Development of a deep-UV light-emitting device by a novel pulsed laser deposition technique
| Project/Area Number |
23656444
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Material processing/treatments
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2011 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
|---|
| Keywords | 薄膜プロセス / レーザー / パルスレーザー堆積法 / 深紫外発光素子 / フェムト秒パルスレーザー / 冷凍ターゲット |
|---|
| Research Abstract |
Fabrication of a high-quality boron nitride film for a deep-UV light-emitting diode by a novel pulsed laser deposition (PLD) technique combining high-intensity laser pulses with frozen target was investigated. A diamond-like carbon (DLC) film with high sp3 content was prepared by PLD using a frozen benzene target by a newly developed film formation system. Based on the results, a preparation technique of a high-quality boron nitride film for development of a deep-UV light-emitting diode was established.
|
Report
(2 results)
Research Products
(3 results)
