especially Sic-IMPATT device applicable to microwave frequency region.
According to the numerous experimental researches, we obtained many useful results as mentioned below though there is still remained some problems for the application to practical devices,
1. MBE method is noe of the most efective dgrowth method of SiC single crystal having high quality,
2. This growth method is enough applied to the fabrication of p-n junction devices,
3. It must be necessary to develop the more precise control method during the crystal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.

  • Research Products

    (13 results)

All Other

All Publications (13 results)

  • [Publications] 金田重男: 電子通信学会技術研究報告. SSD86-35. 41-48 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Shigeo KANEDA: Jpn. J. Appl. Phys.25. 1307-1311 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 金田重男: 電子通信学会論文誌. J69-C. 941-942 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Sigeo KANEDA: Electronics Lett.22. 92-93 (1986)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] MBE Growth of 3C-SiC/6H-SiC and the Electric Properties of Its p-n Junction.: J. Cryst. Growth. 81. 536-542 (1987)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 本山慎一: 電子情報通信学会, 技術研究報告. ED87-76. 43-49 (1987)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 佐々木昭夫 他: "電子デバイス工学" 昭晃堂, 229 (1985)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Shigeo KANEDA: "The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating." Jpn. J. Appl. Phys.25. 1307-1311 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shigeo KANEDA: "Infrared Light Modulator Using the Effect of Free Carrier Absorption." Trans. IECE. J69-C. 941-942 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shigeo KANEDA: "Infra-red Light Modulator of Ridge-type Optical Waveguide Structure Using Effect of Free-carrier Absorption." Electronics Lett.22. 92-93 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shigeo KANEDA: "MBE Growth of 3C-SiC/6H-SiC and the Electric Properties of Its p-n Junction." J. Cryst. Growth. 81. 536-542 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shin-ichi MOTOYAMA: "Crystal Growth of SiC Used for Microwave Devices by Gas Source MBE Method." Tech. Repts. IEICE. 87-76. 43-49 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Akio SASAKI: "Electron Devices" Shoko-dou. 229 (1985)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1989-03-30  

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