Electron Spin Control of Diamond by Surface Carrier and its Application to Nuclear Spin Detection of Bio-Molecules

• Project/Area Number: 26220903
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Waseda University
• Principal Investigator: KAWARADA Hiroshi 早稲田大学, 理工学術院, 教授 (90161380)
• Co-Investigator(Kenkyū-buntansha): 磯谷 順一 筑波大学, 図書館情報メディア系, 名誉教授 (60011756) ; 寺地 徳之 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (50332747) ; 小野田 忍 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主幹研究員(定常) (30414569) ; 蔭浦 泰資 早稲田大学, 理工学術院, 助手 (20801202) ; 稲葉 優文 早稲田大学, 理工学術院, 助手 (20732407)
• Project Period (FY): 2014-05-30 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥190,190,000 (Direct Cost: ¥146,300,000、Indirect Cost: ¥43,890,000); Fiscal Year 2018: ¥34,190,000 (Direct Cost: ¥26,300,000、Indirect Cost: ¥7,890,000); Fiscal Year 2017: ¥39,000,000 (Direct Cost: ¥30,000,000、Indirect Cost: ¥9,000,000); Fiscal Year 2016: ¥39,000,000 (Direct Cost: ¥30,000,000、Indirect Cost: ¥9,000,000); Fiscal Year 2015: ¥39,000,000 (Direct Cost: ¥30,000,000、Indirect Cost: ¥9,000,000); Fiscal Year 2014: ¥39,000,000 (Direct Cost: ¥30,000,000、Indirect Cost: ¥9,000,000)
• Keywords: ダイヤモンド / イオン注入 / スピン共鳴 / 生体分子 / NMR / NVセンター / MOSFET / ダイヤモンドデバイス / スピン共鳴測定

Outline of Final Research Achievements

We have established surface functionalization and surface device technology that stabilizes the state near the surface in which the nitrogen-vacancy (NV)centers in diamond are negatively charged (NV-). In particular, we developed a method for evaluating the stability of NV- and the method for stabilizing NV- at the nitrogen (N)-terminated surface using Rabi oscillation contrast. We found that the stabilization of shallow NV- when the biomolecule was directly covalently immobilized by the NH2 group on the N-terminated surface. The further increase of the coherence time T2 by the decoupling method (XY-8 method) enables 1H and 31P local nuclear magnetic resonance measurement at the diamond surface.

Academic Significance and Societal Importance of the Research Achievements

近年、10-20塩基(3-8nm)の短いDNAやRNAの挙動が注目され、メッセンジャーRNAとの結合によるRNA干渉を利用した医薬品やDNA/RNAによるアプタマセンサ等に利用されている。これらの短いDNAやRNAの2次構造変化、つまりコンフォメーション変化、例えばタンパク質とカップルする際の構造の動的変化は、分子生物学の重要テーマである。通常のNMRは集団的な生体分子の挙動で、個々分子の2次構造変化の測定手段はない。本研究の局所的なNMR観測の分解能がさらに向上すれば、分子生物学における貢献は大きい。

Assessment Rating

Verification Result (Rating)

A-

Research Products

• [Journal Article] Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) (2019)
  • Author(s): Kono Shozo、Kageura Taisuke、Hayashi Yuya、Ri Sung-Gi、Teraji Tokuyuki、Takeuchi Daisuke、Ogura Masahiko、Kodama Hideyuki、Sawabe Atsuhito、Inaba Masafumi、Hiraiwa Atsushi、Kawarada Hiroshi
  • Journal Title: Diamond and Related Materials Volume: 93 Pages: 105-130
  • DOI: 10.1016/j.diamond.2019.01.017
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] 3.8 W/mm power density for ALD Al2 O 3 -based two-dimensional hole gas diamond MOSFET operating at saturation velocity (2019)
  • Author(s): S. Imanishi, K. Horikawa, N. Oi, S. Okubo, T. Kageura, A. Hiraiwa, H. Kawarada
  • Journal Title: IEEE Electron Device Letters Volume: 40 Issue: 2 Pages: 279-282
  • DOI: 10.1109/led.2018.2886596
  • Peer Reviewed / Open Access
• [Journal Article] Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers (2019)
  • Author(s): S. Kawai, H. Yamano, T. Sonoda, K. Kato, J. Buendia, T. Kageura, R. Fukuda, T. Okada, T. Tanii, T. Higuchi, M. Haruyama, K. Yamada, S. Onoda, T. Ohshima, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
  • Journal Title: J. Phys. Chem. C Volume: 123 Issue: 6 Pages: 3594-3604
  • DOI: 10.1021/acs.jpcc.8b11274
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Photoelectrical Imaging and coherent-state readout of single nitrogen-vacancy centers in diamond (2019)
  • Author(s): Petr Siyushev, Milos Nesladek, Emilie Bourgeois, Michal Gulka, TakashiYamamoto, Michael Trupke, Tokuyuki Teraji, Junichi Isoya and Fedor Jelezko
  • Journal Title: Science Volume: 363 Issue: 6428 Pages: 728-731
  • DOI: 10.1126/science.aav2789
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] High-resolution spectroscopy of single nuclear spins via sequential weak measurements (2019)
  • Author(s): Matthias Pfender, Ping Wang, Hitoshi Sumiya, Shinobu Onoda, Wen Yang, Durga Bhaktavatsala Rao Dasari, Philipp Neumann, Xin-Yu Pan, Junichi Isoya, Ren-Bao Liu, Joerg. Wrachtrup
  • Journal Title: Nat. Commun. Volume: 10 Issue: 1
  • DOI: 10.1038/s41467-019-08544-z
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Probing quantum thermalization of a disordered dipolar spin ensemble with discrete time-crystalline order (2019)
  • Author(s): Joonhee Choi, Hengyun Zhou, Soonwon Choi, Renate Landig, Wen Wei Ho, Junichi Isoya, Fedor Jelezko, Shinobu Onoda, Hitoshi Sumiya, Dmitry A. Abanin, Mikhail D. Lukin
  • Journal Title: Physical Review Letters Volume: 122 Issue: 4 Pages: 043603-043603
  • DOI: 10.1103/physrevlett.122.043603
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Apparent delocalization of the current density in metallic wires observed with diamond nitrogen-vacancy magnetometry (2019)
  • Author(s): J-P. Tetienne, N. Dontschuk, D.A. Broadway, S.E. Lillie, T. Teraji, D.A Simpson, A Stacey, L.C.L. Hollenberg
  • Journal Title: Physical Review B Volume: 99 Issue: 1 Pages: 0144361-27
  • DOI: 10.1103/physrevb.99.014436
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Isotopic effects on phonons and excitons in diamond studied by deep-ultraviolet continuous-wave photoluminescence spectroscopy (2019)
  • Author(s): R. Ishii, S. Shikata, T. Teraji, H. Kanda, H. Watanabe, M. Funato, and Y. Kawakami
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: 1 Pages: 010904-010904
  • DOI: 10.7567/1347-4065/aaef3e
  • NAID: 210000135251
  • Peer Reviewed
• [Journal Article] Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond (2018)
  • Author(s): D. L. Creedon, Y. Jiang, K. Ganesan, A. Stacey, T. Kageura, H. Kawarada, J. C. McCallum, B. C. Johnson, S. Prawer, D. N. Jamieson
  • Journal Title: Physical Review Applied Volume: 10 Issue: 4
  • DOI: 10.1103/physrevapplied.10.044016
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films (2018)
  • Author(s): T. Kageura, M. Hideko, I. Tsuyuzaki, S. Amano, A. Morishita, T. Yamaguchi, Y. Takano, H. Kawarada
  • Journal Title: Diamond and Related Materials Volume: 90 Pages: 181-187
  • DOI: 10.1016/j.diamond.2018.10.013
  • Peer Reviewed
• [Journal Article] Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing (2018)
  • Author(s): Fukuda Ryosuke、Balasubramanian Priyadharshini、Higashimata Itaru、Koike Godai、Okada Takuma、Kagami Risa、Teraji Tokuyuki、Onoda Shinobu、Haruyama Moriyoshi、Yamada Keisuke、Inaba Masafumi、Yamano Hayate、Jelezko Fedor、Tanii Takashi、Isoya Junichi et al.
  • Journal Title: New Journal of Physics Volume: 20 Issue: 8 Pages: 083029-083029
  • DOI: 10.1088/1367-2630/aad997
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing (2018)
  • Author(s): Falina Shaili、Kawai Sora、Oi Nobutaka、Yamano Hayate、Kageura Taisuke、Suaebah Evi、Inaba Masafumi、Shintani Yukihiro、Syamsul Mohd、Kawarada Hiroshi
  • Journal Title: Sensors Volume: 18 Issue: 7 Pages: 2178-2178
  • DOI: 10.3390/s18072178
  • Peer Reviewed
• [Journal Article] Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors (2018)
  • Author(s): Oi Nobutaka、Inaba Masafumi、Okubo Satoshi、Tsuyuzaki Ikuto、Kageura Taisuke、Onoda Shinobu、Hiraiwa Atsushi、Kawarada Hiroshi
  • Journal Title: Scientific Reports Volume: 8 Issue: 1
  • DOI: 10.1038/s41598-018-28837-5
  • Peer Reviewed / Open Access
• [Journal Article] Superradiant emission from colour centres in diamond (2018)
  • Author(s): Andreas Angerer, Kirill Streltsov, Thomas Astner, Stefan Putz, Hitoshi Sumiya, Shinobu Onoda, Junichi Isoya, William J. Munro, Kae Nemoto, Jorg Schmiedmayer & Johannes Majer
  • Journal Title: Nature Physics Volume: 14 Issue: 12 Pages: 1168-1172
  • DOI: 10.1038/s41567-018-0269-7
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Precise measurements of diamond lattice constant using Bond method (2018)
  • Author(s): S. Shikata, T. Tanno, T. Teraji, H. Kanda, T. Yamada and J. Kushibiki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 57 Issue: 11 Pages: 1113011-5
  • DOI: 10.7567/jjap.57.111301
  • NAID: 210000149753
  • Peer Reviewed
• [Journal Article] Proximity-induced artefacts in magnetic imaging with nitrogen-vacancy ensembles in diamond (2018)
  • Author(s): J-P Tetienne, D. Broadway, S. Lillie, N. Dontschuk, T. Teraji, L. Hall, A. Stacey, D. Simpson, LC.L. Hollenberg
  • Journal Title: Sensors Volume: 18 Issue: 4 Pages: 12901-12
  • DOI: 10.3390/s18041290
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond (2018)
  • Author(s): Tetienne J.-P.、de Gille R. W.、Broadway D. A.、Teraji T.、Lillie S. E.、McCoey J. M.、Dontschuk N.、Hall L. T.、Stacey A.、Simpson D. A.、Hollenberg L. C. L.
  • Journal Title: Physical Review B Volume: 97 Issue: 8 Pages: 0854021-11
  • DOI: 10.1103/physrevb.97.085402
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Heteroepitaxial diamond field-effect transistor for high voltage applications (2018)
  • Author(s): 2.Mohd Syamsul, N. Oi, S. Okubo, T. Kageura, H. Kawarada
  • Journal Title: IEEE Electron Device Letters Volume: 39 Issue: 1 Pages: 51-54
  • DOI: 10.1109/led.2017.2774290
  • Peer Reviewed / Open Access
• [Journal Article] NV-センタの構造・物理・SiV-センタとの比較 (2018)
  • Author(s): 磯谷順一, 寺地徳之, 小野田忍
  • Journal Title: NEW DIAMOND Volume: 128 Pages: 14-22
• [Journal Article] Solid-state electron spin lifetime limited by phononic vacuum modes (2018)
  • Author(s): Astner T.、Gugler J.、Angerer A.、Wald S.、Putz S.、Mauser N. J.、Trupke M.、Sumiya H.、Onoda S.、Isoya J.、Schmiedmayer J.、Mohn P.、Majer J.
  • Journal Title: Nature Materials Volume: 17 Issue: 4 Pages: 313-317
  • DOI: 10.1038/s41563-017-0008-y
  • Peer Reviewed / Open Access
• [Journal Article] Sheet resistance underneath the Au ohmic-electrode on hydrogen-terminated surface-conductive diamond (001) (2017)
  • Author(s): S.Kono, T.Sasaki, M.Inaba, A.Hiraiwa, H.Kawarada
  • Journal Title: Diamond and Related Materials Volume: 80 Pages: 93-98
  • DOI: 10.1016/j.diamond.2017.09.020
  • Peer Reviewed
• [Journal Article] Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing (2017)
  • Author(s): M. Inaba, A. Seki, K. Sato, T. Kushida, T.Kageura, H. Yamano, A. Hiraiwa, H.Kawarada
  • Journal Title: physica status solidi (b) Volume: 254 Issue: 9 Pages: 1700040-1700040
  • DOI: 10.1002/pssb.201700040
  • Peer Reviewed
• [Journal Article] Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond (2017)
  • Author(s): 8.T. Kageura, K. Kato, H. Yamano, E. Suaebah, M. Kajiya, S. Kawai, M. Inaba, T. Tanii, M. Haruyama, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, S. Kono, and H. Kawarada
  • Journal Title: Appl.Phys.Express Volume: 10
  • NAID: 210000135854
  • Peer Reviewed / Open Access
• [Journal Article] ボロンドープダイヤモンド超伝導量子干渉計の作製と特性評価 (2017)
  • Author(s): 17.露崎 活人，蔭浦 泰資，日出幸 昌邦，川原田 洋、笹間 陽介，山口 尚秀，高野 義彦，立木 実，大井 修一，平田 和人，有沢 俊一
  • Journal Title: NEW DIAMOND Volume: 126 Pages: 13-18
• [Journal Article] 表面酸化処理によるダイヤモンド中の浅いNVセンタの電荷状態安定化 (2017)
  • Author(s): 山野 颯，川原田 洋，小野田 忍，寺地 徳之
  • Journal Title: NEW DIAMOND Volume: 125 Pages: 27-31
• [Journal Article] Plasma etching phenomena in heavily boron-doped diamond growth (2017)
  • Author(s): Fiori Alexandre、Teraji Tokuyuki
  • Journal Title: Diamond Relat. Mater. Volume: 76 Pages: 38-43
  • DOI: 10.1016/j.diamond.2017.04.007
  • Peer Reviewed
• [Journal Article] (Invited) Ultrapure Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition (2017)
  • Author(s): Teraji Tokuyuki
  • Journal Title: ECS Transactions Volume: 80 Issue: 4 Pages: 271-276
  • DOI: 10.1149/08004.0271ecst
  • Peer Reviewed
• [Journal Article] Mechanism of reverse current increase of vertical-type diamond Schottky diodes (2017)
  • Author(s): Teraji T.、Fiori A.、Kiritani N.、Tanimoto S.、Gheeraert E.、Koide Y.
