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Development of organometallic molecular ion beam deposition method for the stoichiometric crystal growth

Research Project

Project/Area Number 17H02997
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Plasma science
Research InstitutionOsaka University

Principal Investigator

Yoshimura Satoru  大阪大学, 工学研究科, 准教授 (40294029)

Co-Investigator(Kenkyū-buntansha) 竹内 孝江  奈良女子大学, 自然科学系, 准教授 (80201606)
Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2019: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2018: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2017: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Keywords有機金属 / イオンビーム / 結晶成長 / 有機金属分子 / シリコンカーバイド
Outline of Final Research Achievements

Fragment ions produced from hexamethyldisilane, tetraethylorthosilicate, or hexamethyldigermane in a Freeman-type ion source were investigated using a low-energy mass-selected ion beam system. Among these fragment ions, SiCH3+, Si(OH)3+, or GeCHx+ ions were mass-selected. The ion energy was in the range of 10-200 eV. Then, the SiCH3+, Si(OH)3+, or GeCHx+ ions were irradiated to Si substrates and resulting deposited films were analyzed. Following the completion of the ion irradiation experiment, X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy assays of the films demonstrated the occurrence of silicon carbide, silicon dioxide, or germanium carbide depositions. We conclude that the irradiation of the mass-selected fragment ions, obtained from hexamethyldisilane, tetraethylorthosilicate, or hexamethyldigermane to substrates is useful for the secure growth of silicon carbide, silicon dioxide, or germanium carbide films.

Academic Significance and Societal Importance of the Research Achievements

(1)本研究では、有機金属ナノクラスターイオンビーム法を開発し、これによるストイキオメトリ結晶形成技術の基盤を確立した。(2)本研究で成膜に成功した結晶種は、例えば、シリコンカーバイド(SiC)である。SiCは次世代の省エネ大電力用ワイドギャップ半導体である。(3)SiC成膜に通常用いられるシランは自己発火性がある。一方、本研究で原料に用いたヘキサメチルジシランは危険性が低く、これを使えば安全に成膜を行うことができる。(4)本研究で用いた原料はいずれもたいへん安価である。本研究の技術を使用すれば、SiCなどの半導体膜や酸化ケイ素などの絶縁体膜を、社会に安価で供給できるようになる。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (12 results)

All 2019 2018 2017

All Journal Article (7 results) (of which Peer Reviewed: 7 results,  Open Access: 2 results) Presentation (5 results)

  • [Journal Article] Effects of injected ion energy on silicon carbide film formation by low-energy SiCH3+ beam irradiation2019

    • Author(s)
      Yoshimura Satoru、Sugimoto Satoshi、Takeuchi Takae、Murai Kensuke、Kiuchi Masato
    • Journal Title

      Thin Solid Films

      Volume: 685 Pages: 408-413

    • DOI

      10.1016/j.tsf.2019.06.057

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane2019

    • Author(s)
      S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi
    • Journal Title

      AIP Advances

      Volume: 9 Issue: 9 Pages: 095051-095051

    • DOI

      10.1063/1.5116614

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Characteristics of films deposited by the irradiation of GeCHx+ ions produced from hexamethyldigermane and their dependence on the injected ion energy2019

    • Author(s)
      S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi
    • Journal Title

      Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

      Volume: 461 Pages: 1-5

    • DOI

      10.1016/j.nimb.2019.09.014

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond2019

    • Author(s)
      Yoshimura Satoru、Sugimoto Satoshi、Takeuchi Takae、Kiuchi Masato
    • Journal Title

      AIP Advances

      Volume: 9 Issue: 2 Pages: 025008-025008

    • DOI

      10.1063/1.5084181

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Identification of fragment ions produced from hexamethyldisilazane and production of low-energy mass-selected fragment ion beam2018

    • Author(s)
      Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi
    • Journal Title

      Nucl. Instrum. Meth. Phys. Res. B

      Volume: 430 Pages: 1-5

    • DOI

      10.1016/j.nimb.2018.05.040

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane2018

    • Author(s)
      Yoshimura Satoru、Sugimoto Satoshi、Takeuchi Takae、Murai Kensuke、Kiuchi Masato
    • Journal Title

      Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

      Volume: 420 Pages: 6-11

    • DOI

      10.1016/j.nimb.2018.01.031

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film2018

    • Author(s)
      Yoshimura Satoru、Sugimoto Satoshi、Takeuchi Takae、Murai Kensuke、Kiuchi Masato
    • Journal Title

      Thin Solid Films

      Volume: 655 Pages: 22-26

    • DOI

      10.1016/j.tsf.2018.04.003

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] 質量分離有機金属分子イオンビーム堆積法のストイキオメトリ成膜への応用2019

    • Author(s)
      吉村智、杉本敏司、竹内孝江、村井健介、木内正人
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] ヘキサメチルジシラザンの解離フラグメントによる低エネルギーケイ素分子イオンビームの生成2018

    • Author(s)
      吉村智、杉本敏司、竹内孝江、村井健介、木内正人
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 解離フラグメントによる有機金属イオンビームの生成とストイキオメトリ結晶成長2018

    • Author(s)
      吉村智、杉本敏司、竹内孝江、村井健介、木内正人
    • Organizer
      プラズマ・核融合学会第35回年会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 低エネルギーケイ素分子イオンビームの生成と酸化ケイ素成膜への応用2018

    • Author(s)
      吉村智、杉本敏司、竹内孝江、木内正人
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 低エネルギー有機ケイ素イオンビームの生成とSiC等成膜への応用2017

    • Author(s)
      吉村智、杉本敏司、竹内孝江、木内正人
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report

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Published: 2017-04-28   Modified: 2021-02-19  

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