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1989 Fiscal Year Final Research Report Summary

Preparation of Ceramics Coating Films and Surface Modification by Controlled Plasmas

Research Project

Project/Area Number 62430015
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field 無機工業化学
Research InstitutionHokkaido University

Principal Investigator

YAMASHINA Toshiro  Fac. of Eng., Hokkaido Univ., Professor, 工学部, 教授 (40001193)

Co-Investigator(Kenkyū-buntansha) FUKUDA Shin  Fac. of Eng., Hokkaido Univ., Assistant, 工学部, 助手 (30189948)
HIROHATA Yuko  Fac. of Eng., Hokkaido Univ., Assistant, 工学部, 助手 (00189896)
Project Period (FY) 1987 – 1989
KeywordsPlasma / Ceramics / Surface modification / Thin films / Plasma diagnostics / Plasma nitrization / Gas nitrization / Emission spectrum
Research Abstract

FCR plasma Deposition Device had been constructed in 1988. Optical emission spectrometer and electro-static probe have been attached to this apparatus for plasma diagnostics. The sample can be heated up to 800゚C and be biased to for desirable particle species to bombard on the substrate. By changing discharge pressure, microwave power, substrate bias and temperature, we had a series of nitrization experiments for Zr, Ti and Ta. The nitrized sample due to nitrogen plasma was compared with that due to usual gas nitrization. The nitrogen content at the surface was determined by Auger Electron Spectroscopy.
It was observed that the plasma nitrization was more effective than the gas nitrization. In particular, the material surface was well nitrized by nitrogen plasmas even at lower temperature (500-600゚C). As the discharge pressure was reduced, the ion species relatively became dominant than the nitrogen radical species. In this case, the nitrization very well progressed by the ion species. Although it was believed that the nitrogen radical was effective for nitrization, the present experiment showed that ion species was very effective for the nitrization. We then tried to enhance the ion species by applying negative voltage to the substrate. The nitrization progressed as the increase of ion flux, i.e. negative bias potential. This experiment showed that the surface modification could be considerably adjusted by the controlled plasma.

  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] 山科俊郎: "プラズマによる材料改質と薄膜の合成" JUIA会報、日本真空工業会. 8. 10-17 (1989)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 山科俊郎: "プラズマおよび熱プロセスによる表面改質とコ-ティング膜の作製" 日本金属学会会報. 27. 949-957 (1988)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 水月直樹: "ECR窒素プラズマによるジルコニウムの表面改質" 真空に掲載予定(1990).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Toshiro Yamashina: "Preparation of Thin and surface modification by Plasma" Journal of Japan Vacuum Industrial Association. 8. 10-17 (1989)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Toshiro Yamashina: "Preparation of Coating Films and Surface modification by Plasma and Thermal Processes" Journal of Japan Metal Society, 27, 1989, p.949-957.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Naoki Suigetsu: "Surface Modification of Zirconium by ECR Nitrogen Plasma" Sinku, 1990.

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1993-03-26  

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