  • Journal Title: Journal of Applied Physics Volume: 122 Issue: 13 Pages: 135304-135304
  • DOI: 10.1063/1.4994570
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Reducing energy dissipation and surface effect of diamond nanoelectromechanical resonators by annealing in oxygen ambient (2017)
  • Author(s): Wu Haihua、Sang Liwen、Teraji Tokuyuki、Li Tiefu、Wu Kongping、Imura Masataka、You Jianqiang、Koide Yasuo、Liao Meiyong
  • Journal Title: Carbon Volume: 124 Pages: 281-287
  • DOI: 10.1016/j.carbon.2017.08.069
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes (2017)
  • Author(s): Shimaoka Takehiro、Teraji Tokuyuki、Watanabe Kenji、Koizumi Satoshi
  • Journal Title: physica status solidi (a) Volume: 214 Issue: 11 Pages: 1700180-1700180
  • DOI: 10.1002/pssa.201700180
  • Peer Reviewed
• [Journal Article] Nonvolatile nuclear spin memory enables sensor-unlimited nanoscale spectroscopy of small spin clusters (2017)
  • Author(s): Pfender Matthias、Aslam Nabeel、Sumiya Hitoshi、Onoda Shinobu、Neumann Philipp、Isoya Junichi、Meriles Carlos A.、Wrachtrup J?rg
  • Journal Title: Nature Communications Volume: 8 Issue: 1
  • DOI: 10.1038/s41467-017-00964-z
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Diffusion of Vacancies Created by High-Energy Heavy Ion Strike Into Diamond (2017)
  • Author(s): Onoda Shinobu、Tatsumi Kazumasa、Haruyama Moriyoshi、Teraji Tokuyuki、Isoya Junichi、Kada Wataru、Ohshima Takeshi、Hanaizumi Osamu
  • Journal Title: physica status solidi (a) Volume: 214 Issue: 11 Pages: 1700160-1700160
  • DOI: 10.1002/pssa.201700160
  • Peer Reviewed
• [Journal Article] Nanoscale nuclear magnetic resonance with chemical resolution (2017)
  • Author(s): Aslam Nabeel、Pfender Matthias、Neumann Philipp、Reuter Rolf、Zappe Andrea、F?varo de Oliveira Felipe、Denisenko Andrej、Sumiya Hitoshi、Onoda Shinobu、Isoya Junichi、Wrachtrup J?rg
  • Journal Title: Science Volume: 357 Issue: 6346 Pages: 67-71
  • DOI: 10.1126/science.aam8697
  • Peer Reviewed / Open Access
• [Journal Article] Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond (2017)
  • Author(s): T. Kageura, K. Kato, H. Yamano, E. Suaebah, M. Kajiya, S. Kawai, M. Inaba, T. Tanii, M. Haruyama, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, S. Kono, and H. Kawarada
  • Journal Title: Appl.Phys.Express Volume: 10 Issue: 5 Pages: 0555031-4
  • DOI: 10.7567/apex.10.055503
  • NAID: 210000135854
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] High voltage stress induced in transparent polycrystalline diamond field-effect transistor and enhanced endurance using thick Al2O3 passivation layer (2017)
  • Author(s): M. Syamsul, Y. Kitabayashi, T. Kudo, D. Matsumura, H. Kawarada
  • Journal Title: IEEE Electron Device Lett. Volume: 38 Issue: 5 Pages: 607-610
  • DOI: 10.1109/led.2017.2685081
  • Peer Reviewed
• [Journal Article] Normally-off C-H Diamond MOSFETs with Partial C-O Channel Achieving 2-kV Breakdown Voltage (2017)
  • Author(s): Y. Kitabayashi, T. Kudo, H. Tsuboi, T. Yamada, D. Xu, M. Shibata, D. Matsumura, Y. Hayashi, M. Syamsul, M. Inaba, A. Hiraiwa and H. Kawarada
  • Journal Title: IEEE Electron Device Lett. Volume: 38 Issue: 3 Pages: 363-366
  • DOI: 10.1109/led.2017.2661340
  • Peer Reviewed
• [Journal Article] Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications (2017)
  • Author(s): H. Kawarada, T. Yamada , Dechen Xu , H. Tsuboi , Y. Kitabayashi , D. Matsumura , M. Shibata , T. Kudo , M. Inaba , A. Hiraiwa
  • Journal Title: Scientific Reports Volume: 7 Issue: 1
  • DOI: 10.1038/srep42368
  • Peer Reviewed / Open Access
• [Journal Article] Aptamer strategy for ATP detection on nanocrystalline diamond functionalized by a nitrogen and hydrogen radical beam system (2017)
  • Author(s): E. Suaebah, Y. Seshimo, M. Shibata, S. Kono, M. Hasegawa, and H. Kawarada
  • Journal Title: J. Appl. Phys. Volume: 121 Issue: 4 Pages: 044506-044506
  • DOI: 10.1063/1.4974984
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Atomic composition of WC/and Zr/O-terminated diamond Schottky interfaces close to ideality (2017)
  • Author(s): J.C. Pinero, D. Araujo, A. Fiori, A. Traore, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji
  • Journal Title: Appl. Surf. Sci. Volume: 395 Pages: 200-207
  • DOI: 10.1016/j.apsusc.2016.04.166
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Homoepitaxial diamond chemical vapor deposition for ultra-light doping (2016)
  • Author(s): T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide
  • Journal Title: Materials Science Semiconductor Processing Volume: ー Pages: 197-202
  • DOI: 10.1016/j.mssp.2016.11.012
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond (2016)
  • Author(s): T. Yamaguchi, Y. Sasama, M. Tanaka, H. Takeya, Y. Takano, T. Kageura, and H. Kawarada
  • Journal Title: Phys. Rev. B Volume: 94 Issue: 16
  • DOI: 10.1103/physrevb.94.161301
  • Peer Reviewed
• [Journal Article] High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor (2016)
  • Author(s): M. Syamsul, Y. Kitabayashi, D. Matsumura, T. Saito, Y. Shintani, H. Kawarada
  • Journal Title: Applied Physics Letters Volume: 109 Issue: 20
  • DOI: 10.1063/1.4967999
  • Peer Reviewed
• [Journal Article] Polycrystalline boron-doped diamond with an oxygen-terminated surface channel as an electrolyte-solution-gate field-effect transistor for pH sensing (2016)
  • Author(s): Y. Shintani, S. Ibori, K. Igarashi, T. Naramura, M. Inaba, H. Kawarada
  • Journal Title: Electrochimica Acta Volume: 212 Pages: 10-15
  • DOI: 10.1016/j.electacta.2016.06.104
  • Peer Reviewed
• [Journal Article] Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage (2016)
  • Author(s): H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo,M. Inaba, A. Hiraiwa
  • Journal Title: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Volume: 28 Pages: 483-486
  • DOI: 10.1109/ispsd.2016.7520883
  • Peer Reviewed
• [Journal Article] Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate (2016)
  • Author(s): M. Inaba, T. Muta M. Kobayashi, T. Saito, M. Shibata, D. Matsumura, T. Kudo, A. Hiraiwa and H. Kawarada,
  • Journal Title: Appl. Phys. Lett. Volume: 109 Issue: 3
  • DOI: 10.1063/1.4958889
  • Peer Reviewed
• [Journal Article] Optically induced dynamic nuclear spin polarization in diamond (2016)
  • Author(s): J. Scheuer, I. Schwartz, Q. Chen, D. Schulze-Suenninghausen, P. Carl, P. Hoefer, A. Retzker, H. Sumiya, J. Isoya, B. Luy, M. B. Plenio, B. Naydenov and F. Jelezko
  • Journal Title: New J. Phys. Volume: 18 Issue: 1 Pages: 013040-013040
  • DOI: 10.1088/1367-2630/18/1/013040
  • Peer Reviewed / Open Access
• [Journal Article] Competition between electric field and magnetic field noise in the decoherence of a single spin in diamond (2016)
  • Author(s): P. Jamonneau, M. Lesik, J. P. Tetienne, I. Alvizu, L. Mayer, A. Dreau, S. Kosen, J.-F. Roch, S. Pezzagna, J. Meijer, T. Teraji, Y. Kubo, P. Bertet, J. R. Maze, and V. Jacques
  • Journal Title: Phys. Rev. B Volume: 93 Issue: 2 Pages: 0243051-5
  • DOI: 10.1103/physrevb.93.024305
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] 超高純度ダイヤモンド気相成長 スピントロニクス研究の新たな礎 (2016)
  • Author(s): 寺地徳之
  • Journal Title: 応用物理 Volume: 85 Pages: 870-874
  • NAID: 130007715238
  • Peer Reviewed
• [Journal Article] Space-charge-controlled field emission model of current conduction through Al2O3 films (2016)
  • Author(s): A. Hiraiwa, D. Matsumura, H. Kawarada
  • Journal Title: Journal of Applied Physics Volume: 119 Issue: 6
  • DOI: 10.1063/1.4941547
  • Peer Reviewed
• [Journal Article] Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films (2015)
  • Author(s): A. Hiraiwa, T. Saito,D. Matsumura, H. Kawarada
  • Journal Title: Journal of Applied Physics Volume: 117 Issue: 21
  • DOI: 10.1063/1.4921824
  • Peer Reviewed
• [Journal Article] New application of NV centers in CVD diamonds as a fluorescent nuclear track detector (2015)
  • Author(s): Shinobu Onoda, Moriyoshi Haruyama, Tokuyuki Teraji, Junichi Isoya, Wataru Kada, Osamu Hanaizumi, Takeshi Ohshima
  • Journal Title: Physica Status Solidi A Volume: 212 Issue: 11 Pages: 2641-2644
  • DOI: 10.1002/pssa.201532219
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] High-quality and high-purity homoepitaxial diamond (100) film growth under high oxygen concentration condition (2015)
  • Author(s): T. Teraji
  • Journal Title: J. Appl. Phys. Volume: 118 Issue: 11 Pages: 1153041-8
  • DOI: 10.1063/1.4929962
  • Peer Reviewed
• [Journal Article] Homoepitaxial diamond film growth: High purity, high crystalline quality,isotopic enrichment, and single color center formation (2015)
  • Author(s): Tokuyuki Teraji, Takashi Yamamoto, Kenji Watanabe, Yasuo Koide, Junichi Isoya, Shinobu Onoda, Takeshi Ohshima, Lachlan J. Rogers, Fedor Jelezko, Philipp Neumann
  • Journal Title: Phys. Status Solidi A Volume: 212 Issue: 11 Pages: 2365-2384
  • DOI: 10.1002/pssa.201532449
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Repulsive effects of hydrophobic diamond thin films on biomolecule detection (2015)
  • Author(s): A.Rahim Ruslinda, Y. Ishiyama, V. Penmatsa, S. Ibori, H. Kawarada
  • Journal Title: Applied Surface Science Volume: 328 Pages: 314-318
  • DOI: 10.1016/j.apsusc.2014.12.011
  • Peer Reviewed
• [Journal Article] Signature of high T c above 25 K in high quality superconducting diamond (2015)
  • Author(s): H. Okazaki, T. Wakita, T. Muro, T. Nakamura, Y. Muraoka, T. Yokoya, S. Kurihara, H. Kawarada, T. Oguchi, Y. Takano
  • Journal Title: Applied Physics Letters Volume: 106(5) Issue: 5
  • DOI: 10.1063/1.4907411
  • Peer Reviewed
• [Journal Article] Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging (2014)
  • Author(s): J. Alvarez, M. Boutchich, J. P. Kleider, T. Teraji and Y. Koide
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 47 Issue: 35 Pages: 3551021-10
  • DOI: 10.1088/0022-3727/47/35/355102
  • Peer Reviewed
• [Presentation] 相補型高周波増幅器応用に向けた(111)ダイヤモンドMOSFETsの高周波特性評価 (2019)
  • Author(s): 久樂 顕, 今西 祥一朗, 大井 信敬, 大久保 智, 堀川 清貴, 蔭浦 泰資, 平岩 篤, 川原田 洋
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 高被覆率窒素終端(111)ダイヤモンドの作製 (2019)
  • Author(s): 立石 哲也, 薗田 隆弘, 河合 空, 山野 颯, Jorge J. Buendia, 蔭浦 泰資, 石井 邑, 永岡 希朗, 福田 諒介, 谷井 孝至, 春山 盛善, 山田 圭介, 小野田 忍, 加田 渉, 花泉 修, Alastair Stacey, 神田 一浩, 上村 雅治, 寺地 徳之, 磯谷 順一, 河野 省三, 川原田 洋
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 縦型2DHGダイヤモンドMOSFET ; ゲート幅10 mmでの大電流動作(~1 A)の達成 (2019)
  • Author(s): 西村 隼, 大井 信敬, 岩瀧 雅幸, 露崎 活人, 大久保 智, 蔭浦 泰資, 平岩 篤, 川原田 洋
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 液体ヘリウム温度以上で動作可能なボロンドープダイヤモンド超伝導量子干渉計 (2019)
  • Author(s): 森下 葵，蔭浦 泰資，露崎 活人，天野 勝太郎，高野 義彦，立木 実, 大井 修一，有沢 俊一，川原田 洋
