| Budget Amount *help |
¥109,100,000 (Direct Cost: ¥109,100,000)
Fiscal Year 2009: ¥17,600,000 (Direct Cost: ¥17,600,000)
Fiscal Year 2008: ¥29,200,000 (Direct Cost: ¥29,200,000)
Fiscal Year 2007: ¥34,800,000 (Direct Cost: ¥34,800,000)
Fiscal Year 2006: ¥27,500,000 (Direct Cost: ¥27,500,000)
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| Research Abstract |
With a combination of self-assembling formation of Si-quantum dots (QDs) and the silicidation of pre-grown Si-QDs promoted with an exposure to remote H2 plasma without external heating after ultrathin Ni film formation, a hybrid nanodots structure consisting of Ni-silicide nanodots and Si-QDs was fabricated and applied to a floating gate in MOS (Metal-Oxide-Semiconductor) capacitors. The charge storage capacity of the hybrid nanodots FG is attributable to a deep potential well of the Ni-silicide nanodots, and the charge injection characteristics measured with applications of pulsed gate biases can be interpreted in terms of multistep electron injection to and emission from the Ni-silicide nanodots through the discrete energy states of the underlying Si-QDs.
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