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A Study on New Three-Dimensional Ultra High-Speed and Low-Loss Power Devices with Electric Field Effect Drift Layer

Research Project

Project/Area Number 19686019
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field 電力工学・電気機器工学
Research InstitutionTohoku University

Principal Investigator

CHENG Weitao  Tohoku University, 未来科学技術共同研究センター, 助教授 (60431540)

Project Period (FY) 2007 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000)
Fiscal Year 2008: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2007: ¥22,620,000 (Direct Cost: ¥17,400,000、Indirect Cost: ¥5,220,000)
Keywordsパワーデバイス / 電界効果ドリフト層 / 3次元構造 / コーナー丸め効果 / 平坦化
Research Abstract

本研究は、より環境にやさしい省エネルギー社会の実現に重要な役割をもつ高速かつ低損失パワーデバイスの実用を目指し、デバイス形成プロセスおよびパワーデバイスの構造そのものに着目し、チャンネル抵抗などオン抵抗を大幅に低減することに成功し、シリコン系でもワイドギャップ系でも応用可能な非常に高性能かつ低損失な新しい2次元および高集積度の3次元パワーデバイスを実現可能であることを実証した。

Report

(3 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report
  • Research Products

    (45 results)

All 2009 2008 2007

All Journal Article (16 results) (of which Peer Reviewed: 16 results) Presentation (29 results)

  • [Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1/f Noise Tri-gate MOSFETs by Optimizing Device Structure2009

    • Author(s)
      Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi
    • Journal Title

      Microelectronic Engineering (to be published on June 2009)

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator2009

    • Author(s)
      WEITAO CHENG, AKINOBU TERAMOTO, TADAHIRO OHMI
    • Journal Title

      Electrochemical Society Transactions (to be published on May 2009)

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits2009

    • Author(s)
      Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
    • Journal Title

      Japanese Journal of Applied Physics Vol. 48

    • NAID

      210000066558

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers2009

    • Author(s)
      Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
    • Journal Title

      Journal of Vacuum Science & Technology B Vol.27, No.1

      Pages: 394-401

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI MOS transistors fabricated on (110) and (100) silicon-oriented wafers2009

    • Author(s)
      Philippe Gaubert
    • Journal Title

      Journal of Vacuum Science & Technology B 27

      Pages: 394-401

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analon Circuits2009

    • Author(s)
      Weitao Cheng
    • Journal Title

      Japanese Journal of Applied Physics 4

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1 / f Noise Tri-gate MOSFETs by Optimizing Device Structure2009

    • Author(s)
      Weitao Cheng
    • Journal Title

      Microelectronic Engineering 6(印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator2009

    • Author(s)
      Weitao Cheng
    • Journal Title

      Electrochemical Society Transactions 5(印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007

    • Author(s)
      W. Cheng, A. Teramoto, T. Ohmi
    • Journal Title

      Electrochemical Society Transactions Vol.11 No.6 ULSI Process Integration 5

      Pages: 349-354

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007

    • Author(s)
      W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
    • Journal Title

      Microelectronic Engineering Vol.84/9-10

      Pages: 2105-2108

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007

    • Author(s)
      R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
    • Journal Title

      ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13

      Pages: 113-118

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007

    • Author(s)
      W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
    • Journal Title

      ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13

      Pages: 101-106

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface2007

    • Author(s)
      Weitao Cheng
    • Journal Title

      Electrochemical Society Transactions 6

      Pages: 101-106

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007

    • Author(s)
      Rihito Kuroda
    • Journal Title

      Electrochemical Society Transactions 6

      Pages: 113-118

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007

    • Author(s)
      Weitao Cheng
    • Journal Title

      Microelectronic Engineering 84

      Pages: 2105-2108

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007

    • Author(s)
      Weitao Cheng
    • Journal Title

      Electrochemical Society Transactions 11

      Pages: 349-354

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si (100) and (110) Surfaces2008

    • Author(s)
      Weitao Cheng
    • Organizer
      PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2008-10-14
    • Related Report
      2008 Annual Research Report
  • [Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analog Circuits2008

    • Author(s)
      Weitao Cheng
    • Organizer
      2008 International Conference on SOLID STATE DEVICES AND MATERIALS
    • Place of Presentation
      つくば
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] Impact of Performance and Reliability Boosters in Novel FD-S0I CMOS Devices on Si(110) Surface for Analog Applications2008

    • Author(s)
      Weitao Cheng
    • Organizer
      29^<th> International Conference on the Physics of Semiconductors
    • Place of Presentation
      Brazil Rio de Vaneiro
    • Year and Date
      2008-07-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS trans istors fabricated on (110) and (100) silicon oriented wafers2008

    • Author(s)
      Philippe Gaubert
    • Organizer
      15^<th> Workshop on Dielectrics in Microelectronits
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2008-06-23
    • Related Report
      2008 Annual Research Report
  • [Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface2008

    • Author(s)
      Weitao Cheng
    • Organizer
      IEEE 39^<th> Annual Power Electronics Specialis is Conference
    • Place of Presentation
      Rhodes, Greece
    • Year and Date
      2008-06-18
    • Related Report
      2008 Annual Research Report
  • [Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface2008

    • Author(s)
      Weitao Cheng
    • Organizer
      213th Meeting of The Electrochemical Societ Y
    • Place of Presentation
      Phoenix, USA
    • Year and Date
      2008-05-20
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs2008

    • Author(s)
      Rihito Kuroda
    • Organizer
      2008 IEEE International Conference on Microelectronic Test Structures
    • Place of Presentation
      Edinburgh(イギリス)
    • Year and Date
      2008-03-26
    • Related Report
      2007 Annual Research Report
  • [Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces2008