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] MBEによるダイヤモンド(111)基板上の電気伝導性AlGaN薄膜の成長 (2019)
  • Author(s): 河野省三，蔭浦泰資，河合空，Jorge J. Buendia，矢部太一, 川原田洋
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 高感度かつ堅牢な単結晶ダイヤモンド超伝導量子干渉計 (2019)
  • Author(s): 蔭浦泰資、露崎活人、天野勝太郎、森下葵、笹川崇男、川原田洋
  • Organizer: 学際・国際的高度人材育成ライフイノベーションマテリアル創製 共同研究プロジェクト（６大学連携プロジェクト）第３回公開討論会
• [Presentation] Single crystal diamond site-selective growth by remote plasma chemical vapor deposition (2019)
  • Author(s): 費文茜, 稲葉優文, 星野晴華, 露崎活人, 河合空, 岩瀧雅幸, 川原田洋
  • Organizer: 学際・国際的高度人材育成ライフイノベーションマテリアル創製 共同研究プロジェクト（６大学連携プロジェクト）第３回公開討論会
• [Presentation] Nitrogen Terminated Diamond SGFET for pH Sensing in Acidic and Alkaline pH Solutions (2019)
  • Author(s): Chang Yu Hao, Shaili Falina, 河合空, Mohd Syamsul, 井山 裕太郎, 新谷幸弘, 川原田洋
  • Organizer: 学際・国際的高度人材育成ライフイノベーションマテリアル創製 共同研究プロジェクト（６大学連携プロジェクト）第３回公開討論会
• [Presentation] Diamond Josephson Junctions and SQUID for Superconducting Q-bit (2019)
  • Author(s): 蔭浦泰資、露崎活人、天野勝太郎、森下葵、立木実、大井修一、有沢俊一、高野義彦、川原田洋
  • Organizer: 東北大学電気通信研究所－早稲田大学ナノ・ライフ創新研究機構, 共同プロジェクト研究(ナノエレクトロニクスに関する連携研究) 平成30年度研究会
• [Presentation] ALD-Al2O3ダイヤモンドMOSFETsの高電圧印加時における高周波特性評価 (2019)
  • Author(s): 今西 祥一朗, 大井 信敬, 工藤 拓也, 大久保 智, 堀川 清貴, 平岩 篤, 川原田 洋
  • Organizer: 東北大学電気通信研究所－早稲田大学ナノ・ライフ創新研究機構, 共同プロジェクト研究(ナノエレクトロニクスに関する連携研究) 平成30年度研究会
• [Presentation] 縦型2DHGダイヤモンドMOSFET : オーバーラップゲート構造による大電流密度・低オン抵抗化 (Vertical-Type 2DHG Diamond MOSFET : High Current Density and Low On-resistance with Overlapping Gate Electrode) (2019)
  • Author(s): 西村 隼，岩瀧 雅幸，大井 信敬，堀川 清貴, 天野 勝太郎, 蔭浦 泰資, 平岩 篤，川原田 洋
  • Organizer: 東北大学電気通信研究所－早稲田大学ナノ・ライフ創新研究機構, 共同プロジェクト研究(ナノエレクトロニクスに関する連携研究) 平成30年度研究会
• [Presentation] 相補型パワー高周波回路に向けたダイヤモンド p-FET (2019)
  • Author(s): 川原田 洋
  • Organizer: 東北大学電気通信研究所－早稲田大学ナノ・ライフ創新研究機構, 共同プロジェクト研究(ナノエレクトロニクスに関する連携研究) 平成30年度研究会
• [Presentation] Fabrication of color centers for quantum applications from singles to ensemble in HPHT single crystal diamond (2019)
  • Author(s): J. Isoya
  • Organizer: Hasselt Diamond Workshop 2019 SBDD XXIV
  • Int'l Joint Research / Invited
• [Presentation] Implantation of nitrogen compound ion beam for fabricating coupled triple NV centres (2019)
  • Author(s): Shinobu Onoda, Moriyoshi Haruyama, Taisei Higuchi, Wataru Kada, Atsuya Chiba, Yoshimi Hirano, T. Teraji, Ryuji Igarashi, S. Kawai, H. Kawarada, Yu Ishii, Ryosuke Fukuda, T. Tanii, J. Isoya, Takeshi Ohshima, O. Hanaizumi
  • Organizer: Hasselt Diamond Workshop 2019 SBDD XXIV
  • Int'l Joint Research
• [Presentation] C5N4Hnイオン注入による双極子結合したNVセンターの形成 (2019)
  • Author(s): 春山 盛善, 小野田 忍, 樋口 泰成, 加田 渉, 千葉 敦也, 平野 貴美, 寺地 徳之, 五十嵐 龍治, 河合 空, 川原田 洋, 石井 邑, 福田 諒介, 谷井 孝至, 磯谷 順一, 大島 武, 花泉 修
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] イオン注入による単一不純物欠陥の規則的配列形成とその応用 －ダイヤモンド中浅い単一 NV センターの配列形成－ (2019)
  • Author(s): 谷井 孝至, 品田 高宏, 寺地 徳之, 小野田 忍, 大島 武, Liam P. McGuinness, Fedor Jelezko, Yan Liu, E Wu, 加田 渉, 花泉 修, 川原田 洋, 磯谷 順一
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] ダイヤモンド中単一NVセンターのパルス光磁気共鳴測定のためのローエンドFPGAへのフォトンカウンタの実装 (2019)
  • Author(s): 永岡 希朗, 畑 雄貴, 川勝 一斗, 石井 邑, 福田 諒介, 寺地 徳之, 小野田 忍, 大島 武, 品田 高宏, 川原田 洋, 磯谷 順一, 谷井 孝至
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] High Frequency, High Voltage and Vertical Diamond MOSFETs Using Two-Dimensional Hole Gas (2018)
  • Author(s): H. Kawarada, N. Oi, , S. Imanishi, M. Iwataki and A. Hiraiwa
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research / Invited
• [Presentation] Normally-Off 2DHG Diamond Al2O3/SiO2 MOSFETs without Deteriorating Drain Current Density (2018)
  • Author(s): T. Yabe, N. Oi, K. Horikawa, S. Okubo, J. J. Buendia, T. Kageura, S. Kono, A. Hiraiwa, H. Kawarada
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] 3.8 W/mm Power Density at 1GHz for ALD-Al2O3 2DHG Diamond High Frequency MOSFETs (2018)
  • Author(s): S. Imanishi, N. Oi, S. Okubo, K. Horikawa, T. Kageura, A. Hiraiwa, H. Kawarada
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] 1H NMR Detection on Nitrogen Terminated Diamond by Shallow Nitrogen Vacancy Centers (2018)
  • Author(s): T. Sonoda, S. Kawai, H. Yamano, J. Buendia, T. Kageura, Y. Ishii, K. Nagaoka, R. Fukuda, T. Tanii, M. Haruyama, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, K. Kanda, M. Uemura, T. Teraji, J. Isoya, S. Kono, H. Kawarada
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Superconducting Boron-doped Diamond Josephson Junction Operating up to 7.0K (2018)
  • Author(s): S. Amano, T. Kageura, I. Tsuyuzaki, M. Tachiki, S. Ooi, S. Arisawa, Y. Takano, H. Kawarada
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Vertical-Type 2DHG Diamond MOSFETs Over 5000 A/cm2 and Low On-Resistance 6 mΩcm2 (2018)
  • Author(s): M. Iwataki, N. Oi, K. Horikawa, S. Amano, T. Kageura, M. Inaba, A. Hiraiwa, H. Kawarada
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Nitrogen and Oxygen-Terminated Diamond Electrolyte Solution-Gate FET for pH Sensing in Both Acidic and Alkaline Solution (2018)
  • Author(s): Y. Chang, S. Falina, S. Kawai, M. Syamsul, Y. Iyama, Y. Shintani, H. Kawarada
  • Organizer: 2018 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Superconductivity in fine patterned single crystalline boron-doped diamond films (2018)
  • Author(s): T. Kageura, I. Tsuyuzaki, S. Amano, A. Morishita, T. Sasagawa, H. Kawarada
  • Organizer: The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
  • Int'l Joint Research
• [Presentation] Vertical diamond FETs with high current density and low on-resistance (2018)
  • Author(s): N. Oi, M. Iwataki, J. Nishimura, A. Hiraiwa, H. Kawarada
  • Organizer: The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
  • Int'l Joint Research
• [Presentation] Nanoscale NMR detection using shallow NV center in nitrogen-terminated diamond (2018)
  • Author(s): S. Kawai, T. Sonoda, T. Kageura, H. Kawarada
  • Organizer: The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
  • Int'l Joint Research
• [Presentation] Exploring the potential of heteroepitaxial diamond as field effect transistor (2018)
  • Author(s): M. Syamsul and H. Kawarada
  • Organizer: 2018 E-MRS Fall Meeting & Exhibit
  • Int'l Joint Research / Invited
• [Presentation] RF Performance of ALD-Al2O3 2DHG Diamond MOSFETs at High Voltage Operation for High Output Power (2018)
  • Author(s): S. Imanishi, N. Oi, S. Okubo, K. Horikawa, T. Kageura, A. Hiraiwa, H. Kawarada
  • Organizer: 2018 International Conference on Solid State Devices and Materials(SSDM2018)
  • Int'l Joint Research
• [Presentation] Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2K (2018)
  • Author(s): S. Amano, T. Kageura, I. Tsuyuzaki, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Osato, D. Tsuya, Y. Takano, H. Kawarada
  • Organizer: 2018 International Conference on Solid State Devices and Materials(SSDM2018)
  • Int'l Joint Research
• [Presentation] Properties of Shallow Nitrogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance (2018)
  • Author(s): T. Sonoda, S. Kawai, H. Yamano, K. Kato, J. J. Buendia, T. Kageura,Y. Ishii, K. Nagaoka, R. Fukuda, T. Okada, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
  • Organizer: 2018 International Conference on Solid State Devices and Materials(SSDM2018)
  • Int'l Joint Research
• [Presentation] Normally-Off 2DHG Diamond Al2O3/SiO2 MOSFETs without deteriorating Drain Current Density (2018)
  • Author(s): T. Yabe, N. Oi, J. J. Buendia, S. Okubo, K. Horikawa, T. Kageura, S. Kono, A. Hiraiwa , H. Kawarada
  • Organizer: 2018 International Conference on Solid State Devices and Materials(SSDM2018)
  • Int'l Joint Research
• [Presentation] Vertical-Type 2DHG Diamond MOSFETs with a Few Micro Meter Length Trench Structure (2018)
  • Author(s): M. Iwataki, N. Oi, K. Horikawa, S. Amano, T. Kageura, M. Inaba, A. Hiraiwa, H. Kawarada
  • Organizer: 2018 International Conference on Solid State Devices and Materials(SSDM2018)
  • Int'l Joint Research
• [Presentation] Superconductivity in high quality single crystal boron-doped diamond films with Tc above 10K (2018)
  • Author(s): T. Kageura, I. Tsuyuzaki, T.Yamaguchi, Y. Takano and H.Kawarada
  • Organizer: 29th International Conference on Diamond and Carbon Materials (ICDCM 2018)
  • Int'l Joint Research
• [Presentation] Recent Progress of Diamond 2DHG p-FETs for Complementary High Voltage Inverter Application (2018)
  • Author(s): H. Kawarada
  • Organizer: International Symposium on Single Crystal Diamond and Electronics(SCDE 2018)
  • Int'l Joint Research / Invited
• [Presentation] Breakdown Mechanism of C-H Diamond MOSFETs Compared with Other Wide Bandgap Materials (2018)
  • Author(s): H. Kawarada
  • Organizer: The 12th New Diamond and Nano Carbons Conference (NDNC 2018)
  • Int'l Joint Research
• [Presentation] Superconductivity in Thin- and Micro-Structured Boron-Doped Diamond (2018)
  • Author(s): T. Kageura, M. Hideko, I. Tsuyuzaki, Y. Takano, M. Tachiki, S. Ooi and H.Kawarada
  • Organizer: The 12th New Diamond and Nano Carbons Conference (NDNC 2018)
  • Int'l Joint Research
• [Presentation] RF 窒素プラズマ支援MBE 成長によるダイヤモンド(111)基板上のAlN 薄膜の質とバンドオフセット (2018)
  • Author(s): 河野省三，蔭浦泰資，梶家美貴，加藤かなみ，Jorge J. Buendia，河合 空，川原田洋
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] 超伝導ボロンドープダイヤモンドジョセフソン接合の液体ヘリウム温度以上での動作条件の検討 (2018)
  • Author(s): 森下葵, 蔭浦泰資, 露崎活人, 天野勝太郎, 高野義彦, 立木実, 大井修一, 有沢俊一, 川原田洋
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] 高電圧印加による2DHGダイヤモンドMOSFETs: 遮断周波数fT = 31 GHz、出力電力密度Pout = 3.8 W/mm@1 GHz (2018)
  • Author(s): 久樂 顕, 今西 祥一朗, 大井 信敬, 大久保 智, 堀川 清貴, 蔭浦 泰資, 平岩 篤, 川原田 洋
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] 縦型2DHGダイヤモンドMOSFET：オーバーラップゲート構造による大電流密度、低オン抵抗化 (2018)
  • Author(s): 西村隼, 岩瀧 雅幸, 大井 信敬, 堀川 清貴, 天野 勝太郎, 蔭浦 泰資, 平岩 篤, 川原田 洋
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] 窒素終端ダイヤモンド中の浅いNVセンターを用いた1H-NMR (2018)
  • Author(s): 立石 哲也,薗田 隆弘,河合 空,山野 颯,Jorge J. Buendia,蔭浦 泰資,石井 邑,永岡 希朗,福田 諒介,谷井 孝至,春山 盛善,山田 圭介,小野田 忍,加田 渉,花泉 修, Alastair Stacey,神田 一浩,上村 雅治,寺地 徳之,磯谷 順一,河野 省三,川原田 洋
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] Al2O3/SiO2界面を導入した高ドレイン電流ノーマリオフ2DHGダイヤモンドMOSFET (2018)
  • Author(s): 矢部太一, 大井信敬, 堀川清貴, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋
  • Organizer: 第5回ZAIKENフェスタ
• [Presentation] ALD-Al2O3ダイヤモンドMOSFETsの高電圧印加時における高周波特性評価 (2018)
  • Author(s): 今西 祥一朗, 大井 信敬, 工藤 拓也, 大久保 智, 堀川 清貴, 平岩 篤, 川原田 洋
  • Organizer: 第5回ZAIKENフェスタ
• [Presentation] Al2O3/SiO2界面導入による高ドレイン電流ノーマリオフ2DHGダイヤモンドMOSFET (2018)
  • Author(s): 矢部太一, 大井信敬, 堀川清貴, 大久保智, Jorge. J. Buendia, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] 出力電力密度3.8 W/mm @1 GHzを有する2DHGダイヤモンドMOSFETs (2018)
  • Author(s): 久樂 顕,今西 祥一朗,大井 信敬,大久保 智,堀川 清貴,蔭浦 泰資,平岩 篤,川原田 洋
