1989 Fiscal Year Final Research Report Summary
Crystal Growth of 3C-SiC by Molecular Beam Epitaxial Method and Its Application to Millimeter-wave Devices.
| Project/Area Number |
60460118
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Technological University of Nagaoka |
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Principal Investigator |
KANEDA Shigeo Professor of Technological University of Nagaoka, 工学部, 教授 (00029406)
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| Co-Investigator(Kenkyū-buntansha) |
YASUI Kanzi Assistant of Technological University of Nagaoka, 工学部, 助手 (70126481)
INOUE Yasunobu Assistant Professor of Technological University of Nagaoka, 分析計測センター, 助教授 (30016133)
KAMATA Kiichiro Assistant Professor of Technological University of Nagaoka, 工学部, 助教授 (80100999)
HIROTSU Yoshihiko Assistant Professor of Technological University of Nagaoka, 工学部, 助教授 (70016525)
KANBAYASHI Toshio Assistant Professor of Technological University of Nagaoka, 工学部, 助教授 (20111669)
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| Project Period (FY) |
1985 – 1987
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| Keywords | NOLECULAR BEAM EPITAXY / SiC SINGLE CRYSTAL / CRYSTAL CHARACTERIZATION / MICROWAVE (MILLIMETER-WAVE) SEMICONDUCTOR DEVICES |
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| Research Abstract |
This project has following two main objects:
1. Establishment of crystal growth method of 3C-SiC having high quality by molecular beam epitaxial (MBE) method,
2. Development of-high ability semiconductor devices using SiC especially SiC IMPATT device applicable to microwave frequency region.
According to the numerous experimental researches, we obtained many useful results as mentioned below though there is still remained some problems for the application to practical devices,
1. MBE method is one of the most effective growth method of SiC single crystal having high quality, 2. This growth method is enough applied to the fabrication of p-n junction devices, 3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.
2. This growth method is enough applied to the fabrication of p-n junction devices, 3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.
3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.
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