1990 Fiscal Year Final Research Report Summary
Layer-by-Layer Preparation and Property of Functional Ceramics with Artificial Lattices.
| Project/Area Number |
62430016
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学
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| Research Institution | Okayama University |
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Principal Investigator |
MIURA Y Okayama Univ., Faculty of Eng., Prof., 工学部, 教授 (80032952)
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| Co-Investigator(Kenkyū-buntansha) |
NANBA T Okayama Univ., Faculty of Eng., Research associate, 工学部, 助手 (80218073)
OSAKA A Okayama Univ., Faculty of Eng., Associate prof., 工学部, 助教授 (20033409)
BANDO Y Kyoto Univ., Institute for Chemical Research, Prof., 化学研究所, 教授 (70027027)
TAKADA J Okayama Univ., Faculty of Eng., Prof., 工学部, 教授 (60093259)
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| Project Period (FY) |
1987 – 1990
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| Keywords | Ceramic artificial lattice / Electron-beam evaporation apparatus / Activated reactive evaporation / Thin films for electronics |
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| Research Abstract |
A few metals were evaporated in vacuum from each source, heated by an electron beam or a resistance heater, and were reacted with activated gases in order to deposit thin films of relevant compounds (Activated reactive evaporation, ARE, method). Employing the ARE method we have prepared several oxidefilms of artificial lattices and epitaxically grown films of single oxides, examined their structure, and measured physical properties. The results are :
1) Thin oxide films of artificial lattices were prepared in the systems CoO/NiO, Fe_3O_4/CoO and Fe_3O_4/SiO_2. They had distorted superlattices, whose magnetic structures and magnetic transformation temperatures depended on their film thickness.
2) CoO/SiO_X layered films were prepared. Hydrogen reduction yielded the layered Co/SiO_X films in which a layer of ultrafine particles of metallic Co were sandwiched between the SiO_X layers. The Co particles were superparamagnetic and protected by the SiO_X layers.
3) Simultaneous reactive evaporat
… More
ion of Cu, Y and Ba yielded superconducting YBa_2Cu_3O_<7-X> films at 600ﾟC having Tc=90K and Jc=4x10^6 A・cm^<-2>.
4) Though each layer of thinner films of NiO/ZnO artificial lattices took a NaCl type structure, the ZnO layer of thicker films took a Wurtzite structure.
5) (100) -oriented BaTiO_3 films were epitaxically grown on a substrate, SrTiO_3/Pt. The as-grown films were ferroelectric and had a resistance >10^9 OMEGA・cm.
6) We have established a routine to prepare stoichiometric PbTiO_3 with preferred orientation : c-axis oriented films were deposited on MgO (100) substrates and (111) -oriented ones on the sapphire c-planes. Those as-grown films were ferroelectric and exhibited good pyroelectricity.
7) A detailed examimation was made on the mechanism of diposition c-axis oriented ZnO films on silica glass substrates. Transparent electroconductive films of Al doped ZnO were prepared. The transparent films doped with 2-5% Al could be deposited on the substrate whose temperature was kept at as lowas 150^0C, and they had specific resistivity <1x10^<-3> OMEGA・cm. Less
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