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] 液体ヘリウム温度以上で動作可能な超伝導ボロンドープダイヤモンドジョセフソン接合 (2018)
  • Author(s): 森下 葵，蔭浦 泰資，露崎 活人，天野 勝太郎，高野 義彦，立木 実, 大井 修一，有沢 俊一，川原田 洋
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] 窒素終端ダイヤモンド中の浅いNVセンターを用いたNMR測定(Ⅱ) (2018)
  • Author(s): 立石 哲也,薗田 隆弘,河合 空,山野 颯,Jorge J. Buendia,蔭浦 泰資,石井 邑,永岡 希朗,福田 諒介,谷井 孝至,春山 盛善,山田 圭介,小野田 忍,加田 渉,花泉 修, Alastair Stacey,神田 一浩,上村 雅治,寺地 徳之,磯谷 順一,河野 省三,川原田 洋
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] オーバーラップゲート構造による高オン電流、低オン抵抗 縦型2DHGダイヤモンドMOSFET (2018)
  • Author(s): 西村隼, 岩瀧 雅幸, 大井 信敬, 堀川 清貴, 天野 勝太郎, 蔭浦 泰資, 稲葉 優文, 平岩 篤, 川原田 洋
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] 相補型パワーインバータに向けたダイヤモンド2次元正孔ガス高耐圧電界効果トランジスタ (2018)
  • Author(s): 川原田 洋
  • Organizer: 第46回 薄膜・表面物理セミナー(応用物理学会薄膜・表面物理分科会)
  • Invited
• [Presentation] ダイヤモンドパワー電界トランジスタの進展 (2018)
  • Author(s): 川原田 洋, 大井信敬, 畢 特, 今西祥一朗, 岩瀧雅幸, 矢部太一, 平岩 篤
  • Organizer: 電子情報通信学会エレクトロニクスソサイティ シリコン材料・デバイス(SDM)研究会
• [Presentation] 量子センシングデバイスを目指したダイヤモンド結晶成長 (2018)
  • Author(s): 寺地徳之
  • Organizer: 平成30年度磁性材料研究会
  • Invited
• [Presentation] 超高純度・高品質ダイヤモンド結晶の化学気相成長-パワーデバイス・量子デバイスへの応用を目指して- (2018)
  • Author(s): 寺地徳之
  • Organizer: 日本結晶成長学会第103回バルク成長分科会研究会
  • Invited
• [Presentation] パワーデバイス応用とスピントロニクス応用を目指した超高純度ダイヤモンド気相成長 (2018)
  • Author(s): 寺地徳之
  • Organizer: 関西学院大学理工学部講演会
  • Invited
• [Presentation] Thick Homoepitaxial Layer Growth?A New Approach to Obtain Desired Substrates (2018)
  • Author(s): T. Teraji
  • Organizer: NDNC2018
  • Int'l Joint Research / Invited
• [Presentation] 高純度ダイヤモンド(111)薄膜のホモエピタキシャル成長 (2018)
  • Author(s): 寺地徳之，渡邊賢司
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] Ultra-high purity diamond chemical vapor deposition (2018)
  • Author(s): T. Teraji
  • Organizer: ACSIN-14 & ICSPM26
  • Int'l Joint Research
• [Presentation] Thick homoepitaxial diamond (111) film growth (2018)
  • Author(s): T. Teraji
  • Organizer: DCM2018
  • Int'l Joint Research
• [Presentation] 有機化合物イオン注入によるNV センターの多量子ビット形成 (2018)
  • Author(s): 小野田 忍, 春山 盛善, 樋口 泰成, 加田 渉, 千葉 敦也, 平野 貴美, 寺地 徳之, 五十嵐 龍治, 河合 空, 川原田 洋, 石井 邑, 福田 諒介, 谷井 孝至, 磯谷 順一, 花泉 修, 大島 武
  • Organizer: 第32回ダイヤモンドシンポジウム
• [Presentation] Lithographically Engineered Shallow Nitrogen-Vacancy Centers in Diamond for External Nuclear Spin Sensing (2018)
  • Author(s): R. Fukuda, P. Balasubramanian, I. Higashimata, Y. Ishii, K. Nagaoka, S. Kawai, T. Sonoda, T. Teraji, S. Onoda, M. Haruyama, K. Yamada, M. Inaba, H. Yamano, F. Stuerner, S. Schmitt, L.P. McGuiness, F. Jelezko, T. Ohshima, T. Shinada, H. Kawarada, W. Kada, O. Hanaizumi, J. Isoya, T. Tanii
  • Organizer: ACSIN-14 & ICSPM26
• [Presentation] Cascode Diamond p-FETを用いた相補型高電圧スイッチング回路 (2018)
  • Author(s): 山本 あおい, 畢 特, 牛 俊雄, 工藤 拓也, 大井 信敬, 大久保 智, 稲葉 優文, 佐々木 敏夫, 平岩 篤, 川原田 洋
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 高耐圧及び微細化に向けて構造改善を行った縦型2DHGダイヤモンドMOSFET (2018)
  • Author(s): 岩瀧 雅幸, 大井 信敬, 牟田 翼, 堀川 清貴, 天野 勝太郎, 日出幸 昌邦, 蔭浦 泰資, 稲葉 優文, 平岩 篤, 川原田 洋
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 窒素終端ダイヤモンド中の浅いNVセンターを用いたNMR測定 (2018)
  • Author(s): 薗田 隆弘, 河合 空, 山野 颯, 加藤 かなみ, Jorge Buendia, 蔭浦 泰資, 石井 邑, 福田 諒介, 岡田 拓真, 春山 盛善, 谷井 孝至, 山田 圭介, 小野田 忍, 加田 渉, 花泉 修, Alastair Stacey, 寺地 徳之, 河野 省三, 磯谷 順一, 川原田 洋
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 高出力化に向けたALD-Al2O3 2DHG ダイヤモンドMOSFETの高電圧動作における高周波特性評価 (2018)
  • Author(s): 今西 祥一朗, 大井 信敬，工藤 拓也，大久保 智，堀川 清貴, 平岩 篤, 川原田 洋
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 水素終端ダイヤモンド表面上のSiO2薄膜が二次元正孔ガス層に及ぼす影響 (2018)
  • Author(s): 矢部太一, 工藤拓也, 大井信敬, 大久保智, 堀川清貴, 天野勝太郎, 日出幸昌邦, 露崎活人, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] (111)ボロンドープダイヤモンドの薄層での超伝導転移温度の向上 (2018)
  • Author(s): 天野 勝太郎, 日出幸 昌邦, 蔭浦 泰資, 露崎 活人, 高野 義彦, 立木 実, 大井 修一, 川原田 洋
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] Fabrication of spin defects in diamond for quantum science and technology: from single to ensemble (2018)
  • Author(s): Shinobu Onoda, Tokuyuki Teraji, Hitoshi Sumiya, Takashi Tanii, Junichi Isoya
  • Organizer: International Conference on challenges in Quantum Information Science (CQIS2018)
  • Int'l Joint Research
• [Presentation] Heavily phosphorus doping of diamond grown on thick {111} CVD homoepitaxial diamond substrates (2018)
  • Author(s): S. Koizumi, T. Teraji, and T. Shimaoka
  • Organizer: HASSELT DIAMOND WORKSHOP -- SBDD XXIII
  • Int'l Joint Research
• [Presentation] Mechanism of reverse current increase of vertical-type WC diamond Schottky diodes (2018)
  • Author(s): T. Teraji, A. Fiori, N. Kiritani, S. Tanimoto, E. Gheeraert, and Y. Koide
  • Organizer: HASSELT DIAMOND WORKSHOP -- SBDD XXIII
  • Int'l Joint Research
• [Presentation] 量子センシング・ナノNMR：線幅13 Hzの観測 (2018)
  • Author(s): 磯谷 順一, M. Pfender, N. Aslam, 角谷 均, 小野田 忍, P. Neumann, C. Meriles, J. Wrachtrup
  • Organizer: 第65回応用物理学会
• [Presentation] 縦型2DHGダイヤモンドFETの特性向上 (2017)
  • Author(s): 大井 信敬, 工藤 拓也, 牟田 翼, 大久保 智, 露崎 活人, 星野 晴華, 蔭浦 泰資, 稲葉 優文, 小野田 忍, 平岩 篤, 川原田 洋
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川）
  • Year and Date: 2017-03-14
• [Presentation] ダイヤモンドセンシング応用に向けたダイヤ表面のNH2 終端評価 (2017)
  • Author(s): 梶家 美貴，加藤 かなみ，河合 空，山野 颯，五十嵐 圭為，M.S. Shaili，Evi Suaebah，蔭浦 泰資，稲葉 優文，河野 省三，川原田 洋
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川）
  • Year and Date: 2017-03-14
• [Presentation] 表面終端がダイヤモンド中の浅いNVセンターへ与える影響 (2017)
  • Author(s): 河合 空，山野 楓，梶家美貴，加藤かなみ，蔭浦泰資，稲葉優文，福田諒介, 岡田拓真, 東又 格,春山盛善, 谷井孝至，山田圭介,小野田 忍，加田 渉，花泉 修,寺地徳之,磯谷順一，川原田 洋
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川）
  • Year and Date: 2017-03-14
• [Presentation] 単結晶ダイヤモンド超伝導量子干渉計 (2017)
  • Author(s): 露崎 活人, 蔭浦 泰資, 日出幸昌邦, 大里 啓孝, 津谷 大樹, 笹間 陽介, 山口 尚秀, 高野 義彦, 立木 実, 大井 修一, 平田 和人, 有沢 俊一, 川原田 洋
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川）
  • Year and Date: 2017-03-14
• [Presentation] N-V中心NMRのためのダイヤモンド表面の電荷安定性 (2017)
  • Author(s): 川原田 洋, 山野 颯, 河合 空, 梶家 美貴, 加藤かなみ, 蔭浦 泰資, 稲葉 優文, 岡田 拓真, 東又格, 春山 盛善, 谷井 孝至, 山田 圭介, 小野田 忍, 寺地 徳之, 加田 渉, 花泉 修, 磯谷 順一
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜（神奈川）
  • Year and Date: 2017-03-14
• [Presentation] Normally-off Diamond MOSFETs in Cascode Configuration with Breakdown Voltage over 1.7kV (2017)
  • Author(s): J. Niu, T. Bi, D. Matsumura, T. Kudo, M. Inaba, T. Sasaki and H.Kawarada
  • Organizer: Hasselt Diamond Workshop 2017 - SBDD XXII
  • Place of Presentation: Hasselt, Belgium
  • Year and Date: 2017-03-08
  • Int'l Joint Research
• [Presentation] 2次元正孔ガス層による耐圧>1600VダイヤモンドpチャネルMOSFET (2017)
  • Author(s): 川原田 洋, 北林 祐哉, 柴田 将暢, 松村 大輔, 工藤 拓也, 牟田 翼, 大井 信敬, 稲葉 優文, 平岩 篤
  • Organizer: 「電子デバイス界面テクノロジー研究会-材料・プロセス・デバイス特性の物理」第22回研究会
  • Place of Presentation: 東レ総合研修センター（静岡県三島市）
  • Year and Date: 2017-01-19
• [Presentation] Diamond Power p-FETs Using Two-Dimensional Hole Gas for Complementary High Voltage Inverter (2017)
  • Author(s): H. Kawarada
  • Organizer: 2017 MRS Fall Meeting& Exhibit
  • Int'l Joint Research / Invited
• [Presentation] Effective Boron-Doping Method Using Custom-Built MPCVD System for High Tc Superconducting Diamond (2017)
  • Author(s): T. Kageura, M. Hideko, I. Tsuyuzaki, Y. Sasama, T. Yamaguchi, Y. Takano, H.Kawarada
  • Organizer: 2017 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Vertical-Type 2DHG Diamond MOSFETs (2017)
  • Author(s): N. Oi, T. Kudo, T. Muta, S. Okubo, I. Tsuyuzaki, T. Kageura, M. Inaba, S. Onoda, A. Hiraiwa, H. Kawarada
  • Organizer: 2017 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Single Crystalline Boron-Doped Diamond Superconducting Quantum Interference Devices (2017)
  • Author(s): I. Tsuyuzaki, T. Kageura, M. Hideko, Y. Sasama, T. Yamaguchi, Y. Takano, M.Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
  • Organizer: 2017 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Charge Stability and Coherence Property of Shallow Nitrogen Vacancy Center in Nitrogen Terminated Diamond for DNA Detection (2017)
  • Author(s): S. Kawai, H. Yamano, T. Sonoda, K.Kato, J. J. Buendia, E. Suaebah, T. Kageura, M. Inaba, R. Fukuda, T. Okada, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
  • Organizer: 2017 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Device Simulation of Several C-H MOSFETs Diamond Substrates via Two-Dimensional Negatively Charged Sheet Model (2017)
  • Author(s): J.J. Buendia, M. Shibata, M. Syamsul, H. Kawarada
  • Organizer: 2017 MRS Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Vertical Diamond MOSFETs, present characteristics and future perfomance (2017)
  • Author(s): H. Kawarada
  • Organizer: OIST Diamond Workshop 2017, Okinawa
  • Int'l Joint Research
• [Presentation] Heavily boron-doping for power electronics and superconductivity (2017)
  • Author(s): T. Kageura, Y. Takano, H. Kawarada
  • Organizer: OIST Diamond Workshop 2017, Okinawa
  • Int'l Joint Research
• [Presentation] Diamond Transistors for Power Electronics and Biosensing (2017)
  • Author(s): H. Kawarada
  • Organizer: International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2
  • Int'l Joint Research / Invited
• [Presentation] Single Crystalline Boron-doped Diamond Superconducting Quantum Interference Devices (2017)
  • Author(s): T.Kageura, I.Tyuyuzaki, M.Hideko, Y.Sasama, T.Yamaguchi, Y.Takano, M.Tachiki, S.Ooi, K.HIrata, S.Arisawa, H.Kawarada
  • Organizer: International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2
  • Int'l Joint Research
• [Presentation] Growth of Diamond Nanocylinder Forest Using Template-Assisted Antenna-Edge Type Microwave Plasma Chemical Vapor Deposition (2017)
  • Author(s): W. Fei, M.Inaba, Y.Hirano, H.Masuda , H.Kawarada
  • Organizer: International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2
  • Int'l Joint Research
• [Presentation] Normally-off Diamond p-FET Application in Cascode with Breakdown Voltage over 1.7 KV (2017)
  • Author(s): Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada
  • Organizer: International conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)/iLIM-2
  • Int'l Joint Research
• [Presentation] Vertical-type 2DHG Diamond MOSFETs (2017)
  • Author(s): N. Oi, T. Kudo, T. Muta, S. Okubo, I. Tsuyuzaki, T. Kageura, M. Inaba, S. Onoda, A. Hiraiwa, H. Kawarada
  • Organizer: 2017 International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Charge Stability of Shallow Nitrogen Vacancy Center in Diamond with Radical Exposure Nitridation Surface for DNA Detection (2017)
  • Author(s): S. Kawai, H. Yamano, T. Sonoda, M. Kajiya, K.Kato, J. J. Buendia, T. Kageura, M. Inaba, R. Fukuda, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, K. Yamada, S. Onoda, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada
