A Study on New Three-Dimensional Ultra High-Speed and Low-Loss Power Devices with Electric Field Effect Drift Layer

• Project/Area Number: 19686019
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 電力工学・電気機器工学
• Research Institution: Tohoku University
• Principal Investigator: CHENG Weitao Tohoku University, 未来科学技術共同研究センター, 助教授 (60431540)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000); Fiscal Year 2008: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2007: ¥22,620,000 (Direct Cost: ¥17,400,000、Indirect Cost: ¥5,220,000)
• Keywords: パワーデバイス / 電界効果ドリフト層 / 3次元構造 / コーナー丸め効果 / 平坦化

Research Abstract

本研究は、より環境にやさしい省エネルギー社会の実現に重要な役割をもつ高速かつ低損失パワーデバイスの実用を目指し、デバイス形成プロセスおよびパワーデバイスの構造そのものに着目し、チャンネル抵抗などオン抵抗を大幅に低減することに成功し、シリコン系でもワイドギャップ系でも応用可能な非常に高性能かつ低損失な新しい2次元および高集積度の3次元パワーデバイスを実現可能であることを実証した。

Research Products

• [Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1/f Noise Tri-gate MOSFETs by Optimizing Device Structure (2009)
  • Author(s): Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi
  • Journal Title: Microelectronic Engineering (to be published on June 2009)
  • Peer Reviewed
• [Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator (2009)
  • Author(s): WEITAO CHENG, AKINOBU TERAMOTO, TADAHIRO OHMI
  • Journal Title: Electrochemical Society Transactions (to be published on May 2009)
  • Peer Reviewed
• [Journal Article] A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits (2009)
  • Author(s): Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
  • Journal Title: Japanese Journal of Applied Physics Vol. 48
  • NAID: 210000066558
  • Peer Reviewed
• [Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • Author(s): Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
  • Journal Title: Journal of Vacuum Science & Technology B Vol.27, No.1 Pages: 394-401
  • Peer Reviewed
• [Journal Article] Different mechanism to explain the 1/f noise in n-and p-SOI MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • Author(s): Philippe Gaubert
  • Journal Title: Journal of Vacuum Science & Technology B 27 Pages: 394-401
  • Peer Reviewed
• [Journal Article] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analon Circuits (2009)
  • Author(s): Weitao Cheng
  • Journal Title: Japanese Journal of Applied Physics 4
  • Peer Reviewed
• [Journal Article] Experimental Demonstration and Analysis of High Performance and Low 1 / f Noise Tri-gate MOSFETs by Optimizing Device Structure (2009)
  • Author(s): Weitao Cheng
  • Journal Title: Microelectronic Engineering 6(印刷中)
  • Peer Reviewed
• [Journal Article] Impact of New Approach to Improve MOSFETs Performance with Ultrathin Gate Insulator (2009)
  • Author(s): Weitao Cheng
  • Journal Title: Electrochemical Society Transactions 5(印刷中)
  • Peer Reviewed
• [Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Journal Title: Electrochemical Society Transactions Vol.11 No.6 ULSI Process Integration 5 Pages: 349-354
  • Peer Reviewed
• [Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
  • Journal Title: Microelectronic Engineering Vol.84/9-10 Pages: 2105-2108
  • Peer Reviewed
• [Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa, T. Ohmi
  • Journal Title: ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13 Pages: 113-118
  • Peer Reviewed
• [Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface (2007)
  • Author(s): W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
  • Journal Title: ECS Transactions Vol.6 No.4 Silicon-on-Insulator Technology and Devices 13 Pages: 101-106
  • Peer Reviewed
• [Journal Article] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface (2007)
  • Author(s): Weitao Cheng
  • Journal Title: Electrochemical Society Transactions 6 Pages: 101-106
  • Peer Reviewed
• [Journal Article] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): Rihito Kuroda
  • Journal Title: Electrochemical Society Transactions 6 Pages: 113-118
  • Peer Reviewed
• [Journal Article] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): Weitao Cheng
  • Journal Title: Microelectronic Engineering 84 Pages: 2105-2108
  • Peer Reviewed
• [Journal Article] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): Weitao Cheng
  • Journal Title: Electrochemical Society Transactions 11 Pages: 349-354
  • Peer Reviewed
• [Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si (100) and (110) Surfaces (2008)
  • Author(s): Weitao Cheng
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE
  • Place of Presentation: Honolulu, USA
  • Year and Date: 2008-10-14
• [Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si (110) Using Accumulation Mode Device Structure for RF Analog Circuits (2008)
  • Author(s): Weitao Cheng
  • Organizer: 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: つくば
  • Year and Date: 2008-09-26
• [Presentation] Impact of Performance and Reliability Boosters in Novel FD-S0I CMOS Devices on Si(110) Surface for Analog Applications (2008)
  • Author(s): Weitao Cheng
  • Organizer: 29^<th> International Conference on the Physics of Semiconductors
  • Place of Presentation: Brazil Rio de Vaneiro
  • Year and Date: 2008-07-29
• [Presentation] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS trans istors fabricated on (110) and (100) silicon oriented wafers (2008)
  • Author(s): Philippe Gaubert
  • Organizer: 15^<th> Workshop on Dielectrics in Microelectronits
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2008-06-23
• [Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface (2008)
  • Author(s): Weitao Cheng
  • Organizer: IEEE 39^<th> Annual Power Electronics Specialis is Conference
  • Place of Presentation: Rhodes, Greece
  • Year and Date: 2008-06-18
• [Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface (2008)
  • Author(s): Weitao Cheng
  • Organizer: 213th Meeting of The Electrochemical Societ Y
  • Place of Presentation: Phoenix, USA
