Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications

• Project/Area Number: 15H03975
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: Shimura Takayoshi 大阪大学, 工学研究科, 准教授 (90252600)
• Co-Investigator(Renkei-kenkyūsha): WATABABE Heiji 大阪大学, 大学院工学研究科, 教授 (90379115) ; HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000); Fiscal Year 2017: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2016: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000); Fiscal Year 2015: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
• Keywords: 電気・電子材料 / 作成・評価技術 / エピタキシャル成長 / 半導体 / ゲルマニウム / シリコンフォトニクス / 電子・電気材料 / 結晶工学 / 電子デバイス / 結晶成長

Outline of Final Research Achievements

We have fabricated GeSn wires by liquid-phase epitaxy during rapid thermal annealing. The field effect transistor with the GeSn wires exhibited field effect hole mobility of 423 cm2/Vs. The GeSn pn-photodiode showed good optical response for 1.55 um wavelength.

Research Products

• [Journal Article] Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization (2018)
  • Author(s): H. Oka, T. Tomita, T. Hosoi, T. Shimura, and H. Watanabe
  • Journal Title: Applied Physics Express Volume: 11 Issue: 1 Pages: 011304-011304
  • DOI: 10.7567/apex.11.011304
  • NAID: 210000136058
  • Peer Reviewed / Open Access
• [Journal Article] Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization (2017)
  • Author(s): H. Oka, T. Amamoto, M. Koyama, Y. Imai, S. Kimura, T. Hosoi, T. Shimura, and H. Watanabe
  • Journal Title: Applied Physics Letters Volume: 110 Issue: 3 Pages: 032104-032104
  • DOI: 10.1063/1.4974473
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy (2015)
  • Author(s): T. Shimura, M. Matsue, K. Tominaga, K. Kajimura, T. Amamoto, T. Hosoi, and H. Watanabe
  • Journal Title: Applied Physics Letters Volume: 107 Issue: 22 Pages: 221109-221109
  • DOI: 10.1063/1.4936992
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy (2015)
  • Author(s): T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
  • Journal Title: ECS Transactions Volume: 69 Issue: 5 Pages: 305-311
  • DOI: 10.1149/06905.0305ecst
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成 (2018)
  • Author(s): 冨田 崇史, 岡 博史, 井上 慶太郎, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: 電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）
• [Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用 (2018)
  • Author(s): 細井 卓治, 岡 博史, 井上 慶太郎, 志村 考功, 渡部 平司
  • Organizer: 電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）
• [Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価 (2018)
  • Author(s): 岡 博史, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製 (2018)
  • Author(s): 岡 博史, 黒木 伸一郎, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT (2017)
  • Author(s): 岡 博史, 冨田 崇史, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: 2017年春季 第64回応用物理学関係連合講演会
  • Place of Presentation: 横浜
  • Year and Date: 2017-03-14
• [Presentation] 横方向液相成長によって作製した引張歪み高濃度n 型Ge 細線の光学特性評価 (2017)
  • Author(s): 冨田 崇史，岡 博史，小山 真広，田中 章吾，細井 卓治，志村 考功，渡部 平司
  • Organizer: 2017年春季 第64回応用物理学関係連合講演会
  • Place of Presentation: 横浜
  • Year and Date: 2017-03-14
• [Presentation] Enhancement-Mode N-Channel TFT and Room-Temperature Near-Infrared Emission Based on n+/p Junction in Single-Crystalline GeSn on Transparent Substrate (2017)
  • Author(s): H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
  • Organizer: 2017 Symposium on VLSI Technology
  • Int'l Joint Research
• [Presentation] Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip (2017)
  • Author(s): H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, H. Watanabe
  • Organizer: 63rd IEEE International Electron Devices Meeting (2017 IEDM)
  • Int'l Joint Research
• [Presentation] Single-Crystalline GeSn Formation on Transparent Substrate and its Optoelectronic Applications (2017)
  • Author(s): T. Hosoi
  • Organizer: The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
  • Int'l Joint Research / Invited
• [Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価 (2017)
  • Author(s): 岡 博史、井上 慶太、冨田 崇史、和田 裕希、細井 卓治、志村 考功、渡部 平司
  • Organizer: 2017年 第78回応用物理学会秋季学術講演会
• [Presentation] High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration (2016)
  • Author(s): H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
  • Organizer: IEEE International Electron Devices Meeting
  • Place of Presentation: San Francisco
  • Year and Date: 2016-12-05
  • Int'l Joint Research
• [Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy (2016)
  • Author(s): T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
  • Organizer: The 7th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: Kona, Hawaii
  • Year and Date: 2016-11-21
  • Int'l Joint Research
• [Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価 (2016)
  • Author(s): 冨田 崇史, 岡 博史, 小山 真広, 田中 章吾, 細井 卓治, 志村 考功, 渡部 平司
  • Organizer: 2016年秋季 第77回応用物理学関係連合講演会
  • Place of Presentation: 新潟市
  • Year and Date: 2016-09-13
• [Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy (2015)
  • Author(s): T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
  • Organizer: The 228th ECS Meeting
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2015-10-11
  • Int'l Joint Research / Invited