1986 Fiscal Year Final Research Report Summary
Feasibility Study of Traveling Wave Devices Using Compound Semiconductor Superlattice Structures
| Project/Area Number |
60850057
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Hokkaido University |
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Principal Investigator |
FUKAI Ichiro Faculty of Engineering, Hokkaido University , Prof., 工学部, 教授 (70001740)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMOZUMA Mitsuo Faculty of Engineering, Hokkaido University , Instractor, 工学部, 助手 (70041960)
OHNO Hideo Faculty of Engineering, Hokkaido University , Associate prof., 工学部, 助教授 (00152215)
HASEGAWA Hideki Faculty of Engineering, Hokkaido University , Prof., 工学部, 教授 (60001781)
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| Project Period (FY) |
1985 – 1986
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| Keywords | Compound semiconductor / Superlattice / Microwave device / Traveling-wave amplification / MOVPE / MBE / プラズマCVD |
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| Research Abstract |
The purpose of the research is to investigate the feasibility of new-type of traveling wave devices using compound semiconductor superlattice structures. The main results are the following:
[1] Theoretical analysis of the traveling wave interactions was made on the superlattice structures with finite dimensions of semiconductor plasma. An ideal non-dispersive slow wave structure and an interdigital slow wave structure were studied with the latter involving a complicated self-consistent computer field analysis over space harmonic field components present in the semiconductor plasma of finite dimensions. The analysis has clearly shown the feasibility of microwave and millimeter-wave traveling wave devices. Importance of Debye screening length of plasma with respect to the active layer thickness was demonstrated and the advantage of superlattice structure was indicated.
[2] Dielectric spacers with a high breakdown field strength and minimal deposition damage to Semiconductor active layers is essential for coupling between slow-wave and semiconductor carrier wave. For this purpose, a room temperature deposition process of PCVD silicon nitride was successfully developed, using 50Hz plasma.
[3] Three kinds of interdigital traveling wave devices having n-GaAs MOVPE single layer, AlGaAs-GaAs MBE hetero structure layers and n-InP single layer as the active layer, respectively, were fabricated. Two-terminal admittance measurements clearly indicated presence of traveling wave interactions at microwave frequencies in all types of the experimental devices. Furthermore, the measured behavior of two-terminal admittance of the InP device showed an excellent agreement with the result of the detailed computer simulation, establishing the design philosophy for devices with the maximum interaction gain.
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