  • Organizer: 2017 International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Boron-doped Diamond Superconducting Quantum Interference Devices with Two Step-Edge Josephson Junctions (2017)
  • Author(s): I. Tsuyuzaki, T. Kageura, M. Hideko, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, K. Hirata, S. Ooi, S. Arisawa, H. Kawarada
  • Organizer: 2017 International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Normally-off Diamond p-FET Application in Cascode with Breakdown Voltage over 1.7KV (2017)
  • Author(s): Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada
  • Organizer: 2017 International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Normally-off and vertical diamond power FETs using 2 dimensional hole gas (2017)
  • Author(s): H. Kawarada
  • Organizer: 2017 International Symposium on Single Crystal Diamond and Electronics (SCDE2017)
  • Int'l Joint Research / Invited
• [Presentation] Superconducting Single Crystal Diamond SQUID (2017)
  • Author(s): T.Kageura, M.Hideko, I.Tsuyuzaki, Y.Sasama, T.Yamaguchi, Y.Takano, M.Tachiki, S.Ooi, K.Hirata, S.Arisawa, H.Kawarada
  • Organizer: The 11th New Diamond and Nano Carbons 2017
  • Int'l Joint Research
• [Presentation] Heteroepitaxial diamond FET for power electronics application (2017)
  • Author(s): M.Syamsul, J.J. Buendia, N. Oi, S. Okubo, H.Kawarada
  • Organizer: The 11th New Diamond and Nano Carbons 2017
  • Int'l Joint Research
• [Presentation] Normally-off Diamond p-FET Application in Cascode with 1735 V Breakdown Voltage (2017)
  • Author(s): Te Bi, J. Niu, N. Oi, M. Inaba, T. Sasaki, H. Kawarada
  • Organizer: The 11th New Diamond and Nano Carbons 2017
  • Int'l Joint Research
• [Presentation] Cascodeダイヤモンドp-FETを用いたコンプリメンタリインバータ回路の特性 (2017)
  • Author(s): 山本あおい, Bi Te, 工藤拓也, 大井信敬, 大久保智, 平岩 篤, 川原田洋
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 縦型2DHGダイヤモンドMOSFETの作製及び特性評価 (2017)
  • Author(s): 岩瀧 雅幸, 大井 信敬, 工藤 拓也, 牟田 翼, 露崎 活人, 大久保 智, 蔭浦 泰資, 稲葉 優文, 小野田 忍, 平岩 篤, 川原田 洋
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 窒素終端ダイヤモンド中の浅いNVセンターのスピン特性 (2017)
  • Author(s): 薗田隆弘、河合空、山野颯、加藤かなみ、J. J., Buendia、蔭浦泰資、福田諒介、岡田拓真、谷井孝至、春山盛善、山田圭介、小野田忍、加田渉、花泉修、寺地徳之、磯谷順一、A. Stacey、河野省三、川原田洋
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 高電界>4×105V/cm下でのALD-Al2O3 2DHGダイヤモンドMOSFETの高周波特性の向上 (2017)
  • Author(s): 今西祥一朗，大井信敬，工藤拓也，大久保智，堀川清貴，平岩 篤，川原田洋
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] ダイヤモンド表面上に形成したSiO2薄膜が2次元正孔ガス層へ及ぼす影響 (2017)
  • Author(s): 矢部太一, 工藤拓也, 大井信敬, 河合空, Jorge J. Buendia, 梶家美貴, 大久保智, 堀川清貴, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 不連続(111)面を利用した超伝導ボロンドープ単結晶ダイヤモンドジョセフソン接合 (2017)
  • Author(s): 天野 勝太郎, 蔭浦 泰資, 日出幸 昌邦, 露崎 活人, 笹間 陽介, 山口 尚秀, 高野 義彦, 立木 実, 大井 修一, 平田 和人, 有沢 俊一, 川原田 洋
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 高耐圧ダイヤモンドFETの縦型，ノーマリオフ，低オン抵抗への検討 (2017)
  • Author(s): 川原田洋
  • Organizer: 応用物理学会 先進パワー半導体分科会 第4回講演会
  • Invited
• [Presentation] 窒素ラジカル暴露処理で形成された窒素終端ダイヤモンドの表面構造解析 (2017)
  • Author(s): 蔭浦 泰資、河合 空、山野 颯、薗田 隆弘、Buendia Jorge、谷井 孝至、春山 盛善、山田 圭介、小野田 忍、加田 渉、花泉 修、寺地 徳之、磯谷 順一、Stacey Alastair、河野 省三、川原田 洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 縦型2DHGダイヤモンドMOSFETsの動作解析と絶縁破壊電圧の向上 (2017)
  • Author(s): 大井 信敬, 工藤 拓也, 牟田 翼, 大久保 智, 露崎 活人, 蔭浦 泰資, 稲葉 優文, 小野田 忍, 平岩 篤, 川原田 洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 不連続(111)面を利用した超伝導ボロンドープ単結晶ダイヤモンドジョセフソン接合 (2017)
  • Author(s): 天野 勝太郎, 蔭浦 泰資, 日出幸 昌邦, 露崎 活人, 大里 啓孝, 津谷 大樹, 笹間 陽介, 山口 尚秀, 高野 義彦, 立木 実, 大井 修一, 平田 和人, 有沢 俊一, 川原田 洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 高電界>4×105V/cm下でのALD-Al2O3 2DHGダイヤモンドMOSFETの遮断周波数の向上 (2017)
  • Author(s): 今西 祥一朗, 大井 信敬，工藤 拓也，大久保 智，堀川 清貴, 平岩 篤, 川原田 洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] CVD法によりブロック層を形成した縦型２DHGダイヤモンドMOSFETの特性評価 (2017)
  • Author(s): 岩瀧 雅幸, 大井 信敬, 工藤 拓也, 牟田 翼, 大久保 智, 露崎 活人, 蔭浦 泰資, 稲葉 優文, 平岩篤, 川原田 洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 窒素終端およびシリコン終端ダイヤモンド中の浅いNVセンターのスピン特性 (2017)
  • Author(s): 薗田 隆弘, 河合 空, 山野 颯, 加藤 かなみ, 蔭浦 泰資, 福田 諒介, 岡田 拓真, 春山 盛善, 谷井 孝至, 山田 圭介, 小野田 忍, 寺地 徳之, 加田 渉, 花泉 修, 河野 省三, 磯谷 順一, 川原田 洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 水素終端ダイヤモンド表面上へ形成したSiO2薄膜が2次元正孔ガス層に及ぼす影響 (2017)
  • Author(s): 矢部太一, 工藤拓也, 河合空, 梶家美貴, 大井信敬, 大久保智, 堀川清貴, 蔭浦泰資, 河野省三, 平岩篤, 川原田洋
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] 高分解能ナノNMR：(111)ダイヤモンド薄膜の作製 (2017)
  • Author(s): 磯谷順一，小野田忍，角谷均，Nabeel Aslam, Matthias Pfender, Philipp Neumann, Rolf Reuter, Andrea Zappe, Felipe Fávaro de Oliveira, Andrej Denisenko, Jörg Wrachtrup
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] Fabrication of quantum HOHT diamonds: From single center to an ensemble og a high concentration (2017)
  • Author(s): J. Isoya, H. Sumiya, K. Ikeda, K. Nakamura and S. Onoida
  • Organizer: The 68th Diamond Conference
  • Int'l Joint Research
• [Presentation] "High Purity and High Quality Homoepitaxial Diamond Growth for Quantum Information and Quantum Sensing Device Applications (2017)
  • Author(s): T. Teraji
  • Organizer: 2017 MRS Spring Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Homoepitaxial chemical vapor deposition of diamond film for ultra-light doping (2017)
  • Author(s): T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, and Y. Koide
  • Organizer: NDNC2017
  • Int'l Joint Research
• [Presentation] Growth and Characterization of Conductive Diamond Multilayers for Schottky Diodes (2017)
  • Author(s): A. Fiori, T. Teraji,
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] High purity homoepitaxial diamond (111) film growth (2017)
  • Author(s): A. Fiori, T. Teraji
  • Organizer: DCM2017
  • Int'l Joint Research
• [Presentation] Surface effect and improvement of the quality factor of single crystal diamond NEMS resonators (2017)
  • Author(s): M.Y. Liao, H.H. Wu, L.W. Sang, T. Teraji, M. Imura, Y. Koide
  • Organizer: DCM2017
  • Int'l Joint Research
• [Presentation] Ultrapure Homoepitaxial Diamond Films Grown By Chemical Vapor Deposition (2017)
  • Author(s): T. Teraji,
  • Organizer: 232nd ECS Meeting
  • Int'l Joint Research / Invited
• [Presentation] Electrical properties of Schottky diodes formed on boron-doped diamond multilayers (2017)
  • Author(s): A. Fiori and T. Teraji,
  • Organizer: OIST Diamond Workshop 2017
  • Int'l Joint Research
• [Presentation] Ultra-high quality factor single crystal diamond MEMS resonators (2017)
  • Author(s): M. Liao, H. Wu, L. Sang, T. Teraji, M. Imura, and Y. Koide
  • Organizer: OIST Diamond Workshop 2017
  • Int'l Joint Research
• [Presentation] High Purity Diamond Films Growth for Electronic Device Application (2017)
  • Author(s): T. Teraji,
  • Organizer: OIST Diamond Workshop 2017
  • Int'l Joint Research
• [Presentation] 超高品質因子を持つ単結晶ダイヤモンドMEMS 振動子 (2017)
  • Author(s): 廖 梅勇，Haihua Wu，Liwen Sang，寺地徳之，井村将隆
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] ｛111｝単結晶CVD 厚膜表面での高濃度リンドープダイヤモンド成長 (2017)
  • Author(s): 小泉 聡，寺地徳之，嶋岡毅紘
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 炭化タングステン縦型ダイヤモンドショットキーダイオードの漏れ電流増加機構 (2017)
  • Author(s): 寺地徳之，フィオリ アレクサンドレ，桐谷範彦，谷本 智，ゲラール エチェン，小出康夫
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] Growth of Ultrapure Homoepitaxial Diamond Films by Chemical Vapor Deposition (2017)
  • Author(s): T. Teraji
  • Organizer: 2017 MRS Fall Meeting & Exhibit
  • Int'l Joint Research / Invited
• [Presentation] Optimization of annealing temperature and time for creation of NV centers with milisecond coherence times (2017)
  • Author(s): S. Onoda, K. Tatsumi, M. Haruyama, T. Teraji, J. Isoya, H. Yamano, H. Kawarada, W. Kada, O. Hanaizumi, T. Ohshima
  • Organizer: The 11th New Diamond and Nano Carbons Conference
  • Int'l Joint Research
• [Presentation] Creation of NV Centers in Diamonds for Quantum Sensing Application (2017)
  • Author(s): S. Onoda, H. Abe, A. Takeyama, T. Ohshima
  • Organizer: 1st QST International Symposium “Quantum Life Science”
  • Int'l Joint Research
• [Presentation] 生体応用を目指したナノ粒子中のカラーセンター作製技術 (2017)
  • Author(s): 小野田 忍, 武山 昭憲, 阿部 浩之, 大島 武
  • Organizer: 日本放射線影響学会第60回大会
• [Presentation] イオン注入によって作製したNVセンターの特性評価及び周囲の欠陥評価 (2017)
  • Author(s): 春山 盛善, 小野田 忍, 寺地 徳之, 磯谷 順一, 加田 渉, 大島 武, 花泉 修
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 量子センシング・ナノNMR：ケミカルシフトの観測 (2017)
  • Author(s): 磯谷 順一, N. Aslam, M. Pfender, P. Neumann, R. Reuter, A. Zappe, F. Oliveira, A. Denisenko, 角谷 均, 小野田 忍, J. Wrachtrup
  • Organizer: 第31回ダイヤモンドシンポジウム
• [Presentation] 生体応用のためのNVセンター含有ダイヤモンド形成 (2017)
  • Author(s): 小野田忍
  • Organizer: 2017年度生命科学系学会合同年次大会
  • Invited
• [Presentation] Lattice strain in superconducting boron-doped diamond (2016)
  • Author(s): T. Kageura, M. Shibata, Y. Sasama, T. Yamaguchi, Y. Takano, H. Kawarada
  • Organizer: IWSRFM 2016 (International Workshop on Superconductivity and Related Functional Materials)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-12-20
  • Int'l Joint Research
• [Presentation] Boron-doped diamond SQUID with regrowth-induced step edge structure Josephson junction (2016)
  • Author(s): M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
  • Organizer: IWSRFM 2016 (International Workshop on Superconductivity and Related Functional Materials)
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-12-20
  • Int'l Joint Research
• [Presentation] Vertically Oriented Graphite Layer Formed on (001) Diamond by Hot Implantation and High Temperature Annealing (2016)
  • Author(s): M. Inaba, H. Yamano, T. Kageura, and H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Over 2000 V Breakdown Voltage of Normally-off C-H Diamond MOSFETs with high threshold voltage (2016)
  • Author(s): T. Kudo, Y. Kitabayashi, D. Matsumura, Y. Hayashi, M. Inaba, A. Hiraiwa H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Superconducting Boron-doped Diamond Josephson Junction with Regrowth-induced Step Edge Structure (2016)
  • Author(s): M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa, H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Charge State Stabilization of Shallow Nitrogen Vacancy Centers in Diamond by Oxygen Ambient Surface Modification (2016)
  • Author(s): H. Yamano, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] The Electron States of Shallow NV Centers after DNA Immobilization on Partially NH 2 Terminated Diamond (2016)
  • Author(s): K. Kato, H. Yamano, T. Kageura, M. Inaba, M. Haruyama, Evi Suaebah, O.Hanaizumi, W. Kada, S. Onoda, T. Teraji, J. Isoya, H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Vertical MOSFETs-Using C-H Diamond with Trench-Channel (2016)
  • Author(s): T. Muta, N. Oi, M. Inaba, T. Saito, D. Matsumura, T. Kudo, A. Hiraiwa, H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Diamond Nanocylinder Forest Formed by Porous Alumina Template (2016)