    • Author(s)
      W. Cheng, A. Teramoto and T. Ohmi
    • Organizer
      PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts,Abs.1868 CD-ROM
    • Place of Presentation
      Honolulu, Hawaii
    • Related Report
      2008 Final Research Report
  • [Presentation] Impact of Fully Depleted Silicon-On-Insulator Accumulation-mode CMOS on Si (110)2008

    • Author(s)
      Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      IEICE Technical Report SDM 2008-149~168, SDM-164, pp.51-55
    • Related Report
      2008 Final Research Report
  • [Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits2008

    • Author(s)
      Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.876-877
    • Place of Presentation
      Tsukuba
    • Related Report
      2008 Final Research Report
  • [Presentation] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications2008

    • Author(s)
      Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, ChingFoa Tye, Syuichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      29th International Conference on the Physics of Semiconductors (ICPS 2008), pp602-603
    • Place of Presentation
      Brazil
    • Related Report
      2008 Final Research Report
  • [Presentation] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon oriented wafers2008

    • Author(s)
      P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, and T. Ohmi
    • Organizer
      15th Workshop on Dielectrics in Microelectronics, pp151-152
    • Place of Presentation
      Berlin
    • Related Report
      2008 Final Research Report
  • [Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface2008

    • Author(s)
      W. Cheng, A. Teramoto, T. Ohmi
    • Organizer
      2008 IEEE 39th Annual Power Electronics Specialists Conference, pp.3854-3856
    • Place of Presentation
      Rhodes
    • Related Report
      2008 Final Research Report
  • [Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface2008

    • Author(s)
      W. Cheng, A. Teramoto, T. Ohmi
    • Organizer
      213th Meeting of The Electrochemical Society, No.659, CD-ROM
    • Related Report
      2008 Final Research Report
  • [Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs2008

    • Author(s)
      Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      2008 IEEE International Conference on Microelectronic Test Structures, pp.155-159
    • Place of Presentation
      Edinburgh
    • Related Report
      2008 Final Research Report
  • [Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007

    • Author(s)
      Weitao Cheng
    • Organizer
      212th Meeting of The Electrochemical Society
    • Place of Presentation
      Washington D.C.(アメリカ)
    • Year and Date
      2007-10-10
    • Related Report
      2007 Annual Research Report
  • [Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si (100) and (110) Surfaces2007

    • Author(s)
      Weitao Cheng
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      Sendai
    • Year and Date
      2007-10-05
    • Related Report
      2007 Annual Research Report
  • [Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations2007

    • Author(s)
      Rihito Kuroda
    • Organizer
      2007 IEEE International SOI Conference
    • Place of Presentation
      Indian Wells(アメリカ)
    • Year and Date
      2007-10-02
    • Related Report
      2007 Annual Research Report
  • [Presentation] Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers2007

    • Author(s)
      Philippe Gaubert
    • Organizer
      19th International Conference on NOISE AND FLUCTUATIONS-ICNF 2007
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-09-11
    • Related Report
      2007 Annual Research Report
  • [Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007

    • Author(s)
      Weitao Cheng
    • Organizer
      15th Biennial Conference on Insulating Films on Semiconductors
    • Place of Presentation
      Athens(ギリシャ)
    • Year and Date
      2007-06-20
    • Related Report
      2007 Annual Research Report
  • [Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface2007

    • Author(s)
      Weitao Cheng
    • Organizer
      211th Meeting of The Electrochemical Society
    • Place of Presentation
      Chicago(アメリカ)
    • Year and Date
      2007-05-08
    • Related Report
      2007 Annual Research Report
  • [Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007

    • Author(s)
      Rihito Kuroda
    • Organizer
      211th Meeting of The Electrochemical Society
    • Place of Presentation
      Chicago(アメリカ)
    • Year and Date
      2007-05-08
    • Related Report
      2007 Annual Research Report
  • [Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations2007

    • Author(s)
      Rihito Kuroda, Akinobu Teramoto, Cheng Weitao, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      2007 IEEE International SOI Conference, pp.55-56
    • Place of Presentation
      Indian Wells, CA.
    • Related Report
      2008 Final Research Report
  • [Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node2007

    • Author(s)
      W. Cheng, A. Teramoto, T. Ohmi
    • Organizer
      212th Meeting of The Electrochemical Society, No.1309, CD-ROM
    • Related Report
      2008 Final Research Report
  • [Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110)Surfaces2007

    • Author(s)
      W. Cheng, A. Teramoto, R. Kuroda, C. Tye, T. Suwa, T Goto, F Imaizumi, S, Sugawa, T. Ohmi
    • Organizer
      IEICE Technical Report SDM 2007-187, pp.45-48
    • Related Report
      2008 Final Research Report
  • [Presentation] Impact of the channel direction on the 1/f noise in SOI - MOSFETs fabricated on (100) and (110) silicon oriented wafers2007

    • Author(s)
      P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi
    • Organizer
      AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007, pp.43-46
    • Place of Presentation
      Tokyo
    • Related Report
      2008 Final Research Report
  • [Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs2007

    • Author(s)
      W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
    • Organizer
      Infos2007 Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, pp.2105-2108
    • Related Report
      2008 Final Research Report
  • [Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage2007

    • Author(s)
      Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa, Tadahiro Ohmi
    • Organizer
      211th Meeting of The Electrochemical Society, No.719, CD-ROM
    • Related Report
      2008 Final Research Report
  • [Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface2007

    • Author(s)
      W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
    • Organizer
      211th Meeting of The Electrochemical Society, No.717, CD-ROM
    • Related Report
      2008 Final Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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