Development of organometallic molecular ion beam deposition method for the stoichiometric crystal growth
| Project/Area Number |
17H02997
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Plasma science
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
竹内 孝江 奈良女子大学, 自然科学系, 准教授 (80201606)
|
|---|
| Project Period (FY) |
2017-04-01 – 2020-03-31
|
| Project Status |
Completed (Fiscal Year 2019)
|
| Budget Amount *help |
¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2019: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2018: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2017: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
|
|---|
| Keywords | 有機金属 / イオンビーム / 結晶成長 / 有機金属分子 / シリコンカーバイド |
|---|
| Outline of Final Research Achievements |
Fragment ions produced from hexamethyldisilane, tetraethylorthosilicate, or hexamethyldigermane in a Freeman-type ion source were investigated using a low-energy mass-selected ion beam system. Among these fragment ions, SiCH3+, Si(OH)3+, or GeCHx+ ions were mass-selected. The ion energy was in the range of 10-200 eV. Then, the SiCH3+, Si(OH)3+, or GeCHx+ ions were irradiated to Si substrates and resulting deposited films were analyzed. Following the completion of the ion irradiation experiment, X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy assays of the films demonstrated the occurrence of silicon carbide, silicon dioxide, or germanium carbide depositions. We conclude that the irradiation of the mass-selected fragment ions, obtained from hexamethyldisilane, tetraethylorthosilicate, or hexamethyldigermane to substrates is useful for the secure growth of silicon carbide, silicon dioxide, or germanium carbide films.
|
| Academic Significance and Societal Importance of the Research Achievements |
(1)本研究では、有機金属ナノクラスターイオンビーム法を開発し、これによるストイキオメトリ結晶形成技術の基盤を確立した。(2)本研究で成膜に成功した結晶種は、例えば、シリコンカーバイド(SiC)である。SiCは次世代の省エネ大電力用ワイドギャップ半導体である。(3)SiC成膜に通常用いられるシランは自己発火性がある。一方、本研究で原料に用いたヘキサメチルジシランは危険性が低く、これを使えば安全に成膜を行うことができる。(4)本研究で用いた原料はいずれもたいへん安価である。本研究の技術を使用すれば、SiCなどの半導体膜や酸化ケイ素などの絶縁体膜を、社会に安価で供給できるようになる。
|
Report
(4 results)
Research Products
(12 results)