  • Author(s): W. Fei, M. Inaba, Y. Hirano, H. Masuda, H. Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Stacking Faults and Twins Induced by Lattice Relaxation in Superconducting Boron-Doped Diamond Synthesized by Microwave Plasma Chemical Vapor Deposition (2016)
  • Author(s): T. Kageura, M. Hideko, M. Shibata, Y. Sasama, T. Yamaguchi, Y. Takano, H.Kawarada
  • Organizer: 2016 MRS Fall Meeting& Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] 酸素雰囲気中の熱処理による浅いNVセンターのスピン特性改善 (2016)
  • Author(s): 河合 空，山野 楓，梶家美貴，加藤かなみ，蔭浦泰資，稲葉優文，岡田拓真, 東又 格,春山盛善, 谷井孝至，山田圭介,小野田 忍，加田 渉，花泉 修,寺地徳之,磯谷順一，川原田 洋
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス、東京
  • Year and Date: 2016-11-16
• [Presentation] ボロンドープダイヤモンド超伝導量子干渉計の特性評価 (2016)
  • Author(s): 露崎 活人, 蔭浦 泰資, 日出幸昌邦, 笹間 陽介, 山口 尚秀, 高野 義彦, 立木 実, 大井 修一, 平田 和人, 有沢 俊一, 川原田 洋
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス、東京
  • Year and Date: 2016-11-16
• [Presentation] 高温 ALD Al2O3ゲート絶縁膜を持つC-HダイヤモンドMOSFETの温度特性 (2016)
  • Author(s): 大井信教，工藤拓也，牟田 翼，大久保 智，稲葉優文，平岩 篤，川原田 洋
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス、東京
  • Year and Date: 2016-11-16
• [Presentation] DNAのNMR検出に向けた部分NH２終端ダイヤモンド中の浅いNVセンター (2016)
  • Author(s): 梶家美貴，加藤かなみ，河合 空，山野 楓，S.Evi，蔭浦泰資，稲葉優文，東又 格，春山盛善，谷井孝至，山田圭介，小野田 忍，寺地徳之，加田 渉，花泉 修，磯谷順一，河野省三，川原田 洋
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス、東京
  • Year and Date: 2016-11-16
• [Presentation] 超伝導ボロンドープダイヤモンド中の格子歪みと格子緩和 (2016)
  • Author(s): 蔭浦泰資，柴田将暢，山口尚秀，高野義彦，川原田 洋
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス、東京
  • Year and Date: 2016-11-16
• [Presentation] ダイヤモンドへのイオン注入・高温アニールによる表面形成物 (2016)
  • Author(s): 稲葉優文，関 章憲，佐藤和明，櫛田知義，平岩 篤，川原田 洋
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス、東京
  • Year and Date: 2016-11-16
• [Presentation] Gate Threshold Voltage Control of C-H Diamond MOSFETs (2016)
  • Author(s): T. Kudo, Y. Kitabayashi, D. Matsumura, Y. Hayashi, M. Inaba, A. Hiraiwa H. Kawarada
  • Organizer: 2016 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] Superconducting (111) Boron-doped Diamond Josephson Junction with Regrowth-induced (001) Step Edge Structure (2016)
  • Author(s): M. Hideko, T. Kageura, I. Tuyuzaki, M. Shibata, Y. Kitabayashi, Y. Sasama, T. Yamaguchi, Y. Takano, M. Tachiki, S. Ooi, K. Hirata, S. Arisawa and H. Kawarada
  • Organizer: 2016 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] Vertical MOSFET using C-H Diamond with Trench-channel (2016)
  • Author(s): T. Muta, T. Saito, M. Inaba, D. Matsumura, T. Kudo, Y. Kitabayashi, A. Hiraiwa, H. Kawarada
  • Organizer: 2016 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] Coherence Properties and Charge Stability of Shallow Implanted Nitrogen Vacancy Centers in 12C enriched Diamond (2016)
  • Author(s): H. Yamano, K. Kato, T. Kageura, M. Inaba, T. Okada, I. Higashimata, M. Haruyama, T. Tanii, S. Onoda, W. Kada, O. Hanaizumi, T. Teraji, J. Isoya, H. Kawarada
  • Organizer: 2016 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-09-26
  • Int'l Joint Research
• [Presentation] Planer Diamond P-channel MOSFETs with Breakdown Voltage VB > 1.8kV and High Drain Current Density by 2DHG (2016)
  • Author(s): H.Kawarada, Y.Kitabayashi, M.Syamsul N.S.B., M.Shibata, D.Matsumura, T.Kudo, A.Hiraiwa
  • Organizer: 2016 International Conference on Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2016-09-26
  • Int'l Joint Research / Invited
• [Presentation] 追成長を用いたステップエッジ構造ジョセフソン接合によるボロンドープダイヤモンド超伝導量子干渉計 (2016)
  • Author(s): 露崎 活人, 蔭浦 泰資, 日出幸 昌邦, 笹間 陽介, 山口 尚秀, 高野 義彦, 川原田 洋
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟）
  • Year and Date: 2016-09-13
• [Presentation] C-H ダイヤモンド MOSFET の動作特性の温度依存性 (2016)
  • Author(s): 大井 信敬, 工藤 拓也, 牟田 翼, 松村 大輔, 大久保 智, 稲葉 優文, 平岩 篤, 川原田 洋
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟）
  • Year and Date: 2016-09-13
• [Presentation] 表面酸化によるダイヤモンド中の浅い NV センターのコヒーレ ンス特性 (2016)
  • Author(s): 河合 空 , 山野 颯 , 梶家 美貴 , 加藤 かな み , 蔭浦 泰資 , 稲葉 優文 , 岡田 拓真 , 東又 格 , 春山 盛善 , 谷井 孝至 , 山田 圭介 , 小野田 忍 , 寺地 徳之 , 加田 渉 , 花泉 修 , 磯谷 順一 , 川原 田 洋
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟）
  • Year and Date: 2016-09-13
• [Presentation] DNAのNMR検出に向けたNH 2 終端ダイヤモンド中の浅いNVセンター (2016)
  • Author(s): 梶家美貴，加藤かなみ，河合空，山野颯，Evi Suaebah，蔭浦泰資，稲葉優文，河野省三，東又格，春山盛善,谷井孝至，山田圭介，小野田忍，寺地徳之，加田渉，花泉修，磯谷順一，河野省三，川原田洋
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟）
  • Year and Date: 2016-09-13
• [Presentation] （111）超伝導ボロンドープダイヤモンド中の歪み層と緩和層 (2016)
  • Author(s): 蔭浦泰資、日出幸 昌邦、柴田 将暢、笹間 陽介、山口 尚秀、高野 義彦、川原田 洋
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟）
  • Year and Date: 2016-09-13
• [Presentation] ダイヤモンド電解質溶液ゲートFETのしきい値 (2016)
  • Author(s): 稲葉 優文, 五十嵐 圭為, 楢村 卓朗, 阿部 修平, 柴田 将暢, 新谷 幸弘, 平岩 篤, 川原田 洋
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟）
  • Year and Date: 2016-09-13
• [Presentation] High endurance white polycrystalline diamond FET for power device application (2016)
  • Author(s): M.Syamsul, Y.Kitabayashi, D.Matsumura, H.Kawarada
  • Organizer: 2016. International Conference on Diamond and Carbon Materials
  • Place of Presentation: Le Corum, Montpellier, France
  • Year and Date: 2016-09-04
  • Int'l Joint Research
• [Presentation] Cost effective white polycrystalline diamond FET using 2D hole gas (2016)
  • Author(s): M.Syamsul, Y.Kitabayashi, D.Matsumura, H.Kawarada
  • Organizer: 2016. NANO KOREA 2016 Symposium
  • Place of Presentation: KINTEX, Ilsan, Korea
  • Year and Date: 2016-07-13
  • Int'l Joint Research
• [Presentation] Vertical Type Hydrogen Terminated Diamond MOSFETs (2016)
  • Author(s): M. Inaba, T. Muta, M. Kobayashi, D. Matsumura, T. Saito, T. Kudo, A. Hiraiwa, H. Kawarada
  • Organizer: 第35回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖(滋賀)
  • Year and Date: 2016-07-06
• [Presentation] Diamond Power MOSFETs using 2 Dimensional Hole Gas (2016)
  • Author(s): H. Kawarada
  • Organizer: 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)
  • Place of Presentation: Hakodate, Japan
  • Year and Date: 2016-07-04
  • Int'l Joint Research / Invited
• [Presentation] Diamond as Power Electronics Platform (2016)
  • Author(s): H. Kawarada, Y. Kitabayashi , M. Shibata , D. Matsumura , T. Saito , T. Kudo , T. Muta, M. Inaba , A. Hiraiwa
  • Organizer: 10th International Conference on New Diamond and Nano Carbons(NDNC2016)
  • Place of Presentation: The Westin Xi’an, China
  • Year and Date: 2016-06-23
  • Int'l Joint Research / Invited
• [Presentation] Growth of diamond nanorods using antenna-edge-type microwave plasma-assisted chemical vapor deposition (2016)
  • Author(s): W. Fei, M.Inaba, Y.Hirano, H.Masuda , H.Kawarada
  • Organizer: 10th International Conference on New Diamond and Nano Carbons(NDNC2016)
  • Place of Presentation: The Westin Xi’an, China
  • Year and Date: 2016-06-23
  • Int'l Joint Research
• [Presentation] Amine termination of nanocrystalline diamond surface by nitrogen radical beam (NRB) for biosensing application (2016)
  • Author(s): E. Suaebah , Y. Seshimo, T. Naramura, M. Hasegawa , H. Kawarada
  • Organizer: 10th International Conference on New Diamond and Nano Carbons(NDNC2016)
  • Place of Presentation: The Westin Xi’an, China
  • Year and Date: 2016-06-23
  • Int'l Joint Research
• [Presentation] High quality homoepitaxial diamond growth by chemical vapor deposition for high-performance electronic devices (2016)
  • Author(s): T. Teraji
  • Organizer: 10th International Conference on New Diamond and Nano Carbons(NDNC2016)
  • Place of Presentation: The Westin Xi’an, China
  • Year and Date: 2016-06-23
  • Int'l Joint Research / Invited
• [Presentation] Diamond MOSFETs Using 2D Hole Gas with 1700V Breakdown Voltage (2016)
  • Author(s): H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa
  • Organizer: 28th International Symposium on Power Semiconductor Devices and ICs
  • Place of Presentation: Prague, Czech Republic
  • Year and Date: 2016-06-12
  • Int'l Joint Research
• [Presentation] 超高純度ダイヤモンドの成長とその物性 (2016)
  • Author(s): 寺地徳之
  • Organizer: 第8回窒化物半導体結晶成長講演
  • Place of Presentation: 京都大学、京都市
  • Year and Date: 2016-05-09
  • Invited
• [Presentation] High Purity and High Quality Homoepitaxial Diamond Growth for Power Device Application (2016)
  • Author(s): T. Teraji
  • Organizer: 2016 MRS Spring Meeting & Exhibit
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2016-03-31
  • Int'l Joint Research / Invited
• [Presentation] Physical Properties of Superconducting Boron-Doped Diamonds (2016)
  • Author(s): T.Kageura, M.Shibata, M.Hideko, Y.Sasama, T.Yamaguchi, Y.Takano, H.Kawarada
  • Organizer: 2016 MRS Spring Meeting & Exhibit
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2016-03-28
  • Int'l Joint Research
• [Presentation] Normally-Off C-H Diamond MOSFET with the Breakdown Voltage of Above 2000V (2016)
  • Author(s): H.Kawarada, Y.Kitabayashi, M.Shibata, Y.Hayashi, A.Hiraiwa
  • Organizer: 2016 MRS Spring Meeting & Exhibit
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2016-03-28
  • Int'l Joint Research
• [Presentation] ボロンドープダイヤモンド超伝導量子干渉計の 作製に向けたジョセフソン接合の直流 交流ジョセフソン効果の観測 (2016)
  • Author(s): 日出幸昌邦, 蔭浦泰資, 柴田将暢, 北林祐哉, 笹間陽介, 山口尚秀, 高野義彦, 川原田洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 磁気センサー応用に向けた単一のNVセンターの作製と状態の評価 (2016)
  • Author(s): 山野颯、加藤かなみ、蔭浦泰資、稲葉優文、東又格、小池悟大、春山盛善、谷井孝至、小野田忍、寺地徳之、加田渉、花泉修、 磯谷順一、川原田洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 縦型構造トレンチチャネルC-HダイヤモンドMOSFET(Ⅱ) (2016)
  • Author(s): 牟田翼、斎藤 俊輝、工藤 拓也、北林 祐哉、松村 大輔、牛 俊雄、稲葉 優文、平岩 篤、川原田洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 高耐圧・高電流密度を有する ノーマリオフC-HダイヤモンドMOSFET (2016)
  • Author(s): 工藤 拓也, 北林 祐哉, 山田 哲也, 許 德琛, 斎藤 俊輝, 松村 大輔, 林 佑哉, 瀬下 裕志, 平岩 篤, 川原田 洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] ゲート型ダイヤモンド電解質溶液ゲートFETの電流電圧特性 (2016)
  • Author(s): 五十嵐 圭為、楢村 卓朗, モフドスクリ シャイリ, 稲葉 優文, 新谷 幸弘, 平岩 篤, 川原田 洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 表面終端による浅いNVセンターの電荷状態 (2016)
  • Author(s): 加藤 かなみ、山野 颯、蔭浦 泰資、瀬下 裕志、稲葉 優文、東又 格、小池 悟大、谷井 孝至、磯谷 順一、寺地 徳之、小野田 忍、春山 盛善,加田 渉、花泉 修、川原田 洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] C-H多結晶ダイヤモンドMOSFETへの高電圧印加による電流特性変化 (2016)
  • Author(s): 牛俊雄, 許德琛,山田哲也,北林祐哉,斎藤俊輝,柴田将暢,松村大輔,工藤拓也,稲葉優文,平岩篤,川原田洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] ダイヤモンドへの高温アニールにより作製した垂直配向グラファイト (2016)
  • Author(s): 稲葉 優文, 費 文茜, 平野 優, 鈴木 和真, 川原田 洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 原子層堆積（ALD）温度を変えて形成したAl2O3膜の電気特性 (2016)
  • Author(s): 平岩 篤、松村 大輔、川原田 洋
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 量子ビームを活用したダイヤモンド中のカラーセンター形成技術の現状 (2016)
  • Author(s): 小野田 忍 春山 盛善, 寺地 徳之, 磯谷 順一,小池 悟大, 東又 格, 稲葉優文, 山野 楓, 加藤 かなみ，Christoph Müller, Liam McGuinness, Priyadharshini Balasubramanian, Boris Naydenov, Fedor Jelezko, 佐藤 真一郎, 大島 武, 加田 渉 花泉 修, 谷井 孝至, 川原田 洋