  • Year and Date: 2008-05-20
• [Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs (2008)
  • Author(s): Rihito Kuroda
  • Organizer: 2008 IEEE International Conference on Microelectronic Test Structures
  • Place of Presentation: Edinburgh(イギリス)
  • Year and Date: 2008-03-26
• [Presentation] Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces (2008)
  • Author(s): W. Cheng, A. Teramoto and T. Ohmi
  • Organizer: PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts,Abs.1868 CD-ROM
  • Place of Presentation: Honolulu, Hawaii
• [Presentation] Impact of Fully Depleted Silicon-On-Insulator Accumulation-mode CMOS on Si (110) (2008)
  • Author(s): Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: IEICE Technical Report SDM 2008-149~168, SDM-164, pp.51-55
• [Presentation] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits (2008)
  • Author(s): Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS, pp.876-877
  • Place of Presentation: Tsukuba
• [Presentation] Impact of Performance and Reliability Boosters in Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications (2008)
  • Author(s): Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, ChingFoa Tye, Syuichi Watabe, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: 29th International Conference on the Physics of Semiconductors (ICPS 2008), pp602-603
  • Place of Presentation: Brazil
• [Presentation] Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) silicon oriented wafers (2008)
  • Author(s): P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, and T. Ohmi
  • Organizer: 15th Workshop on Dielectrics in Microelectronics, pp151-152
  • Place of Presentation: Berlin
• [Presentation] A New Approach to Realize High Performance RF Power FETs on Si (110) Surface (2008)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: 2008 IEEE 39th Annual Power Electronics Specialists Conference, pp.3854-3856
  • Place of Presentation: Rhodes
• [Presentation] Impact of New Approach to Improve RF Power FETs Performance on Si (110) Surface (2008)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: 213th Meeting of The Electrochemical Society, No.659, CD-ROM
• [Presentation] Characterization of MOSFETs Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High Performance CMOS LSIs (2008)
  • Author(s): Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe, Ching Foa Tye, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: 2008 IEEE International Conference on Microelectronic Test Structures, pp.155-159
  • Place of Presentation: Edinburgh
• [Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): Weitao Cheng
  • Organizer: 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington D.C.(アメリカ)
  • Year and Date: 2007-10-10
• [Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si (100) and (110) Surfaces (2007)
  • Author(s): Weitao Cheng
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: Sendai
  • Year and Date: 2007-10-05
• [Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations (2007)
  • Author(s): Rihito Kuroda
  • Organizer: 2007 IEEE International SOI Conference
  • Place of Presentation: Indian Wells(アメリカ)
  • Year and Date: 2007-10-02
• [Presentation] Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers (2007)
  • Author(s): Philippe Gaubert
  • Organizer: 19th International Conference on NOISE AND FLUCTUATIONS-ICNF 2007
  • Place of Presentation: Tokyo
  • Year and Date: 2007-09-11
• [Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): Weitao Cheng
  • Organizer: 15th Biennial Conference on Insulating Films on Semiconductors
  • Place of Presentation: Athens(ギリシャ)
  • Year and Date: 2007-06-20
• [Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si (110) Surface (2007)
  • Author(s): Weitao Cheng
  • Organizer: 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago(アメリカ)
  • Year and Date: 2007-05-08
• [Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): Rihito Kuroda
  • Organizer: 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago(アメリカ)
  • Year and Date: 2007-05-08
• [Presentation] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations (2007)
  • Author(s): Rihito Kuroda, Akinobu Teramoto, Cheng Weitao, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: 2007 IEEE International SOI Conference, pp.55-56
  • Place of Presentation: Indian Wells, CA.
• [Presentation] Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node (2007)
  • Author(s): W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: 212th Meeting of The Electrochemical Society, No.1309, CD-ROM
• [Presentation] High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110)Surfaces (2007)
  • Author(s): W. Cheng, A. Teramoto, R. Kuroda, C. Tye, T. Suwa, T Goto, F Imaizumi, S, Sugawa, T. Ohmi
  • Organizer: IEICE Technical Report SDM 2007-187, pp.45-48
• [Presentation] Impact of the channel direction on the 1/f noise in SOI - MOSFETs fabricated on (100) and (110) silicon oriented wafers (2007)
  • Author(s): P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi
  • Organizer: AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007, pp.43-46
  • Place of Presentation: Tokyo
• [Presentation] High Performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs (2007)
  • Author(s): W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama, T.Ohmi
  • Organizer: Infos2007 Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, pp.2105-2108
• [Presentation] Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage (2007)
  • Author(s): Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa, Tadahiro Ohmi
  • Organizer: 211th Meeting of The Electrochemical Society, No.719, CD-ROM
• [Presentation] Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface (2007)
  • Author(s): W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi
  • Organizer: 211th Meeting of The Electrochemical Society, No.717, CD-ROM