| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2016: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Outline of Final Research Achievements |
The carrier injection and trapping phenomena in silicon carbonitride（SiCN) films were studied for the charge trapping nonvolatile memory applications. First, it was found that the erasing speed of the SiCN memory was one order of magnitude higher than that of the memory with a silicon nitride charge trapping film. The low energy barrier for hole injection in the SiCN memory was suggested to be responsible for the high erasing speed. Next, the energy depth of electrons trapped in the SiCN film was obtained to be comparable with that in the silicon nitiride film. Additionally, the conduction band offset at the SiCN-SiO2 interface was larger than that at the silicon nitride-SiO2 interface. These two characteristics would provide a low tunneling probability of electrons from trap states to silicon in the SiCN memory and would be responsible for the better electron retention characteristics at low temperatures obtained in the SiCN memory.
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