  • Organizer: 物理学会第71回年次大会
  • Place of Presentation: 東北学院大学（宮城県）
  • Year and Date: 2016-03-19
  • Invited
• [Presentation] ダイヤモンドのNVセンターを用いる超高感度NMR (2016)
  • Author(s): 磯谷順一, 角谷 均, Jochen Scheuer, Ilai Schwartz, Qiong Chen, David Schulze-Sünninghausen, Patrick Carl, Peter Höfer, Alexander Retzker, Burkhard Luy, Martin B. Plenio, Boris Naydenov, Fedor Jelezko
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 酸素添加条件で成長したホモエピタキシャルダイヤモンド(100)薄膜中の欠陥評価 (2016)
  • Author(s): 寺地徳之、渡邊賢司
  • Organizer: 第63回応用物理学会学術講演会
  • Place of Presentation: 東京工業大学(東京都）
  • Year and Date: 2016-03-19
• [Presentation] 超高純度ダイヤモンドの成長とカラーセンターの極微量濃度制御 (2016)
  • Author(s): 寺地徳之
  • Organizer: 物理学会第71回年次大会
  • Place of Presentation: 東北学院大学（宮城県）
  • Year and Date: 2016-03-19
  • Invited
• [Presentation] Diamond functionalization for Biosensing Application (2016)
  • Author(s): E. Suaebah, T. Naramura, M. Hasegawa, H. Kawarada
  • Organizer: 2016. The 6th Basic Science International Meeting
  • Place of Presentation: Malang, Indonesia
  • Year and Date: 2016-03-02
  • Int'l Joint Research
• [Presentation] Direct partial CH3 termination into carboxyl terminated diamond surface for biosensor (2016)
  • Author(s): E. Suaebah, T. Naramura,H. Kawarada
  • Organizer: 2016. The 6th Basic Science International Meeting
  • Place of Presentation: Malang, Indonesia
  • Year and Date: 2016-03-02
  • Int'l Joint Research
• [Presentation] 超伝導ボロンドープダイヤモンド中の歪み層と緩和層 (2016)
  • Author(s): 蔭浦泰資
  • Organizer: 第3回ZAIKENフェスタ
  • Place of Presentation: 早稲田大学各務記念材料技術研究所、東京
• [Presentation] Growth of Diamond Nanocylinder Forest Using Template-Assisted Microwave Plasma Chemical Vapor Deposition (2016)
  • Author(s): Wenxi Fei, Masafumi Inaba, Yu Hirano, Hideki Masuda, Hiroshi Kawarada
  • Organizer: 第3回ZAIKENフェスタ
  • Place of Presentation: 早稲田大学各務記念材料技術研究所、東京
• [Presentation] NVセンターを用いたダイヤモンド表面DNAのNMR検出 (2016)
  • Author(s): 加藤かなみ、河野省三、川原田洋
  • Organizer: 第3回ZAIKENフェスタ
  • Place of Presentation: 早稲田大学各務記念材料技術研究所、東京
• [Presentation] ボロンドープダイヤモンド超伝導量子干渉計(SQUID)の開発 (2016)
  • Author(s): 蔭浦泰資、日出幸昌邦、露崎活人、川原田洋、笹川崇男
  • Organizer: 文部科学省「学際・国際的高度人材育成ライフイノベーションマテリアル創製共同研究プロジェクト」（六研連携プロジェクト）キックオフ公開討論会
  • Place of Presentation: 名古屋大学（愛知）
• [Presentation] High-Reliability SiO2 Films Formed on Diamond by Thermal Oxidation of Si (2015)
  • Author(s): T. Hara, A. Hiraiwa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] C-H Diamond MOSFETs with 1.7 kV Breakdown Voltage and >190mA/mm Current Density (2015)
  • Author(s): Y. Kitabayashi, T. Yamada, Dechen Xu, T. Saito, D. Matsumura, A. Hiraiwa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] Device Simulation of C-H Diamond MOSFETs based on 2DHG formed by 2D Fixed Negative Charge (2015)
  • Author(s): M.Shibata, Y.Kitabayashi, A.Hiraiwa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] Structural and Electrical Properties of Double-Domain Heteroepitaxial AlN on (001) Diamond Substrate (2015)
  • Author(s): Y. Hayashi, W. Ono, D. Matsumura, A. Hiraiwa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] High-Temperature Electric-Insulation Characteristics of High-Temperature-ALD-Grown Al2O3 Films (2015)
  • Author(s): D. Matsumura, A. Hiraiwa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] Trench-Channel Vertical MOSFET Using C-H Diamond Surface (2015)
  • Author(s): T. Saito、M. Kobayashi, Y. Kitabayashi, D. Matsumura, M. Inaba, A. Hiraiwa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] Diamond based Biosensor on Direct Carboxyl Termination for Biomolecule Activation (2015)
  • Author(s): E. Suaebah, T. Naramura, M. Myodo, M. Hasegawa, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] High Voltage Breakdown 1.8 kV Hydrogenated Black Diamond Field Effect Transistor (2015)
  • Author(s): M.Syamsul.N.B.S.B, Y. Kitabayashi, D. Matsumura, T. Saito, H. Kawarada
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-29
  • Int'l Joint Research
• [Presentation] 表面終端と空乏層による浅いNVセンターの電荷状態 (2015)
  • Author(s): 加藤かなみ，山野颯，蔭浦泰資，柴田将暢,稲葉優文，小池悟大, 谷井孝至，磯谷順一,小野田忍， 寺地徳之，川原田洋
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス(東京都）
  • Year and Date: 2015-11-17
• [Presentation] 高耐圧・高電流密度を有するノーマリオフC-HダイヤモンドMOSFET (2015)
  • Author(s): 工藤拓也, 北林 祐哉, 山田 哲也, 許 德琛, 斎藤 俊輝, 松村 大輔, 林 佑哉, 平岩 篤, 川原田 洋
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス(東京都）
  • Year and Date: 2015-11-17
• [Presentation] ボロンドープダイヤモンド超伝導量子干渉計の作製に向けたジョセフソン接合の特性評価 (2015)
  • Author(s): 日出幸昌邦, 蔭浦泰資, 柴田将暢, 北林祐哉, 笹間陽介, 山口尚秀, 高野義彦, 川原田洋
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス(東京都）
  • Year and Date: 2015-11-17
• [Presentation] 表面水素終端化による浅いNVセンターへの影響 (2015)
  • Author(s): 山野颯, 山野 颯，稲葉優文，蔭浦泰資，加藤かなみ，小池悟大，谷井孝至，小野田 忍，寺地徳之，磯谷順一，川原田 洋
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス(東京都）
  • Year and Date: 2015-11-17
• [Presentation] keVからGeVのイオン注入を用いて形成したNVセンターの特性評価 (2015)
  • Author(s): 小野田 忍，春山盛善，寺地徳之，磯谷順一，C. Müller, L. McGuinness, P. Balasubramanian, B. Naydenov, F. Jelezko，小池悟大，東又格，稲葉優文，大島 武，加田 渉，花泉 修，谷井孝至，川原田 洋
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス(東京都）
  • Year and Date: 2015-11-17
• [Presentation] New High-Temperature Instability of ALD-Al2O3 MIS Capacitors (2015)
  • Author(s): D. Matsumura, A. Hiraiwa, H. Kawarada
  • Organizer: IWDTF （International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES SCIENCE AND TECHNOLOGY
  • Place of Presentation: Miraikan, National Museum of Emerging Science and Innovation, Tokyo
  • Year and Date: 2015-11-02
  • Int'l Joint Research
• [Presentation] Direct Partial CH3 Termination into Carboxyl (2015)
  • Author(s): Evi Suaebah, T. Naramura, H. Kawarada
  • Organizer: IEEE SENSORS 2015
  • Place of Presentation: Busan, South Korea
  • Year and Date: 2015-11-01
  • Int'l Joint Research
• [Presentation] High quality homoepitaxial diamond growth by chemical vapor deposition for high-performance electronic devices (2015)
  • Author(s): T. Teraji,
  • Organizer: IUMRS-ICAM2015
  • Place of Presentation: ICC JEJU, KOREA
  • Year and Date: 2015-10-27
  • Int'l Joint Research / Invited
• [Presentation] All-solid-State pH Sensor utilizing Termination-controlled Boron-doped Diamond Surface as pH-sensitive/pH-less-sensitive Interface (2015)
  • Author(s): Y. Shintani, K. Ogawa, H. Kawarada
  • Organizer: The 66th Annual Meeting of the International Society of Electrochemistry
  • Place of Presentation: Taiwan
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] Characterization of Polycrystalline Doped-diamond Electrolyte-solution-gate Field-effect Transistor pH Sensor with/without termination control (2015)
  • Author(s): Y. Shintani, K. Ogawa, H. Kawarada
  • Organizer: The 66th Annual Meeting of the International Society of Electrochemistry
  • Place of Presentation: Taiwan
  • Year and Date: 2015-10-04
  • Int'l Joint Research
• [Presentation] 1.7 KV Breakdown C-H Diamond MOSFETs with High Drain Current Density (2015)
  • Author(s): Y. Kitabayashi, T. Yamada, D. Xu, T. Saito, D. Matsumura, A. Hiraiwa and H.Kawarada
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2015-09-27
  • Int'l Joint Research
• [Presentation] Effect of Stacking Faults on Magnetic Flux Pinning in BoronDoped Superconducting Diamond Films (2015)
  • Author(s): M. Shibata, T. Kageura, T. Yamaguchi, Y. Takano, and H. Kawarada
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2015-09-27
  • Int'l Joint Research
• [Presentation] Trench-channel MOSFET using C-H Diamond Surface (2015)
  • Author(s): T. Saito, M. Kobayashi, T. Yamada, D. Xu, Y. Kitabayashi, D. Matsumura, M. Inaba, A. Hiraiwa,and H. Kawarada
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2015-09-27
  • Int'l Joint Research
• [Presentation] Ultrapure Diamond Growth by Chemical Vapor Deposition (2015)
  • Author(s): T. Teraji,
  • Organizer: SSDM2016
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2015-09-27
  • Int'l Joint Research / Invited
• [Presentation] 絶縁破壊電圧1.7 kVおよび電流密度~200 mA/mmのC-HダイヤモンドMOSFET (C-H Diamond MOSFETs with 1.7 kV breakdown voltage and >200mA/mm current density) (2015)
  • Author(s): 工藤 拓也, 北林 祐哉, 山田 哲也, 許 德琛, 斎藤 俊輝, 松村 大輔, 柴田将暢, 平岩 篤, 川原田 洋
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] ボロンドープダイヤモンド超伝導量子干渉計の作製に向けたジョセフソン接合の特性評価 (2015)
  • Author(s): 日出幸 昌邦、蔭浦 泰資、柴田 将暢、北林 祐哉、山口 尚秀、高野 義彦、川原田 洋
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] 2次元固定負電荷誘起による2DHGを用いたC-HダイヤモンドMOSFETデバイスシミュレーション (2015)
  • Author(s): 柴田 将暢、許 德琛、北林 祐哉、平岩 篤、川原田 洋
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] ダイヤモンド上への高信頼熱酸化 SiO2膜の形成 (2015)
  • Author(s): 原 壮志、平岩 篤、川原田 洋、
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] 縦型構造トレンチチャネル C-H ダイヤモンド MOSFET (2015)
  • Author(s): 斎藤 俊輝, 小林 幹典, 北林 佑哉, 松村 大輔,稲葉 優文, 平岩 篤, 川原田 洋
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] 黒ダイヤモンドを用いた電解質溶液ゲートFETの電気的特性評価 (2015)
  • Author(s): 楢村 卓朗, モフドスクリ シャイリ, 稲葉 優文, 小林 幹典, 新谷 幸弘, 平岩 篤, 川原田 洋
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] 超伝導ダイヤモンド中の格子緩和による積層欠陥の導入と磁束ピンニングの観測 (2015)
  • Author(s): 蔭浦 泰資 、柴田 将暢、山口 尚秀、高野 義彦、川原田 洋
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] Hydrogenated Black Diamond FET with high voltage breakdown of 1.8kV (2015)
  • Author(s): M.Syamsul N.S.B., Kitabayashi Yuya , Daisuke Matsumura, Toshiki Saito, Hiroshi Kawarada
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場(愛知県)
  • Year and Date: 2015-09-13
• [Presentation] High Voltage H-terminated Diamond MOSFETs using 2D Hole Gas with >1600V Breakdown and High Current Density (2015)
  • Author(s): H. Kawarada T. Yamada, D. Xu, H. Tsuboi, Y. Kitabayashi, A. Hiraiwa
  • Organizer: International Conference on Diamond and Carbon Materials
  • Place of Presentation: Bad Homburg, Germany
  • Year and Date: 2015-09-06
  • Int'l Joint Research / Invited
• [Presentation] Diamond transistors and superconducting devices for N-V center research (2015)
  • Author(s): H. Kawarada
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: Takamatsu, Kagawa, Japan
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Diamond surface fluorescence for device sensing (2015)
  • Author(s): M. Inaba, H. Yamano, K. Kato, T. Kageura, M. Shibata, S. Onoda, T. Teraji, J. Isoya, T. Tanii, H. Kawarada
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: Takamatsu, Kagawa, Japan
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Physical properties of superconducting diamond for quantum devices (2015)
  • Author(s): T.Kageura, M.Shibata, T.Yamaguchi, Y.Takano, H.Kawarada
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: Takamatsu, Kagawa, Japan
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Material science approach in diamond quantum device development” “Diamond Quantum Sensing Workshop (2015)
  • Author(s): Junichi Isoya
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: Takamatsu, Kagawa, Japan
  • Year and Date: 2015-08-05
• [Presentation] Diamond film growth for formation of single photon source (2015)
  • Author(s): T. Teraji,
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: Takamatsu, Kagawa, Japan
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Lattice strain analysis of superconducting boron doped diamond (2015)
  • Author(s): T. Kageura , M. Shibata , T. Yamaguchi , Y. Takano , H. Kawarada
  • Organizer: The 6th NIMS/MANA-Waseda University International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-07-29
  • Int'l Joint Research
• [Presentation] Reproducible Growth of Homoepitaxial Diamond Thicker (>10 µm) Film with Low Defect Density (2015)
  • Author(s): T. Teraji
  • Organizer: 3rd - French-Japanese workshop on diamond power devices
  • Place of Presentation: C-Suite hotel, Nimes, France
  • Year and Date: 2015-07-08
  • Int'l Joint Research / Invited
• [Presentation] High-reliability Passivation of Diamond Surface Conduction Layer Using High-temperature H2O-oxidant ALD Growth of Al2O3 (2015)
  • Author(s): A. Hiraiwa, T. Saito, D. Matsumuara, and H. Kawarada
  • Organizer: AVS 15th International Conference on Atomic Layer Deposition
  • Place of Presentation: Portland, USA
  • Year and Date: 2015-06-28
  • Int'l Joint Research
• [Presentation] Diamond Power MOSFETs with >1600V Breakdown Voltages and High Current Density (2015)
  • Author(s): H. Kawarada
  • Organizer: 2015 International Symposium on Single Crystal Diamond and Electronics (SCDE 2015)
  • Place of Presentation: Xi'an, China
  • Year and Date: 2015-06-12
  • Int'l Joint Research / Invited
• [Presentation] Lattice strain dependence of superconducting boron-doped diamond thin film critical thickness (2015)
  • Author(s): T. Kageura, M. Shibata, T. Sasagawa, H.Kawarada
  • Organizer: AMDI-6:The 6th International Symposium on Advanced Materials Development and Integration of Novel Structural Metallic and Inorganic Materials
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2015-06-09
  • Int'l Joint Research
• [Presentation] Diamond Surface Functionalization Via Carboxyl Termination for ATP 16 Detection (2015)
  • Author(s): E. Suaebah, T. Naramura, M. Myodo, M. Inaba, X. Wang, R. A. Rahim, H. Kawarada
  • Organizer: 9th International Conference on New Diamond and Nano Carbons
  • Place of Presentation: Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] High power diamond MOSFETs with >1600V breakdown and >100mA/mm current density (2015)
  • Author(s): H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, Y. Kitabayashi, A. Hiraiwa
  • Organizer: 9th International Conference on New Diamond and Nano Carbons
  • Place of Presentation: Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] Isotope analysis of diamond-surface passivation effect of Al2O3 formed using a high-temperature H2O-oxidant ALD method (2015)
  • Author(s): A. Hiraiwa, T. Saito, D. Matsumuara, H. Kawarada
  • Organizer: 9th International Conference on New Diamond and Nano Carbons
  • Place of Presentation: Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] Lattice Strain Analysis of Superconducting Boron-Doped Diamond Film by X-ray Diffraction (2015)
  • Author(s): T. Kageura , M. Shibata , T. Yamaguchi , Y.Takano , H.Kawarada
  • Organizer: 9th International Conference on New Diamond and Nano Carbons
  • Place of Presentation: Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] Homoepitaxial diamond film growth for single color centers (2015)
  • Author(s): T. Teraji
  • Organizer: 9th International Conference on New Diamond & Nano Carbon –NDNC2015
  • Place of Presentation: Shizuoka, Japan
  • Year and Date: 2015-05-24
  • Int'l Joint Research
• [Presentation] (001)ダイヤモンド上MBE薄膜AlNのIn-Plane X線回析法による評価 (2015)
  • Author(s): 林 佑哉, 小野 和子, 袴田 知宏, 平岩 篤, 川原田 洋
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学 湘南キャンパス
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] ダイヤモンド上SiO2ゲート絶縁膜の形成と評価 (2015)
  • Author(s): 原 壮志、袴田 知宏、小野 和子、瀬下 裕志、林 佑哉、平岩 篤、川原田 洋
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学 湘南キャンパス
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] ダイヤモンド基板の表面制御によるアプタマーを用いたATP検出 (2015)
  • Author(s): 楢村 卓朗, エヴィ スアエバ, 明道 三穂, 小林 幹典, 稲葉 優文, 平岩 篤, 川原田 洋
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学 湘南キャンパス
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] 原子層堆積Al2O3-MOSキャパシタの高温電気的絶縁性 に対するゲート電極材質の影響 (2015)
  • Author(s): 松村 大輔，齊藤 達也，平岩 篤, 川原田 洋
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学 湘南キャンパス
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] High purity homoepitaxial diamond growth by chemical vapor deposition of high-performance electronic devices (2015)
  • Author(s): T. Teraji
  • Organizer: Workshop –SBDD XX
  • Place of Presentation: Hasselt, Belgium
  • Year and Date: 2015-02-25 – 2015-02-27
  • Invited
• [Presentation] Influence of oxygen interlayer on the idelity of diamond Schottky diodes (2015)
  • Author(s): A. Fiori, T. Teraji, J. Pinero, D. Araujo, Y. Koide
  • Organizer: Workshop –SBDD XX
  • Place of Presentation: Hasselt, Belgium
  • Year and Date: 2015-02-25 – 2015-02-27
• [Presentation] Optically Detected Particle Track in High Purity Diamond (2014)
  • Author(s): S. Onoda, M. Haruyama, W. Kada, O. Hanaizumi, T. Ohshima
  • Organizer: The 2014 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
  • Place of Presentation: Parth, Australia
  • Year and Date: 2014-12-14 – 2014-12-17
• [Presentation] Electric Property of SiO2/Diamond Structure (2014)
  • Author(s): Y. Seshimo, T. Hara, Y. Hayashi, T. Hakamata, W. Ono, A.Hiraiwa, H. Kawarada
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2014-11-30 – 2014-12-05
• [Presentation] Analysis of Superconducting Boron-Doped Diamond Thin Film Using X-Ray Diffraction (2014)
  • Author(s): T. Kageura, M. Shibata, T. Yamaguchi, Y. Takano, H. Kawarada
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2014-11-30 – 2014-12-05
• [Presentation] Fabrication of Diamond Rods for Power Device Application (2014)
  • Author(s): M. Kobayashi, M. Inaba, M.Syamsul.N.S.B., A. Hiraiwa, H. Kawarada
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2014-11-30 – 2014-12-05
• [Presentation] Stability and Formation of Surface Hole Accumulation at C-H Diamond Surface" (2014)
  • Author(s): H. Kawarada, A. Hiraiwa
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2014-11-30 – 2014-12-05
  • Invited
• [Presentation] Isotopically-Engineered High Purity Diamond Film Growth (2014)
  • Author(s): T. Teraji
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: Boston, USA
  • Year and Date: 2014-11-30 – 2014-12-05
• [Presentation] イオンビームや電子線を活用したNVセンターの形成技術 (2014)
  • Author(s): 小野田忍
  • Organizer: 第57回 自動制御連合講演会
  • Place of Presentation: 群馬県渋川市、伊香保
  • Year and Date: 2014-11-10 – 2014-11-12
• [Presentation] 原子層堆積（ALD）Al2O3膜の高温電気特性 (2014)
  • Author(s): 松村 大輔，齊藤 達也，平岩 篤，川原田 洋
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学(札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] MBE-SiO2 膜下のダイヤモンド表面の電気物性 (2014)
  • Author(s): 原 壮志，袴田知宏，小野和子，瀬下裕志，林 佑哉，平岩 篤，川原田洋
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学(札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] (111)ダイヤモンドの熱処理による表面伝導の回復 (2014)
  • Author(s): 林 佑哉，原 壮志，瀬下 裕志,袴田 知宏,小野 和子,平岩 篤, 川原田 洋
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学(札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] ダイヤモンド基板上でのATP検出 (2014)
  • Author(s): 楢村 卓朗, 明道 三穂, 稲葉 優文, 石山 雄一郎, ルスリンダ アブドル ラヒム, 平岩 篤, 川原田 洋
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学(札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] X 線回折法を用いたボロンドープ超伝導ダイヤモンド薄膜の物性評価 (2014)
  • Author(s): 柴田 将暢, 蔭浦 泰資, 古閑 三靖, 山口 尚秀, 高野 義彦, 川原田 洋
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学(札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Fluorine-terminated thin boron-doped diamond Solution Gate FET (2014)
  • Author(s): M. Kobayashi,Y. Shintani, M. Myodo, H. Kawarada
  • Organizer: The 15th IUMRS-ICA
  • Place of Presentation: Fukuoka,Japan
  • Year and Date: 2014-08-24 – 2014-08-30
• [Presentation] Superconductivity of Heavily Boron-doped Diamond (111) by Spherical-resonator-Micro-wave-Plasma CVD (2014)
  • Author(s): T. Kageura, M. Koga, T. Yamaguchi, Y. Takano, H. Kawarada
  • Organizer: The 15th IUMRS-ICA
  • Place of Presentation: Fukuoka,Japan
  • Year and Date: 2014-08-24 – 2014-08-30
• [Book] "High voltage p-channel MOSFETs using two-dimensional hole gas" in Power Electronics Device Applications of Diamond Semiconductors (2018)
  • Author(s): Hiroshi Kawarada,他33人（Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki編）
  • Total Pages: 13
  • Publisher: Woodhead Publishing
  • ISBN: 9780081021835
• [Book] “Chemical Vapor Deposition of Homoepitaxial Diamond Films” in Power Electronics Device Applications of Diamond Semiconductors (2018)
  • Author(s): Tokuyuki Teraji, 他33人（Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki編）
  • Total Pages: 13
  • Publisher: Woodhead Publishing
  • ISBN: 9780081021835
• [Book] “Characterization methods of defects in single crystalline diamond for power device application” in Power Electronics Device Applications of Diamond Semiconductors (2018)
  • Author(s): Yukako Kato and Tokuyuki Teraji, 他32人（Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki編）
  • Total Pages: 21
  • Publisher: Woodhead Publishing
  • ISBN: 9780081021835
• [Remarks] 早稲田大学川原田研究室
  • URL: http://www.kawarada-lab.com/
• [Remarks] 早稲田大学川原田研究室
  • URL: http://www.kawarada-lab.com
• [Remarks] 早稲田大学 川原田研究室Web Site
  • URL: http://www.kawarada-lab.com/index.html
• [Remarks] 早稲田大学 川原田研究室Ｗｅｂ Ｓｉｔｅ
  • URL: http://www.kawarada-lab.com/index.html
• [Patent(Industrial Property Rights)] ダイヤモンド電界効果トランジスタ及びその製造方法 (2018)
  • Inventor(s): 川原田洋、矢部太一
  • Industrial Property Rights Holder: 川原田洋、矢部太一
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2018-161761
  • Filing Date: 2018
• [Patent(Industrial Property Rights)] ダイヤモンド半導体基板の製造方法 (2018)
  • Inventor(s): 川原田洋、平岩篤、蔭浦泰資
  • Industrial Property Rights Holder: 川原田洋、平岩篤、蔭浦泰資
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2018-215652
  • Filing Date: 2018
• [Patent(Industrial Property Rights)] ダイヤモンド単結晶およびその製造方法 (2018)
  • Inventor(s): 小野田忍、春山盛善、大島武、千葉敦也、平野貴美、五十嵐龍治
  • Industrial Property Rights Holder: 小野田忍、春山盛善、大島武、千葉敦也、平野貴美、五十嵐龍治
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2018-155987
  • Filing Date: 2018